TOSHIBA TLP831F

TLP831(F)
TOSHIBA PhotoInterrupter
Infrared LED + Phototransistor
TLP831(F)
Lead(Pb)-Free
Home Electronics Equipment Such As
VCRS And CD Players
OA Equipment Such As Copiers,
Printers, And Facsimiles
Automatic Servicing Equipment
Various Position Detection Sensor
The TLP831(F) photointerrupter consists of a high
radiant power GaAs infrared LED and a Si
phototransistor.
Housed in a short lead package, this device is ideal
for automatic mounting.
•
Printed wiring board direct mounting type
(with a locating pin)
•
Short lead type enabling automatic mounting
: Lead length 3.4 ± 0.3mm
•
Board thickness: 1.6mm or less
•
Gap: 4.2mm
•
Resolution: Slit width 0.5mm
TOSHIBA
−
Weight: 0.58 g (typ.)
•
High current transfer ratio: IC / IF = 5% (min)
•
High response speed: tr, tf = 15μs (typ.)
•
Detector side is of visible light cut type.
•
Material of the package
: Polybutylene terephthalate (UL94V−0, black color)
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2007-10-01
TLP831(F)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
50
mA
ΔIF / °C
−0.33
mA / °C
VR
5
V
Collector−emitter voltage
VCEO
35
V
Emitter−collector voltage
VECO
5
V
Collector power dissipation
PC
75
mW
Collector power dissipation
derating (Ta > 25°C)
ΔPC / °C
−1
mW / °C
IC
50
mA
Operating temperature
Topr
−30~85
°C
Storage temperature
Tstg
−40~100
°C
Soldering temperature (5 s) (Note 1)
Tsol
260
°C
LED
Forward current
Forward current derating
(Ta > 25°C)
Detector
Reverse voltage
Collector current
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: At the location of 1.5mm from the resin package bottom
Product Indication
Monthly production lot
Production month
(JAN.-DEC. are indicated by alphabets of A-L)
Production Year (last digit of A.D. is indicated)
Operating Ranges
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
―
5
24
V
Forward current
IF
―
―
25
mA
Topr
−10
―
75
°C
Operating temperature
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2007-10-01
TLP831(F)
Opto Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Min.
Typ.
Max.
Unit
1.00
1.15
1.30
V
Forward voltage
VF
IF = 10mA
Reverse current
IR
VR = 5V
―
―
10
μA
Peak emission wavelength
λP
IF = 10mA
―
940
―
nm
VCE = 24V, IF = 0
―
―
0.1
μA
―
870
―
nm
VCE = 2V, IF = 10mA
5
―
100
%
IF = 20mA, IC = 0.5mA
―
0.1
0.35
V
VCC = 5V, IC = 1mA
RL = 1kΩ (Note 2)
―
15
50
―
15
50
Dark current
ID (ICEO)
Peak sensitivity
wavelength
λP
Current transfer ratio
Coupled
Test Condition
IC / IF
Collector−emitter
saturation voltage
VCE (sat)
Rise time
tr
Fall time
tf
μs
Note 2: Switching time measurement circuit and waveform
IF
IF
VCC
VOUT
90%
VOUT
RL
10%
td
tr
ts
tf
Precautions
•
When removing flux with chemicals after soldering, clean only the leads on the soldering side; do not dip the
whole package for cleaning.
Chemicals remaining on a surface of LED or phototransistor, if any, would have a bad influence to the optical
characteristics and it may severely lower the conversion efficiency.
•
The environment to install the device should be determined carefully. Oil or chemicals may cause the package
to be dissolved or cracked.
•
The device should be mounted on an unwrapped surface.
•
Install this device as avoiding the disturbance light as possible. A visible light cut−off type phototransistor
which blocks light with frequencies of 700nm or above is used. However, the device cannot block infrared light
with a wavelength of 700nm or more, and it may do mistaken movements.
•
Conversion efficiency falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in conversion efficiency over time.
The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1.
IC / IF (t) PO (t)
=
IC / IF (0) PO (0)
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2007-10-01
TLP831(F)
Outline: TOSHIBA
Unit: mm
Weight: 0.58 g (typ.)
Pin Connection
1
4
2
3
1.
2.
3.
4.
Anode
Cathode
Collector
Emitter
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2007-10-01
TLP831(F)
PC – Ta
80
60
60
Allowable collector power
dissipation PC (mW)
Allowable forward current
IF (mA)
IF – Ta
80
40
20
0
0
20
40
60
80
40
20
0
0
100
20
IF – VF
40
60
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
IC/IF – IF
(typ.)
100
50
Ta = 25 °C
Current transfer ratio
IC/IF (%)
(mA)
Forward current IF
VCE = 2 V
VCE = 0.4 V
50
30
10
5
Ta=75°C
3
50
30
Sample 2
10
Sample 1
5
25
3
0
−25
1
0.8
1
0.9
1.0
1.1
1.2
Forward voltage VF
1.3
3
5
Forward current IF
(V)
IC – IF
6
Ta = 25 °C
(mA)
Sample 2
Sample 1
1
0.5
0.3
3
5
10
Forward current IF
30
50
50
100
(mA)
(typ.)
Ta = 25 °C
20
5
VCE = 0.4 V
Collector current IC
(mA)
Collector current IC
VCE = 2 V
3
0.1
1
30
IC – VCE
10
5
10
1.4
4
3
10
2
(mA)
IF = 5 mA
1
0
0
100
15
2
4
6
Collector-emitter voltage
5
8
10
12
VCE (V)
2007-10-01
TLP831(F)
Relative IC – Ta
ID(ICEO) – Ta
(typ.)
Dark current ID(ICEO) (μA)
1.0
Relative collector current
(typ.)
5
1.2
0.8
VCE = 2 V
0.6
IF = 20 mA
IF = 10 mA
0.4
IF = 5 mA
0.2
−40
−20
0
20
40
60
80
100
1
10
VCE = 24V
5
10−1
10−2
Ambient temperature Ta (°C)
10
−3
10−4
0
20
40
60
80
120
100
Ambient temperature Ta (°C)
VCE(sat) – Ta
0.20
Collector-emitter saturation
voltage VCE(sat) (V)
0.16
(typ.)
IC = 0.5 mA
IF = 20 mA
0.12
0.08
0.04
0
−40
−20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Switching Characteristics
(Saturated Operation)
3000
Switching Characteristics
(non saturated operation)
(typ.)
tf
Ta = 25 °C
300
IF = 20 mA
Ta = 25 °C
tr, tf
VCC = 5 V
1000 V
CC = 5 V
500 VOUT ≥ 4.65 V
100
300
Switching time (μs)
Switching time (μs)
(typ.)
500
ts
100
50
tr
30
VOUT = 1 V
50
30
td
ts
10
5
3
10
5
3
1
1
td
3
5
10
30
50
100
0.5
300
0.3
0.1
Load resistance RL (kΩ)
0.3 0.5
1
3
5
10
30
50
Load resistance RL (kΩ)
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2007-10-01
TLP831(F)
Detecting Position
Characteristics(1)
Detecting Position
Characteristics (2)
(Typ.)
1.2
1.2
0
Relative collector current
Relative collector current
−
0.8
+
d
0.6
0.4
VCE = 2 V
1.0
VCE = 2 V
Ta = 25 °C
Shutter
0.2
0
−3
IF = 10 mA
IF = 10 mA
1.0
(Typ.)
Ta = 25 °C
Shutter
0.8
0.6
d
0.4
0.2
−2
−1
0
Distance
1
2
3
0
4
4
d (mm)
5
6
7
Distance
7
8
9
10
11
d (mm)
2007-10-01
TLP831(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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