2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2.1±0.1 • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 25 ns (typ.) Characteristics +0.1 0.3 -0.05 3 2 0.7±0.05 Absolute Maximum Ratings (Ta = 25°C) 1 0.166±0.05 High DC current gain: hFE = 250 to 400 (IC = 0.3A) 0.65±0.05 1.7±0.1 2.0±0.1 • Unit: mm Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEX 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V UFM DC IC 3.0 Pulse ICP 5.0 A JEDEC ― IB 0.3 A JEITA ― PC (Note1) 800 PC (Note2) 500 Tj 150 °C Tstg −55 to 150 °C Collector current Base current Collector power dissipation Junction temperature Storage temperature range mW 1 :Gate 2 :Source 3 :Drain TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Note1: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Note2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) Note3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-03-07 2CS6134 Electrical Characteristics Characteristics (Ta = 25°C) Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO IC = 10 mA, IB = 0 30 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.3 A 250 ⎯ 400 hFE (2) VCE = 2 V, IC = 1.0 A 120 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1.0 A, IB = 33 mA ⎯ ⎯ 0.14 V Base-emitter saturation voltage VBE (sat) IC = 1.0 A, IB = 33 mA ⎯ ⎯ 1.10 V VCB = 10 V, IE = 0, f = 1 MHz ⎯ 18 ⎯ pF See Figure 1. ⎯ 40 ⎯ VCC ≈ 12 V, RL = 12 Ω ⎯ 320 ⎯ IB1 = −IB2 = 33 mA ⎯ 25 ⎯ Collector-emitter breakdown voltage DC current gain Collector output capacitance Switching time Cob Rise time tr Storage time tstg Fall time tf ns Marking VCC Part No. (or abbreviation code) IB1 Input IB1 RL 20 μs W Output Ｗ IB2 IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart 2 2010-03-07 2CS6134 IC – VCE 3.0 hFE – IC 1000 20 15 10 Ta = 100°C 2.5 hFE 2.0 6 DC current gain Collector current IC (A) 8 1.5 4 1.0 IB = 2 mA 0.5 0 0 0.8 1.2 1.6 2.0 −55°C 100 Common emitter Common emitter Ta = 25°C Single nonrepetitive pulse 0.4 25°C VCE = 2 V Single nonrepetitive pulse 10 0.001 0.01 2.4 Collector-emitter voltage VCE (V) Collector current IC VCE (sat) – IC 1 10 (A) VBE (sat) – IC 10 Common emitter IC/IB = 30 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 1 0.1 Single nonrepetitive pulse 0.1 −55°C Ta = 100°C Common emitter IC/IB = 30 Single nonrepetitive pulse Ta = −55°C 1 100°C 25°C 25°C 0.01 0.001 0.01 0.1 Collector current IC 0.1 0.001 10 1 (A) 0.01 0.1 Collector current IC 1 (A) 10 IC – VBE 3.0 Common emitter Collector current IC (A) VCE = 2 V 2.5 Single nonrepetitive pulse 2.0 1.5 Ta = 100°C −55°C 1.0 0.5 0 0 25°C 0.2 0.4 0.6 Base-emitter voltage 0.8 1.0 1.2 VBE (V) 3 2010-03-07 2CS6134 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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