TOSHIBA TLP127_07

TLP127
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP127
Programmable Controllers
DC−Output Module
Telecommunication
Unit in mm
The TOSHIBA mini flat coupler TLP127 is a small outline coupler,
suitable for surface mount assembly.
TLP127 consists of a gallium arsenide infrared emitting diode, optically
coupled to a darlington photo transistor with an integral base−emitter
resistor, and provides 300V VCEO.
•
Collector−emitter voltage: 300 V (min.)
•
Current transfer ratio: 1000% (min.)
•
Isolation voltage: 2500Vrms (min.)
•
UL recognized: UL1577, file no. E67349
•
BSI approved: BS EN60065:2002, certificate no.8927
BS EN60950-1:2002, certificate no.8928
TOSHIBA
Weight: 0.09 g
11−4C1
Pin Configurations (top view)
1
6
3
4
1 : ANODE
3 : CATHODE
4 : EMITTER
6 : COLLECTOR
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2007-10-01
TLP127
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
50
mA
ΔIF / °C
−0.7 (Ta ≥ 53°C)
mA / °C
Pulse forward current
IFP
1 (100μs pulse, 100pps)
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector−emitter voltage
VCEO
300
V
Emitter−collector voltage
VECO
0.3
V
Forward current
LED
Forward current derating
IC
150
mA
Collector power dissipation
PC
150
mW
Collector power dissipation
derating (Ta ≥ 25°C)
ΔPC / °C
−1.5
mW / °C
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−55~100
°C
Lead soldering temperature
Tsol
260 (10s)
°C
Total package power dissipation
PT
200
mW
Total package power dissipation
derating (Ta ≥ 25°C)
ΔPT / °C
−2.0
mW / °C
BVS
2500 (AC, 1min., R.H.≤ 60%)
Vrms
Detector
Collector current
Junction temperature
Isolation voltage
(Note 1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1, 3 shorted together and pins 4, 6 shorted together.
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2007-10-01
TLP127
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5V
―
―
10
μA
Capacitance
CT
V = 0, f = 1 MHz
―
30
―
pF
Collector−emitter
breakdown voltage
V(BR) CEO
IC = 0.1 mA
300
―
―
V
Emitter−collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
0.3
―
―
V
VCE = 200 V
―
10
200
nA
VCE = 200 V, Ta = 85°C
―
―
20
μA
V = 0, f = 1 MHz
―
12
―
pF
MIn.
Typ.
Max.
Unit
IF = 1mA, VCE = 1 V
1000
4000
―
%
IF = 10 mA, VCE = 1 V
500
―
―
%
IC = 10 mA, IF = 1 mA
―
―
1.0
IC = 100 mA, IF = 10 mA
0.3
―
1.2
Test Condition
Min.
Typ.
Max.
Unit
―
0.8
―
pF
―
Ω
Collector dark current
ICEO
Capacitance collector to
emitter
CCE
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Collector−emitter
saturation voltage
Symbol
IC / IF
IC / IF (sat)
VCE (sat)
Test Condition
V
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Capacitance
(input to output)
CS
VS = 0, f = 1 MHz
Isolation resistance
RS
VS = 500 V, R.H.≤ 60%
AC, 1 minute
Isolation voltage
BVS
5×10
10
10
14
2500
―
―
AC, 1 second, in oil
―
5000
―
DC, 1 minute, in oil
―
5000
―
3
Vrms
Vdc
2007-10-01
TLP127
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Rise time
tr
Fall time
tf
Turn−on time
Test Condition
VCC = 10 V, IC = 10 mA
RL = 100 Ω
ton
Min.
Typ.
Max.
―
40
―
―
15
―
―
50
―
Turn−off time
toff
―
15
―
Turn−on time
tON
―
5
―
―
40
―
―
80
―
RL = 180 Ω
VCC = 10 V, IF = 16 mA
Storage time
ts
Turn−off time
tOFF
(Fig.1)
Unit
μs
μs
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
―
―
200
V
Forward current
IF
―
16
25
mA
Collector current
IC
―
―
120
mA
Topr
−25
―
85
°C
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Fig. 1 Switching time test circuit
IF
RL
IF
VCC
ts
VCE
VCE
VCC
9V
1V
tON
4
tOFF
2007-10-01
TLP127
IF – Ta
PC – Ta
200
Allowable collector power
dissipation PC (mW)
Allowable forward current
IF (mA)
100
80
60
40
20
0
−20
0
40
20
60
100
80
Ambient temperature
Ta
160
120
80
40
0
−20
120
0
40
20
Ambient temperature
(°C)
Pulse width ≤ 100μs
IF
300
Forward current
Pulse forward current
500
100
50
30
10
3
10−3
10−2
3
10−1
3
Duty cycle ratio
30
10
5
3
1
0.5
0.3
100
3
DR
0.1
0.6
0.8
1.0
ΔVF / ΔTa – IF
1.2
1.4
VF
1.6
1.8
2.6
3.0
(V)
IFP – VFP
−3.2
(mA)
1000
−2.8
IFP
−2.4
−2.0
Pulse forward current
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
(°C)
Ta = 25°C
Forward voltage
−1.6
−1.2
−0.8
−0.4
0.1
Ta
120
50
Ta = 25°C
1000
100
80
IF – V F
100
(mA)
IFP (mA)
IFP – DR
3000
60
0.3 0.5
1
3
Forward current
5
10
30
500
300
100
50
30
10
IF (mA)
Repetitive
3
1
0.6
50
Pulse width ≤ 10μs
5
Frequency = 100Hz
Ta = 25°C
1.0
1.4
1.8
Pulse forward voltage
5
2.2
VFP
(V)
2007-10-01
TLP127
IC – VCE
Ta = 25°C
I C – IF
300
(mA)
Collector current
100
50
30
Sample A
120
IC
(mA)
4mA
IC
10mA
Collector current
160
2mA
80
1mA
40
Sample B
10
5
Ta = 25°C
3
VCE = 1.2V
IF = 0.5mA
0
0.4
0.8
1.6
1.2
Collector–emitter voltage
VCE = 1V
1
2.0
0.5
1
3
Forward current
VCE (V)
Switching Time – RL
30
IF
10000
Ta = 25°C
Ta = 25°C
Sample A
VCE = 1.2V
VCE = 1V
5000
300
IC / IF (%)
tOFF(IF = 16mA)
100
tOFF(IF = 1.6mA)
50
100
(mA)
VCC = 10V
500
50
IC / IF – IF
1000
30
Current transfer ratio
Switching time (μs)
10
5
tON(IF = 1.6mA)
10
5
3
3000
Sample B
1000
500
300
tON(IF = 16mA)
1
50
100
300 500
Load resistance
1k
3k
RL
5k
100
0.3
10k
0.5
1
3
Forward current
(kΩ)
6
10
5
IF
30
50
(mA)
2007-10-01
TLP127
IC – Ta
ICEO – Ta
1
120
0
10
VCE = 1V
100
IF = 10mA
80
60
40
1mA
20
0
-40
−1
-20
0
20
40
Ambient temperature
60
Ta
80
100
80
100
(℃)
VCE = 200V
150V
10
80V
−2
VCE(sat) – Ta
1.2
10
10
Collector-emitter saturation
voltage VCE(sat) (V)
Collector dark current
ICEO
(μA)
10
Collector current
IC
(mA)
10
−3
IF = 1mA
IC = 10mA
1.0
0.8
0.6
0.4
0.2
−4
0
20
40
60
Ambient temperature
80
Ta
0
-40
100
(℃)
-20
0
20
40
Ambient temperature
7
60
Ta
(℃)
2007-10-01
TLP127
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-10-01