SIDE-LOOK PACKAGE PIN PHOTODIODE MID-73A1C Description Package Dimensions Unit : mm (inches ) The MID-73A1C is a photodiode mounted in special dark plastic package and suitable for the IRED (940nm) Type. 3.05 (.120) 7.5±0.12 (..295 3.00+0.120 (.118±.005) SEE NOTE 2 5.2±0.12 (.205±.005) ANODE RADIANT SENSITIVE AREA 16.00 MIN. (.630) 0.50 TYP. (.020) Features l High photo sensitivity l Low junction capacitance l High cut-off frequency l Fast switching time 1.00MIN. (.039) 2.54 NOM. (.100) SEE NOTE 3 A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.0 mm (.040") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Maximum Rating Unit 100 mW o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-73A1C Optical-Electrical Characteristics Parameter Reverse Breakdown Voltage Reverse Dark Current Test Conditions IR=0.1mA Ee=0 VR=10V Ee=0 λ=940nm Open Circuit Voltage Ee=0.1mW/cm2 VR =10V λ=940nm RL=50Ω VR =5V , λ=940nm Rise Time Fall Time Light Current Ee=0.1mW/cm2 VR =3V , f=1MHZ Total Capacitance Ee=0 Symbol Min. V(BR)R 30 Typ. @ TA=25oC Unit Max. V ID 30 nA VOC 350 mV Tr Tf 50 50 nsec IL 9 µA CT 25 pF Typical Optical-Electrical Characteristic Curves 100 Capacitance C - pF Dark Current IR - pA 4000 3000 2000 1000 60 40 20 0 0 0 5 10 15 0.01 20 Reverse Volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TEMP=25oC , Ee=0 mW/cm2 0.1 1 10 100 Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE 2 F=1MHZ, Ee=0mW/cm 200 1000 Dark Current IR - nA Total Power Dissipation mW 80 150 100 50 0 100 10 1 0.1 0 20 40 60 80 100 o Ambient Temperature - C FIG.3 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE 0 20 40 60 80 100 Ambient Temperature - oC FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE 2 VR=10, Ee=0 mw/cm Unity Opto Technology Co., Ltd. 02/04/2002 MID-73A1C Typical Optical-Electrical Characteristic Curves 1000 Ip - µA Relative Spectral Sensitivity 100 80 Photocurrnet 60 40 20 0 700 800 900 1000 1100 1200 Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH 100 10 1 0.1 0.01 0.1 1 10 Irradiance Ee (mW/cm2) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 950 nm Relative Sensitivity 0° 10° 20° 30° 40° 1.0 0.9 50° 60° 70° 0.8 80° 90° 0.5 0.3 0.1 0.2 0.4 0.6 FIG.7 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002