30QWK2CZ47 TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type 30QWK2CZ47 Switching Type Power Supply Application Converter & Chopper Application • Repetitive peak reverse voltage: VRRM = 120 V • Peak Forward Voltage: VFM = 0.85 V (max) • Average output recified current: IO = 30 A • Low switching losses and output noise. Maximum Ratings Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 120 V Average output recified current IO 30 A IFSM 250 (50 Hz) A Tj −40~150 °C Tstg −40~150 °C 0.6 N･m Peak one cycle surge forward current (non-repetitive, sine wave) Junction temperature Storage temperature range Screw Torque Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage VFM IFM = 15 A 0.85 V Repetitive peak reverse current IRRM VRRM = Rated (120 V) 50 µA Cj VR = 10 V, f = 1.0 MHz 227 pF DC Total, Junction to case 2.5 °C/W Junction capacitance Thermal resistance Rth (j-c) Note: VFM, IRRM, Cj: A value of one cell. 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 2000-11-20 1/4 30QWK2CZ47 Polarity Marking ③ ※1 ① ② ※2 ※1 ※2 ※3 ※3 MARK 30QWK2C TYPE 30QWK2CZ47 None Lot Number Month (starting from alphabet A) Year (last number of the christian era) Handling Precaution Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to other rectifier products. This current leakage and not proper operating temperature or voltage may cause thermal run. Please take forward and reverse loss into consideration when you design. 2000-11-20 2/4 30QWK2CZ47 iF – vF PF (AV) – Io 100 32 Average forward power dissipation PF (AV) (W) Instantaneous forward current iF (A) One cell Tj = 150°C 10 100°C 75°C 25°C 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Instantaneous forward voltage 1.2 8 0° α 360° 4 (A) IFSM Rectangular waveform (one cell) 60° 90° 120° 180° 40 0° α 360° Conduction angle α 8 8 12 16 20 24 28 12 16 20 24 Average output rectified current 28 Io 32 Io 36 (A) Ta = 25°C Single phase full Sine wave f = 50 Hz One cell 160 120 80 40 0 1 36 3 (A) 5 10 30 50 100 Number of cycles rth (j-c) – t Cj – VR 10 (typical) 1000 f = 1 MHz One cell 500 One cell 300 Junction capacitance Cj 3 1 0.5 0.3 0.1 0.001 Ta = 25°C (pF) 5 Transient thermal impedance rth (j-c) (°C/W) 32 200 α = 30° Surge forward current Average forward power dissipation Tc max (°C) 240 120 4 4 Surge forward current (non-repetitive) 280 0 0 Conduction angle α Average output rectified current vF (V) 140 20 Rectangular waveform (one cell) α = 30° 12 320 60 60° 16 Tc max – Io 80 90° 20 160 100 120° 24 0 0 1.4 180° 28 0.01 0.1 1 Time t (s) 10 100 100 50 30 10 1 3 5 10 Reverse voltage 30 50 100 VR (V) 2000-11-20 3/4 30QWK2CZ47 IR – Tj (typical) PR (AV) – VR 100 Reverse current IR (mA) (one cell) 120 10 50 30 1 VR = 10 V 0.1 0.01 20 40 60 80 100 Junction temperature Tj 120 (°C) 140 160 Average reverse power dissipation PR (AV) (W) Pulse measurement 0.001 0 (typical) 3.2 100 2.8 Rectangular waveform 0° 360° 2.4 DC VR 2.0 1.6 Conduction angle α Tj = 150°C 240° 1.2 0.8 300° 180° 120° 60° 0.4 0 0 20 40 60 Reverse voltage 80 VR 100 120 (V) 2000-11-20 4/4