T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-32H22 Package Dimensions The MID-32H22 is a NPN silicon phototransistor mou- Unit : mm (inches ) φ 3.55±0.25 (.140±.010) nted in a lensed , special dark plastic package. The lens- φ 3.10±0.20 (.122±.008) ing effect of the package allows an acceptance half view angle of 20° that is measured from the optical axis to 4.28±0.20 (.169±.008) the half power point . 5.28±0.30 (.208±.012) 3.85 (.152) 23.40MIN (.920) 0.50 TYP. (.020) Features l Wide range of collector current l Lensed for high sensitivity l Low cost plastic package l Good spectral matching IRED (λp 880/850 nm) type l Acceptance view angle : 40o 1.00MIN (.040) 2.54 (.100) C E Notes : 1. Tolerance is ± 0.25mm (.010") unless otherwise noted . 2. Protruded resin under flange is 1.5 mm (.059") max 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings o @ TA=25 C Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-32H22 Optical-Electrical Characteristics o Ee=0.1mW/cm2 VCC =5V, RL=1KΩ IC=1mA VCE=10V Ee=0 VCE=5V Ee=0.1mW/cm2 1000 100 10 1 0.1 0.01 0.001 0 40 80 120 TA - Ambient Temperature -oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 200 Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 160 120 80 40 0 0 2 4 6 8 10 RL - Load Resistance - KΩ FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% 0% V(BR)CEO 30 V V(BR)ECO 5 V 600 700 800 900 1000 Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH Typ. Max. VCE(SAT) 0.4 Tr Tf 15 15 100 IC(ON) 0.4 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Vce = 5 V µS ICEO nA mΑ V Ee = 0.1 mW/cm2 @λ= 940 nm -75 -25 25 75 125 TA - Ambient Temperature -oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE Relative Sensitivity Relative Spectral Sensitivity Tr Tf Rise and Fall Time - µS Iceo-Collector Dark Current -µA Typical Optical-Electrical Characteristic Curves Min. IC Normalized Collector Current Ee=0 Ie=0.1mA Ee=0 Ic=0.5mA Symbol Relative Collector Current (mA) Test Conditions Ic=0.1mA Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current @ TA=25 C Unit 10 Vce = 5 V 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Ee - Irradiance - mW/cm2 FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE 0° 10° 20° 30° 40° 1.0 0.9 50° 60° 70° 80 90° 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.6 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002