TOSHIBA 30QWK2C48

30QWK2C48
TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
30QWK2C48
Switching Type Power Supply Application
Converter & Chopper Application
•
Repetitive peak reverse voltage: VRRM = 120 V
•
Peak Forward Voltage: VFM = 0.85 V (max)
•
Average output rectified current: IO = 30 A
•
Low switching loses and output noise.
Maximum Ratings
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
120
V
Average output rectified current
IO
30
A
IFSM
250 (50 Hz)
A
Tj
−40~150
°C
Tstg
−40~150
°C
Peak one cycle surge forward current
(sine wave)
Junction temperature
Storage temperature range
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM
IFM = 15 A


0.85
V
Repetitive peak reverse current
IRRM
VRRM = Rated (120 V)


50
µA
Cj
VR = 10 V, f = 1.0 MHz

227

pF
DC Total


1.2
°C/W
Junction capacitance
Thermal resistance
Rth (j-c)
Note: VFM, IRRM, Cj: A value of one cell.
000707EAA1
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
• The information contained herein is subject to change without notice.
2000-11-20
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30QWK2C48
Polarity
Marking
③
①
②
※1
※1
※2
※2
MARK
30QWK2C
TYPE
30QWK2C48
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
Handling Precaution
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to other rectifier
products. This current leakage and not proper operating temperature or voltage may cause thermal run.
Please take forward and reverse loss into consideration when you design.
2000-11-20
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30QWK2C48
iF – vF
PF (AV) – Io
100
32
Average forward power dissipation
PF (AV) (W)
Instantaneous forward current iF
(A)
One cell
Tj = 150°C
10
100°C
75°C
25°C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
Instantaneous forward voltage
1.2
8
0° α 360°
4
(A)
IFSM
Rectangular
waveform
(one cell)
40
0° α 360°
0
0
Conduction
angle α
4
8
12
16
20
8
12
16
20
24
28
24
Average output rectified current
28
Io
32
Io
(A)
Ta = 25°C
Single phase full
f = 50 Hz
One cell
160
120
80
40
3
(A)
5
10
30
50
100
Number of cycles
rth (j-c) – t
Cj – VR
(typical)
1000
f = 1 MHz
One cell
500
Ta = 25°C
(pF)
5
3
One cell
300
Junction capacitance Cj
Transient thermal impedance
rth (j-c) (°C/W)
36
Sine wave
0
1
36
10
1
0.5
0.3
0.1
0.001
32
200
180°
90° 120°
Surge forward current
Average forward power dissipation
Tc max (°C)
240
120
20
4
Surge forward current (non-repetitive)
280
60
Conduction
angle α
Average output rectified current
vF (V)
140
80
Rectangular
waveform
(one cell)
α = 30°
12
320
60°
60°
16
Tc max – Io
α = 30°
90°
20
160
100
120°
24
0
0
1.4
180°
28
0.01
0.1
1
Time t (s)
10
100
1000
100
50
30
10
1
3
5
10
Reverse voltage
30
VR
50
100
(V)
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30QWK2C48
IR – Tj
(typical)
PR (AV) – VR
100
Pulse measurement
100
120
10
50
30
VR = 10 V
1
0.1
0.01
20
40
60
80
100
Junction temperature Tj
120
(°C)
140
160
Average reverse power dissipation
PR (AV) (W)
Reverse current
IR
(mA)
(one cell)
0.001
0
(typical)
3.2
2.8
Rectangular
waveform
0°
360°
2.4
DC
VR
2.0
1.6
Conduction
angle α
Tj = 150°C
240°
1.2
0.8
300°
180°
120°
60°
0.4
0
0
20
40
60
Reverse voltage
80
VR
100
120
(V)
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