TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPC6012 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage VGSS ± 12 V DC (Note 1) ID 6 Pulse (Note 1) IDP 24 Drain power dissipation (t = 5 s) (Note 2a) PD 2.2 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W Single pulse avalanche energy (Note 3) EAS 2.3 mJ Avalanche current IAR 3 A Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current A JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 56.8 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 °C/W Note: (Note 1), (Note 2), (Note 3): See other pages. 6 5 4 1 2 3 This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-08-26 TPC6012 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ± 12 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯ Vth VDS = 10 V, ID = 200 μA 0.5 ⎯ 1.2 VGS = 2.5 V, ID = 3 A ⎯ 25 38 VGS = 4.5 V, ID = 3 A ⎯ 15 20 ⎯ 630 ⎯ ⎯ 150 ⎯ ⎯ 180 ⎯ ⎯ 5 ⎯ ⎯ 10 ⎯ ⎯ 10 ⎯ ⎯ 24 ⎯ ⎯ 9 ⎯ ⎯ 1.8 ⎯ ⎯ 3.4 ⎯ Gate threshold voltage Drain-source ON resistance RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-on time VDS = 10 V, VGS = 0 V, f = 1 MHz VGS ID = 3 A 5V 0V ton Switching time Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs 1 Gate-drain (“miller”) charge V V mΩ pF VOUT RL = 3.3 Ω Drain-source breakdown voltage ns VDD ≈ 10 V Duty ≤ 1%, tw = 10 μs VDD ≈ 16 V, VGS = 5 V, ID = 6 A Qgd nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 24 A ⎯ ⎯ −1.2 V VDSF IDR = 6 A, VGS = 0 V 2 2009-08-26 TPC6012 Marking (Note 5) Lot code (month) Part No. (or abbreviation code) Pin #1 Lot No. S2M Product-specific code Lot code (year) Note 5 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 × 25.4 × 0.8 (単位: mm) FR-4 25.4 × 25.4 × 0.8 (単位: mm) (a) (b) Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 3 A Note 4: • on lower left of the marking indicates Pin 1. Note 5: A dot marking for identifying the indication of product Labels. Without a dot: [[Pb]]/INCLUDES > MCV With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 3 2009-08-26 TPC6012 ID – VDS Drain current ID (A) 4 3 2.2 2 2.4 Common source Ta = 25°C Pulse test 4.5 6 3 1.9 2 1.8 1 0 0 10 2.8 15 2.2 10 2 5 0.2 0.4 0.6 0.8 VDS 0 0 1 (V) 1 4 VDS 5 (V) 0.5 Common source Ta = 25°C Pulse test 0.4 VDS (V) Common source VDS = 10 V Pulse test 8 Drain-source voltage (A) 3 VDS – VGS 10 Drain current ID 2 Drain-source voltage ID – VGS 6 0 0 Common source Ta = 25°C Pulse test 6 VGS = 1.8 V VGS = 1.6 V 12 2 2.4 1.7 Drain-source voltage 4 2.6 4.5 (A) 10 ID – VDS 20 Drain current ID 5 25°C Ta = −55°C 100°C 1 2 Gate-source voltage 3 0.3 0.2 3A 0 0 4 VGS (V) ID = 6 A 0.1 1.5 A 2 4 Gate-source voltage 6 8 10 VGS (V) RDS (ON) – ID Drain-source on resistance RDS (ON) (mΩ) 1000 Common source Ta = 25°C Pulse test 100 VGS = 2.5 V 4.5 V 10 1 0.1 1 10 100 Drain current ID (A) 4 2009-08-26 TPC6012 RDS (ON) – Ta IDR – VDS 50 100 Drain reverse current IDR (A) 40 ID = 1.5 A, 3 A, 6 A 30 VGS = 2.5 V 20 ID = 1.5 A, 3 A, 6 A 10 VGS = 4.5 V 0 −80 −40 0 40 80 120 1 Common source Ta = 25°C Pulse test −0.2 −0.4 VDS −1 −1.2 (V) 2.0 Vth (V) 1000 Gate threshold voltage Ciss Coss Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 10 Drain-source voltage Common source VDS = 10 V ID = 200 μA Pulse test 1.6 1.2 0.8 0.4 0 −80 100 −40 0 40 80 120 Ambient temperature Ta (°C) VDS PD – Ta Dynamic input/output characteristics 20 2.5 (1) t = 5 s (V) (1) Device mounted on a glass-epoxy board (a) (Note 2a) 2 Drain-source voltage 1 (2) t = 5 s 0.5 40 80 120 16 10 VDD = 16 V VDS (2) Device mounted on a glass-epoxy board (b) (Note 2b) 1.5 160 Ambient temperature Ta (°C) 4 VDS 12 6 8 VDD = 16 V 8 8 4 0 0 160 8 VGS 4 4 8 Common source ID = 6 A Ta = 25°C Pulse test 12 4 2 VGS (V) (pF) Capacitance C −0.8 Vth – Ta Capacitance – VDS Drain power dissipation PD (W) −0.6 Drain-source voltage 10000 0 0 1 VGS = 0 V Ambient temperature Ta (°C) 10 0.1 2.5 10 0.1 0 160 4.5 10 Gate-source voltage Drain-source on resistance RDS (ON) (mΩ) Common source Pulse test 0 16 Total gate charge Qg (nC) 5 2009-08-26 TPC6012 rth − tw Transient thermal impedance rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) 100 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse tw (s) Safe operating area 100 Drain current ID (A) ID max (pulsed)* 1 ms* 10 10 ms* 1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature 0.1 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2009-08-26 TPC6012 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-08-26