TOSHIBA TLP628_07

TLP628,TLP628−2,TLP628−4
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP628,TLP628−2,TLP628−4
Programmable Controllers
DC−Output Module
Telecommunication
Unit in mm
The TOSHIBA TLP628, −2, and −4 consists of a gallium arsenide
infrared emitting diode optically coupled to a phototransistor which has
a 350V high voltage of collector−emitter breakdown voltage.
The TLP628−2 offers two isolated channels in a eight lead plastic
DIP package, while the TLP628−4 provide four isolated channels per
package.
TOSHIBA
•
Collector−emitter voltage: 350 V (min.)
•
Current transfer ratio: 50% (min.)
•
Isolation voltage: 5000Vrms (min.)
•
UL recognized: UL1577, file No. E67349
•
BSI approved: BS EN60065:2002, certificate no.7426
BS EN60950-1:2002, certificate no.7427
11−5B2
Weight: 0.26g
Pin Configurations (top view)
TLP628
TLP628-4
TLP628-2
1
4
1
8
1
16
2
3
2
7
2
15
3
6
3
14
4
5
4
13
5
12
6
11
7
10
8
9
1: Anode
2: Cathode
3: Emitter
4: Collector
1, 3: Anode
2, 4: Cathode
5, 7: Emitter
TOSHIBA
6, 8: Collector
1, 3, 5, 7: Anode
2, 4, 6, 8: Cathode
9, 11, 13, 15: Emitter
11−10C4
Weight: 0.54g
TOSHIBA
11−20A3
Weight: 1.1g
10, 12, 14, 16: Collector
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2007-10-01
TLP628,TLP628−2,TLP628−4
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic
Forward current
Detector
LED
Forward current derating
Symbol
TLP628
TLP628−2
TLP628−4
Unit
IF
60
50
mA
ΔIF / °C
−0.7 (Ta ≥ 39°C)
−0.5 (Ta ≥ 25°C)
mA / °C
Pulse forward current
IFP
1 (100μs pulse, 100pps)
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector−emitter voltage
VCEO
350
V
Emitter−collector voltage
VECO
7
V
Collector current
IC
50
mA
Collector power dissipation (1 circuit)
PC
150
100
mW
Collector power dissipation derating
(Ta ≥ 25°C, 1 circuit)
ΔPC / °C
−1.5
−1.0
mW / °C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−55~100
°C
Lead soldering temperature
Tsol
260 (10s)
°C
Total package power dissipation (1 circuit)
PT
200
150
mW
Total package power dissipation derating
(Ta ≥ 25°C, 1 circuit)
ΔPT / °C
−2.0
−1.5
mW / °C
Isolation voltage
5000 (AC, 1min., R.H. ≤ 60%)
(Note 1)
BVS
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
―
―
200
V
Forward current
IF
―
16
25
mA
Collector current
IC
―
―
10
mA
Topr
−25
―
85
°C
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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2007-10-01
TLP628,TLP628−2,TLP628−4
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
―
―
10
μA
Capacitance
CT
V = 0, f = 1 MHz
―
30
―
pF
Collector−emitter
breakdown voltage
V(BR) CEO
IC = 0.1 mA
350
―
―
V
Emitter−collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
―
―
V
VCE = 300 V
―
10
200
nA
VCE = 300 V, Ta = 85°C
―
―
50
μA
V = 0, f = 1 MHz
―
10
―
pF
Min.
Typ.
Max.
Unit
50
―
600
100
―
600
Collector dark current
ICEO
Capacitance collector to emitter
CCE
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Collector−emitter
saturation voltage
Symbol
Test Condition
IC / IF
IF = 5 mA, VCE = 5 V
Rank GB
IC / IF (sat)
IF = 1 mA, VCE = 0.4 V
Rank GB
―
60
―
30
―
―
IC = 2.4 mA, IF = 8 mA
―
―
0.4
IC = 0.2 mA, IF = 1 mA
Rank GB
―
0.2
―
―
―
0.4
Min.
Typ.
Max.
Unit
―
0.8
―
pF
―
Ω
VCE (sat)
%
%
V
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
CS
RS
Test Condition
VS = 0, f = 1 MHz
VS = 500 V R.H. ≤ 60%
AC, 1 minute
Isolation voltage
BVS
5×10
10
10
14
5000
―
―
AC, 1 second, in oil
―
10000
―
DC, 1 minute, in oil
―
10000
―
3
Vrms
Vdc
2007-10-01
TLP628,TLP628−2,TLP628−4
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Rise time
tr
Fall time
tf
Turn−on time
Test Condition
VCC = 10 V, IC = 2 mA
ARL = 100Ω
ton
Min.
Typ.
Max.
―
2
―
―
3
―
―
3
―
Turn−off time
toff
―
3
―
Turn−on time
tON
―
3
―
Storage time
ts
―
40
―
Turn−off time
tOFF
―
90
―
RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = 16 mA
Unit
μs
μs
Fig. 1 Switching time test circuit
IF
IF
VCC
tS
RL
4.5V
VCE
VCE
VCC
0.5V
tON
4
tOFF
2007-10-01
TLP628,TLP628−2,TLP628−4
PC– Ta
200
80
160
Allowable collector power
dissipation PC (mW)
Allowable forward current
IF (mA)
IF – Ta
100
TLP628.
60
TLP628-2,-4
40
20
0
-20
TLP628.
120
TLP628-2,-4
80
40
0
20
40
60
80
100
0
-20
120
0
20
Ambient temperature Ta (°C)
120
Ta = 25°C
50
Ta = 25°C
(mA)
30
1000
10
500
Forward current IF
Allowable pulse forward current
IFP (mA)
100
80
IF – V F
100
Pulse width ≤ 100μs
3000
60
Ambient temperature Ta (°C)
IFP – DR
5000
40
300
100
50
30
10
3
10-3
10-2
3
10-1
3
Duty cycle ratio
3
1
0.5
0.3
0.1
0.4
100
3
5
0.6
DR
0.8
1.0
1.2
Forward voltage VF
ΔVF/ΔTa – IF
1.4
1.6
2.0
2.4
(V)
IFP – VFP
1000
Pulse forward current IFP (mA)
Forward voltage temperature
coefficient ΔVF/ΔTa (mV/°C)
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.1
0.3 0.5
1
3
5
Forward current IF
10
30
Pulse width ≤ 100μs
500 Repetitive
300 Frequency = 100 Hz
Ta = 25°C
100
50
30
10
5
3
1
0
50
(mA)
0.4
0.8
1.2
Pulse forward voltage
5
1.6
VFP (V)
2007-10-01
TLP628,TLP628−2,TLP628−4
ID – Ta
Collector dark current ICEO (μA)
101
100
VCE = 300 V
200 V
10
-1
100 V
10-2
10
-3
0
20
40
60
80
100
Ambient temperature Ta (°C)
IC – VCE
Collector current IC
(mA)
80
Ta = 25°C
60
5
30
20
40
15
10
PC(MAX.)
20
IF = 5 mA
0
0
2
4
6
8
Collector-emitter voltage
VCE (V)
IC – IF
100
10
Ta = 25°C
50
30
VCE = 5 V
VCE = 0.4 V
5
50
3
Collector current IC
Sample B
1
0.5
0.3
0.1
Ta = 25°C
40
50
Sample A
30
(mA)
(mA)
Collector current IC
IC – VCE
10
20
25
10
5
0.05
0.03
0.3
1
3
10
Forward current IF
30
0
0
100
(mA)
IF = 2 mA
0.5
Collector-emitter voltage
6
1.0
1.5
VCE (V)
2007-10-01
TLP628,TLP628−2,TLP628−4
IC – Ta
VCE(sat)– Ta
0.20
30
IF = 5 mA
10
0.12
mA)
5
Collector current IC
Collector-emitter saturation
voltage VCE(sat) (V)
IC = 1 mA
0.16
0.08
0.04
0
-20
0
20
40
60
80
100
3
1
0.5
0.3
Ambient temperature Ta (°C)
VCE = 5 V
IF = 5 mA
0.1
-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
IC / IF – IF
Sample A
100
Sample B
10
Ta = 25°C
VCE = 5 V
VCE = 0.4 V
1
0.3
1
Forward current IF
10
100
(mA)
Switching Time – RL
1000
IF = 16 mA
500 VCC = 5 V
Ta = 25°C
300
tOFF
ts
100
Switching time (μs)
Current transfer ratio
IC/IF (%)
1000
50
30
10
5
3
1
1
tON
3
5
10
30
Load resistance RL
7
50
100
300
(kΩ)
2007-10-01
TLP628,TLP628−2,TLP628−4
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-10-01