TOSHIBA TLRE62TF

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
TOSHIBA InGaAℓP LED
TLRE62T(F),TLRME62T(F),TLSE62T(F),TLOE62T(F),TLYE62T(F),
TLPYE62T(F),TLGE62T(F),TLFGE62T(F),TLPGE62T(F)
Panel Circuit Indicators
Unit: mm
•
Lead(Pb)-free products (lead: Sn-Ag-Cu)
•
3mm package
•
InGaAℓP technology
•
All plastic mold type
•
Transparent lens
•
Lineup: 6 colors (red, orange, yellow, pure yellow, green and pure
green)
•
High intensity light emission
•
Excellent low current light output
•
Applications: message boards, security devices and dashboard
displays
Lineup
Product Name
Color
TLRE62T(F)
Red
TLRME62T(F)
Red
TLSE62T(F)
Red
TLOE62T(F)
Orange
TLYE62T(F)
Yellow
TLPYE62T(F)
Pure Yellow
TLGE62T(F)
Green
TLFGE62T(F)
Green
TLPGE62T(F)
Pure Green
Material
JEDEC
―
JEITA
―
TOSHIBA
4-3H1
Weight: 0.14 g(Typ.)
InGaAlP
1
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
Absolute Maximum Ratings (Ta = 25°C)
Forward Current
IF (mA)
Reverse Voltage
VR (V)
Power Dissipation
PD (mW)
TLRE62T(F)
50
4
120
TLRME62T(F)
50
4
120
TLSE62T(F)
50
4
120
TLOE62T(F)
50
4
120
TLYE62T(F)
50
4
120
TLPYE62T(F)
50
4
120
TLGE62T(F)
50
4
120
TLFGE62T(F)
50
4
120
TLPGE62T(F)
50
4
120
Product Name
Operating
Temperature
Topr (°C)
Storage
Temperature
Tstg (°C)
−40~100
−40~120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical and Optical Characteristics (Ta = 25°C)
Product Name
Typ. Emission Wavelength
Luminous Intensity
IV
Forward Voltage
VF
Reverse Current
IR
λd
λP
Δλ
IF
Min
Typ.
IF
Typ.
Max
IF
Max
VR
TLRE62T(F)
630
(644)
20
20
47.6
120
20
1.9
2.4
20
50
4
TLRME62T(F)
626
(636)
23
20
47.6
180
20
1.9
2.4
20
50
4
TLSE62T(F)
613
(623)
20
20
85
200
20
1.9
2.4
20
50
4
TLOE62T(F)
605
(612)
20
20
153
350
20
2.0
2.4
20
50
4
TLYE62T(F)
587
(590)
17
20
85
250
20
2.0
2.4
20
50
4
TLPYE62T(F)
580
(583)
14
20
47.6
150
20
2.0
2.4
20
50
4
TLGE62T(F)
571
(574)
17
20
47.6
110
20
2.0
2.4
20
50
4
TLFGE62T(F)
565
(568)
15
20
27.2
70
20
2.0
2.4
20
50
4
TLPGE62T(F)
558
(562)
14
20
15.3
20
2.1
Unit
nm
mA
45
mcd
mA
2.4
V
20
50
4
mA
μA
V
Precautions
•
Please be careful of the following:
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
•
If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
•
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
TLRE62T(F)
IF – V F
IV – IF
100
1000
Ta = 25°C
IV (mcd)
30
Luminous intensity
Forward current
IF
(mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
100
10
1
1
2.3
10
(V)
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
3
1.0
Relative luminous intensity
Ta = 25°C
1
0.3
0.1
−20
0
20
Case temperature
Tc
0.8
0.6
0.4
0.2
0
580
80
60
40
600
(°C)
620
640
Wavelength
Radiation pattern
660
680
700
100
120
λ (nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
IF = 20 mA
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
3
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
TLRME62T(F)
IF – V F
100
Ta = 25°C
IV (mcd)
50
30
Luminous intensity
IF
(mA)
Ta = 25°C
Forward current
IV – IF
1000
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
100
10
1
1
2.3
10
(V)
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
10
1.0
Ta = 25°C
Relative luminous intensity
3
1
0.5
0.3
0.1
−20
0
20
60
40
Case temperature
Tc
0.8
0.6
0.4
0.2
0
580
80
600
(°C)
620
640
Wavelength
Radiation pattern
660
680
700
100
120
λ (nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
IF = 20 mA
5
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
4
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
TLSE62T(F)
IV – IF
IF – V F
100
1000
Ta = 25°C
IV (mcd)
30
Luminous intensity
Forward current
IF
(mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
100
10
1
1
2.3
10
(V)
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
3
1.0
Relative luminous intensity
Ta = 25°C
1
0.5
0.3
0.1
−20
0
20
Case temperature
Tc
0.8
0.6
0.4
0.2
0
560
80
60
40
580
(°C)
600
620
Wavelength
Radiation pattern
640
660
680
100
120
λ (nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
IF = 20 mA
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
5
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
TLOE62T(F)
IF – V F
IV – IF
100
1000
Ta = 25°C
IV (mcd)
30
Luminous intensity
Forward current
IF
(mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
100
10
1
1
2.3
10
(V)
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
3
1.0
Relative luminous intensity
Ta = 25°C
1
0.5
0.3
0.1
−20
0
20
Case temperature
Tc
0.8
0.6
0.4
0.2
0
540
80
60
40
560
(°C)
580
600
Wavelength
Radiation pattern
620
640
660
100
120
λ (nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
IF = 20 mA
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
6
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
TLYE62T(F)
IF – V F
IV – IF
100
1000
Ta = 25°C
IV (mcd)
30
Luminous intensity
Forward current
IF
(mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
100
10
1
1
2.3
10
(V)
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
3
1.0
Relative luminous intensity
Ta = 25°C
1
0.5
0.3
0.1
−20
0
20
Case temperature
Tc
0.8
0.6
0.4
0.2
0
540
80
60
40
560
(°C)
580
600
Wavelength
Radiation pattern
620
640
660
100
120
λ (nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
IF = 20 mA
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
7
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
TLPYE62T(F)
IF – V F
IV – IF
1000
100
Ta = 25°C
IV (mcd)
30
Luminous intensity
Forward current
IF
(mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
100
10
1
1
2.3
10
(V)
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
10
1.0
Ta = 25°C
Relative luminous intensity
5
3
1
0.5
0.3
0.1
−20
20
0
40
Case temperature
Tc
60
0.8
0.6
0.4
0.2
0
540
80
560
(°C)
580
600
Wavelength
Radiation pattern
620
640
660
100
120
λ (nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
IF = 20 mA
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
8
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
TLGE62T(F)
IF – V F
IV – IF
100
1000
Ta = 25°C
IV (mcd)
30
Luminous intensity
Forward current
IF
(mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
100
10
1
1
2.3
10
(V)
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
10
1.0
Ta = 25°C
Relative luminous intensity
3
1
0.5
0.3
0.1
−20
0
20
60
40
Case temperature
Tc
0.8
0.6
0.4
0.2
0
520
80
540
(°C)
560
580
Wavelength
Radiation pattern
600
620
640
100
120
λ (nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
IF = 20 mA
5
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
9
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
TLFGE62T(F)
IF – V F
IV – IF
100
1000
Ta = 25°C
IV (mcd)
30
Luminous intensity
Forward current
IF
(mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
100
10
1
1
2.3
10
(V)
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
10
1.0
Ta = 25°C
Relative luminous intensity
5
3
1
0.5
0.3
0.1
−20
20
0
40
Case temperature
Tc
60
0.8
0.6
0.4
0.2
0
520
80
540
(°C)
560
580
Wavelength
Radiation pattern
600
620
640
100
120
λ (nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
IF = 20 mA
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
10
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
TLPGE62T(F)
IF – V F
IV – IF
100
1000
Ta = 25°C
IV (mcd)
30
Luminous intensity
Forward current
IF
(mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
100
10
1
1
2.3
10
(V
100
Forward current
IV – Tc
IF
(mA)
Relative luminous intensity – Wavelength
10
1.0
Ta = 25°C
Relative luminous intensity
3
1
0.5
0.3
0.1
−20
0
20
60
40
Case temperature
Tc
0.8
0.6
0.4
0.2
0
520
80
540
(°C)
560
580
Wavelength
Radiation pattern
600
620
640
100
120
λ (nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
IF = 20 mA
5
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
11
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
12
2007-10-01