TLP833(F) TOSHIBA Photointerrupter Infrared LED + Phototransistor TLP833(F) Lead(Pb)-Free Copiers, Printers, Fax Machines VCRS, Microwave Ovens, Air Conditioners Automatic Vending Machines Various Position Detection Sensors The TLP833(F) is a photointerrupter which incorporates a high radiant power GaAs LED and a fast−response Si phototransistor. The package has a deep gap. • Package with deep gap (gap: 12 mm) • Designed for direct mounting on printed circuit boards (positioning pins included). • Gap: 5mm • Resolution: Slit width 0.5mm • High current transfer ratio: IC/IF = 5% (min) • High temperature operation: Topr = 95°C (max) • Package material: Polybutylene terephthalate (UL94−V−0) • TOSHIBA Weight: 1g (typ.) Detector impermeable to visible light Absolute Maximum Ratings (Ta = 25°C) Characteristic LED Forward current Forward current 25°C < Ta ≦ 85°C derating Ta > 85°C Rating Unit IF 50 mA ΔIF/°C −0.33 −2 mA/°C VR 5 V Collector−emitter voltage VCEO 35 V Emitter−collector voltage VECO 5 V PC 75 mW ΔPC/°C −1 mW/°C IC 50 mA Operating temperature range Topr −30~85 °C Storage temperature range Tstg −40~100 °C Soldering temperature (5 s) Tsol 260 °C Detector Reverse voltage Symbol Collector power dissipation Collector power dissipation derating (Ta > 25°C) Collector current Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-10-01 TLP833(F) Markings Monthly lot number Month of manufacture (January to December denoted by letters A to L respectively) Year of manufacture (last digit of year of manufacture) Operating Ranges Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― ― 25 mA Topr −10 ― 75 °C Operating temperature Optical Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Min Typ. Max Unit 1.00 1.15 1.30 V Forward voltage VF IF = 10mA Reverse current IR VR = 5V ― ― 10 μA Peak emission wavelength λP IF = 10mA ― 940 ― nm VCE = 24V, IF = 0 ― ― 0.1 μA ― 870 ― nm VCE = 2V, IF = 10mA 5 ― 100 % IF = 20mA, IC = 0.5mA ― 0.1 0.35 V ― 15 ― ― 15 ― Dark current ID (ICEO) Peak sensitivity wavelength λP Current transfer ratio Coupled Test Condition ― IC/IF Collector−emitter saturation voltage VCE (sat) Rise time tr Fall time VCC = 5V, IC = 1mA RL = 1kΩ tf (Note) μs (Note): Switching time measurement circuit and waveform VCC IF VOUT RL IF 90% VOUT 10% td tf tr 2 ts 2007-10-01 TLP833(F) Precautions 1. Clean only the soldered part of the leads. Do not immerse the entire package in the cleaning solvent. 2. The package is made of polybutylene−terephthalate. Oil or chemicals may cause the package to melt or crack. Care must be taken in relation to the environment in which the device is to be installed. 3. Mount the device on a level surface. 4. Keep the device away from external light. Although the phototransistor is of low optical sensitivity, the device may malfunction if external light with a wavelength of 700 nm or more is allowed to impinge on it. 5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1 : 1. I C /I F (t) I C /I F (0) P (t) = O PO (0) 3 2007-10-01 TLP833(F) Package Dimensions Unit: mm Weight: 1 g (typ.) Pin Connection 3 1. 2. 3. 4. Anode Cathode Collector Emitter (C0.2) 2.3±0.1 2 (0.1) 4 B 1.34±0.04 4−(R0.1) 1.34±0.04 1 2.0±0.1 A Φ1.2±0.1 4 2007-10-01 TLP833(F) IF – Ta PC – Ta 80 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 80 60 40 20 0 0 20 40 80 60 60 40 20 0 0 100 20 Ambient temperature Ta (°C) Current transfer ratio IC / IF (%) (mA) Forward current IF VCE = 2 V 50 30 10 5 Ta=75°C VCE = 0.4 V 30 sample 2 10 sample 1 5 3 0 −25 1 0.9 1.0 1.1 1.2 Forward voltage VF 1.3 3 5 Forward current IF (V) Ta=25°C VCE = 2 V sample 1 1 0.5 0.3 (typ.) Ta = 25 °C 20 4 15 3 10 2 IF=5mA 1 5 100 (mA) sample 2 3 50 (mA) 5 VCE = 0.4 V 3 0.1 1 30 IC – VCE 6 Collector current IC Collector current IC (mA) 5 10 1.4 IC – IF 10 100 Ta=25°C 50 1 0.8 80 IC / IF – IF (typ.) 100 50 25 60 Ambient temperature Ta (°C) IF – V F 3 40 10 Forward current IF 30 50 0 0 100 (mA) 2 4 6 Collector-emitter voltage 5 8 10 12 VCE (V) 2007-10-01 TLP833(F) Relative IC – Ta (typ.) ID(ICEO) – Ta (typ.) 5 1.0 1 0.8 Dark current ID(ICEO) (μA) Relative collector current 1.2 VCE = 2 V 0.6 IF = 20 mA IF = 10 mA 0.4 IF = 5 mA 0.2 −40 −20 0 20 40 60 100 80 Ambient temperature Ta (°C) VCE = 24 V 10 10−1 5 10−2 10−3 10−4 0 20 40 60 80 100 120 Ambient temperature Ta (°C) VCE(sat) – Ta Collector-emitter saturation voltage VCE(sat) (V) 0.20 0.16 (typ.) IC = 0.5 mA IF = 20 mA Switching Time Test Circuit 0.12 VCC IF 0.08 RL 0.04 0 −40 VOUT IF 90% 10% VOUT td tr −20 0 20 40 60 80 tf ts 100 Ambient temperature Ta (°C) Switching Characteristics (non saturated operation) 500 300 Switching Characteristics (saturated operation) (typ.) 3000 Ta = 25 °C tr･tf VCC = 5 V tf IF = 20 mA 1000 V CC = 5 V VOUT = 1 V Switching time (μs) 100 Switching time (μs) Ta = 25 °C (typ.) 50 30 td ts 10 5 500 VOUT ≧ 4.65V ts 300 100 50 tr 30 3 10 1 0.5 0.3 0.1 5 3 1 0.3 0.5 1 3 5 10 30 50 td 3 5 10 30 50 100 300 500 Load resistance RL (kΩ) Load resistance RL (kΩ) 6 2007-10-01 TLP833(F) Detection Position Characteristics(1) Detection Position Characteristics (2) (typ.) 1.2 1.2 IF = 10mA VCE = 2V Ta = 25°C 0.8 − 0 d Shutter 0.6 + 0.4 Detection Position d=0±0.3mm 0.2 0 −3 IF=10mA VCE=2V Ta=25°C 1.0 Relative collector current Relative collector current 1.0 (typ.) Shutter 0.8 0.6 d 0.4 Detection Position 0.2 +1.5 d=12−1.1mm 0 −2 −1 0 Distance 1 2 3 10 4 d (mm) 11 12 13 Distance 14 15 16 d (mm) Relative Positioning Of Shutter And Device For normal operation position the shutter and the device as shown in the figure below. By considering the device's detection direction characteristic and switching time, determine the shutter slit width and pitch. Shutter A A′ Unit in mm 12 10.9max 13.5min Center of sensor Cross section between A and A′ 7 2007-10-01 RE ST RI CT IO NS O N PR O DU CT US E 2007 0701- TLP833(F) EN • Th e inf or ma tio n co nta ine d he rei n is su bje ct to ch an ge wit ho ut not ice . • TO SH IB A is co nti nu all y wo rki ng to im pr ov e the qu alit y 8 2007-10-01