TOSHIBA TLOE27C

TL(RE,RME,SE,OE,YE,GE)27C(F)
.
TOSHIBA InGaAℓP LED
TLRE27C(F),TLRME27C(F),TLSE27C(F),
TLOE27C(F),TLYE27C(F),TLGE27C(F)
Panel Circuit Indicator
Unit in mm
•
Lead(Pb)-free products (lead: Sn-Ag-Cu)
•
Elliptical lens: Colored transparent lens
•
InGaAℓP technology
•
All plastic mold type
•
High intensity light emission
•
Excellent low current light output
•
Applications: Outdoor message signboards, full color panel, backlight
Lineup
Product
Name
Color
TLRE27C(F)
Red
TLRME27C(F)
Red
TLSE27C(F)
Red
TLOE27C(F)
Orange
TLYE27C(F)
Yellow
TLGE27C(F)
Green
Material
InGaAℓP
JEDEC
JEITA
TOSHIBA
―
―
4-5AP1
Weight: 0.3g(Typ.)
Absolute Maximum Ratings (Ta = 25°C)
Product
Name
Forward
Current
IF (mA)
Reverse
Voltage
VR (V)
Power
Dissipation
PD (mW)
Operating
Temperature
Topr (°C)
Storage
Temperature
Tstg (°C)
TLRE27C(F)
50
4
120
−40~100
−40~120
TLRME27C(F)
50
4
120
−40~100
−40~120
TLSE27C(F)
50
4
120
−40~100
−40~120
TLOE27C(F)
50
4
120
−40~100
−40~120
TLYE27C(F)
50
4
120
−40~100
−40~120
TLGE27C(F)
50
4
120
−40~100
−40~120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
Electrical and Optical Characteristics (Ta = 25°C)
λd
λp
Δλ
IF
Min
Luminous
Intensity
IV
Typ.
630
(644)
20
20
85
300
Typ. Emission
Wavelength
Product
Name
TLRE27C(F)
IF
20
Typ.
Forward
Voltage
VF
Max
IF
1.9
2.4
20
Reverse
Current
IR
Max
VR
50
TLRME27C(F)
626
(636)
23
20
153
400
20
1.9
2.4
20
50
4
TLSE27C(F)
613
(623)
20
20
272
750
20
1.9
2.4
20
50
4
TLOE27C(F)
605
(612)
20
20
272
800
20
2.0
2.4
20
50
4
TLYE27C(F)
587
(590)
17
20
272
650
20
2.0
2.4
20
50
4
TLGE27C(F)
571
(574)
17
20
85
250
20
2.0
2.4
20
50
4
mA
μA
V
Unit
nm
mA
mcd
mA
V
Precautions
•
4
Please be careful of the following:
Soldering temperature: 260°C max, soldering time: 3 s max
(Soldering portion of lead: below the lead stopper of the device)
•
If the lead is formed, the lead should be formed up to below the lead stopper of the device without forming stress
to the resin. Soldering should be performed after lead forming.
•
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
TLRE27C(F)
IF – V F
100
IV – IF
3000
Ta = 25 °C
Luminous intensity IV (mcd)
Forward current IF
(mA)
50
30
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
2.3
Ta = 25 °C
1
10
Forward current IF
(V)
(mA)
Relative Luminous Intensity Wavelength
IV – Tc
1.0
10
IF = 20mA
Ta = 25 °C
Relative luminous intensity
5
3
1
0.5
0.3
−20
0
20
40
60
0.8
0.6
0.4
0.2
0
580
0.1
80
600
620
640
660
680
700
Wavelength λ (nm)
Case temperature Tc (°C)
IF – Ta
Radiation Pattern
80
Ta = 25 °C
V
H
20°
10°
0° 10°
20°
30°
30°
H
V
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
IF (mA)
Relative luminous intensity IV
100
60
40
20
80°
0
0.2
0.4
0.6
0.8
0
0
90°
1.0
20
40
60
80
100
120
Ambient temperature Ta (°C)
3
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
TLRME27C(F)
IF – V F
100
IV – IF
10000
Ta = 25 °C
Luminous intensity IV (mcd)
Forward current IF
(mA)
50
30
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
2.3
Ta = 25 °C
1
10
Forward current IF
(V)
(mA)
Relative Luminous Intensity Wavelength
IV – Tc
1.0
10
IF = 20mA
Ta = 25 °C
Relative luminous intensity
5
3
1
0.5
0.3
−20
0
20
40
60
0.8
0.6
0.4
0.2
0
580
0.1
80
600
620
640
660
680
700
Wavelength λ (nm)
Case temperature Tc (°C)
IF – Ta
Radiation Pattern
80
Ta = 25 °C
V
H
20°
10°
0° 10°
20°
30°
30°
H
V
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
IF (mA)
Relative luminous intensity IV
100
60
40
20
80°
0
0.2
0.4
0.6
0.8
0
0
90°
1.0
20
40
60
80
100
120
Ambient temperature Ta (°C)
4
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
TLSE27C(F)
IF – V F
100
IV – IF
10000
Ta = 25 °C
Luminous intensity IV (mcd)
Forward current IF
(mA)
50
30
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
2.3
Ta = 25 °C
1
10
Forward current IF
(V)
(mA)
Relative Luminous Intensity Wavelength
IV – Tc
1.0
3
IF = 20mA
Relative luminous intensity
Ta = 25 °C
1
0.5
0.3
−20
0
20
40
60
0.8
0.6
0.4
0.2
0
560
0.1
80
580
600
620
640
660
680
Wavelength λ (nm)
Case temperature Tc (°C)
IF – Ta
Radiation Pattern
80
Ta = 25 °C
V
H
20°
10°
0° 10°
20°
30°
30°
H
V
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
IF (mA)
Relative luminous intensity IV
100
60
40
20
80°
0
0.2
0.4
0.6
0.8
0
0
90°
1.0
20
40
60
80
100
120
Ambient temperature Ta (°C)
5
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
TLOE27C(F)
IF – V F
100
IV – IF
10000
Ta = 25 °C
Luminous intensity IV (mcd)
Forward current IF
(mA)
50
30
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
2.3
Ta = 25 °C
1
10
Forward current IF
(V)
(mA)
Relative Luminous Intensity Wavelength
IV – Tc
3
1.0
IF = 20mA
Relative luminous intensity
Ta = 25 °C
1
0.5
0.3
0.1
−20
0
20
40
60
0.8
0.6
0.4
0.2
0
540
80
560
Case temperature Tc (°C)
580
600
620
640
660
Wavelength λ (nm)
IF – Ta
Radiation Pattern
80
Ta = 25 °C
V
H
20°
10°
0° 10°
20°
30°
30°
H
V
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
IF (mA)
Relative luminous intensity IV
100
60
40
20
80°
0
0.2
0.4
0.6
0.8
0
0
90°
1.0
20
40
60
80
100
120
Ambient temperature Ta (°C)
6
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
TLYE27C(F)
IF – V F
100
IV – IF
10000
Ta = 25 °C
Luminous intensity IV (mcd)
Forward current IF
(mA)
50
30
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
2.3
Ta = 25 °C
1
Forward current IF
(V)
100
(mA)
Relative Luminous Intensity Wavelength
IV – Tc
3
1.0
IF = 20mA
Relative luminous intensity
Ta = 25 °C
1
0.5
0.3
0.1
−20
0
20
40
60
0.8
0.6
0.4
0.2
0
540
80
560
Case temperature Tc (°C)
580
600
620
640
660
Wavelength λ (nm)
IF – Ta
Radiation Pattern
80
Ta = 25 °C
V
H
20°
10°
0° 10°
20°
30°
30°
H
V
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
IF (mA)
Relative luminous intensity IV
10
60
40
20
80°
0
0.2
0.4
0.6
0.8
0
0
90°
1.0
20
40
60
80
100
120
Ambient temperature Ta (°C)
7
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
TLGE27C(F)
IF – V F
100
IV – IF
3000
Ta = 25 °C
Luminous intensity IV (mcd)
Forward current IF
(mA)
50
30
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
2.3
Ta = 25 °C
1
Forward current IF
(V)
100
(mA)
Relative Luminous Intensity Wavelength
IV – Tc
1.0
10
IF = 20mA
Ta = 25 °C
Relative luminous intensity
5
3
1
0.5
0.3
−20
0
20
40
60
0.8
0.6
0.4
0.2
0
520
0.1
80
540
560
580
600
620
640
Wavelength λ (nm)
Case temperature Tc (°C)
IF – Ta
Radiation Pattern
80
Ta = 25 °C
V
H
20°
10°
0° 10°
20°
30°
30°
H
V
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
IF (mA)
Relative luminous intensity IV
10
60
40
20
80°
0
0.2
0.4
0.6
0.8
0
0
90°
1.0
20
40
60
80
100
120
Ambient temperature Ta (°C)
8
2007-10-01
TL(RE,RME,SE,OE,YE,GE)27C(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
9
2007-10-01