TOSHIBA TLP921

TLP921
Toshiba Photoreflective sensor Infrared LED + Phototransistor
TLP921
Inkjet printer’s ink-level monitoring
TLP921 is a reflective photosensor combining a GaAs infrared LED with
a Si phototransistor.
·
Flush-mount package on PCB: Applied PCB thickness = 1.6 mm or
thinner
·
Positioning pin and single-sided screw-mount type
·
Short lead type: Lead length = 2.8 ± 0.3 mm
·
Phototransistor impermeable to visible light
·
Package material: polybutylene-terephthalate (UL94V-0, black)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
IF
50
mA
DIF/°C
-0.33
mA/°C
VR
5
V
Collector-Emitter voltage
VCEO
35
V
Emitter-Collector voltage
VECO
5
V
PC
75
mW
DPC/°C
-1
mW/°C
LED
Forward current
Forward current derating
(Ta > 25°C)
Detector
Reverse voltage
Collector power dissipation
Collector power dissipation
derating
(Ta > 25°C)
Collector current
IC
50
mA
Topr
-30~85
°C
Storage temperature
Tstg
-40~100
°C
Tsol
260
°C
(5 s) (Note 1)
―
JEITA
―
TOSHIBA
―
Weight: 0.35 g (typ.)
Operating temperature
Soldering temperature
JEDEC
Note 1: Soldering is performed 1.5 mm from the bottom of the package.
Marking
Monthly lot
number
Month of
manufacture
January to December
are denoted by letters
A to L respectively
Year of
manufacture
Last decimal digit of
the year of
manufacture
1
2002-04-03
TLP921
Electrical and Optical Characteristics (Ta = 25°C)
Coupled
Detector
LED
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 20 mA
¾
1.25
1.4
V
Reverse current
IR
VR = 5 V
¾
¾
10
mA
Peak emission wavelength
lP
IF = 20 mA
¾
940
¾
nm
Dark current
ID (ICEO)
VCE = 24 V, IF = 0
¾
¾
0.1
mA
¾
¾
870
¾
nm
(Note 2)
580
¾
2600
mA
(Note 3)
¾
¾
120
mA
V
Peak sensitivity wavelength
lP
Collector current
IC
VCE = 5 V, IF = 20 mA
Leakage current
ILEAK
VCE = 5 V, IF = 20 mA
Collector-Emitter saturation
voltage
VCE (sat)
IF = 20 mA, IC = 0.3 mA
¾
0.1
0.4
Rise time
tr
VCE = 2 V, IC = 0.5 mA
¾
38
90
Fall time
tf
RL = 1 kW, d = 8 mm
¾
48
110
(Note 4)
ms
Note 2: The following drawings show condition and the layout of reflectors.
Right angle prism (material: BK7)
Thickness:7 mm
7 mm
7 mm
8 mm
Sensor
Note 3: Measurement layout drawing for leakage current
Evaporated surface
of aluminum
1 mm
Evaporated
aluminum glass
8 mm
Sensor
Note 4: Measurement circuit and waveforms for Switching time
Prism
IF
IF
RL
VCC
90%
VOUT
VOUT
10%
tr
2
tf
2002-04-03
TLP921
Handling Precautions
·
·
·
·
·
When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not
immerse the entire package in the cleaning solvent. Chemical residue on the LED emitter or the
photodetector inside the phototransistor case may adversely affect the optical characteristics of the device
and may drastically reduce the collector current.
The case is made of polybutylene-terephthalate. Oil or chemicals may cause the package to melt or crack.
Care must be taken in relation to the environment in which the device is to be installed.
Mount the device on a level surface.
The collector current characteristic will deteriorate over time due to current flowing in the infrared LED.
The design of circuits which incorporate the device must take into account the change in collector current
over time.
When the 2-mm hole is used as screw fixation, please fastening torque 0.1 N or less.
3
2002-04-03
TLP921
Package Dimensions
Weight: 0.35g (typ.)
Pin connection
1
4
2
3
1:
2:
3:
4:
Anode
Cathode
Emitter
Collector
4
2002-04-03
TLP921
IF – Ta
PC – Ta
80
Allowable collector power dissipation
PC (mW)
Allowable forward current
IF
(mA)
80
60
40
20
0
0
20
40
60
80
60
40
20
0
0
100
20
Ambient temperature Ta (°C)
IF – VF
(typ.)
100
(mA)
1000
(typ.)
Ta = 25°C
VCE = 2 V
VCE = 5 V
IC
30
Collector current
(mA)
80
IC – IF
5000
50
Forward current IF
60
Ambient temperature Ta (°C)
100
10
5
Ta = 75°C
50
3
25
0
1
0.8
0.9
1.0
100
10
-25
1.1
1.2
Forward voltage
VF
1.3
1
0.1
1.4
0.3
1
(V)
3
10
Forward current
Relative IC – Ta
(typ.)
30
IF
100
1200
(typ.)
Ta = 25°C
20
(mA)
IC
Collector current
0.8
0.6
VCE = 5 V
IF = 20 mA
800
15
600
10
400
200
IF = 10 mA
0.2
-40
IF = 5mA
IF = 5 mA
-20
0
20
40
60
80
1000
(mA)
1000
1
0.4
300
IC – VCE
1.2
Relative collector current
40
0
0
100
Ambient temperature Ta (°C)
2
4
6
8
Collector-Emitter voltage VCE
5
10
12
(V)
2002-04-03
TLP921
VCE (sat) – Ta
(typ.)
ID (ICEO) – Ta
(mA)
0.16
0.12
0.08
0.04
0
-40
(typ.)
5
Dark current ID (ICEO)
Collector-Emitter saturation voltage
VCE (sat) (v)
0.2
IF = 20mA
IC = 0.3 mA
IC = 0.5 mA
-20
0
20
40
60
80
1
VCE = 24 V
10
10-1
10-2
10-3
10-4
0
100
5
Ambient temperature Ta (°C)
20
40
60
80
100
120
Ambient temperature Ta (°C)
Switching characteristics
(non saturated operation) (typ.)
Switching characteristics
(saturated operation)
(typ.)
3000
3000
1000
tf
1000
tr
tf
100
Switching time
(ms)
100
Switching time
(ms)
td
ts
10
10
tr
td
ts
1
1
0.5
1
1
Ta = 25°C
VCE = 2 V
VOUT = 0.5 V
10
0.5
1
100
Load resistance RL (kW)
Ta = 25°C
VCE = 5 V
VOUT >
= 4.6 V
10
100
Load resistance RL (kW)
6
2002-04-03
TLP921
Wavelength characteristic
Spectral response characteristic
(typ.)
(typ.)
1.0
100
IF = 20 mA
Ta = 25°C
Ta = 25°C
80
Relative sensitivity
Relative intensity
(%)
0.8
0.6
0.4
0.2
60
40
20
0
820
860
900
940
Wavelength l
980
0
0
1020
200
Detecting position characteristic I
< Relative IC – X direction > (typ.)
IF = 20 mA
Relative collector current
Prism
0.8
-l
+l
0.4
0.2
0.8
-2
-1
0
1
Prism moving distance
2
3
(nm)
Ta = 25°C
IF = 20 mA
VCE = 5 V
0.6
Prism
0.4
0.2
-3
1200
1
VCE = 5 V
d = 8 mm
Relative collector current
1
1000
1.2
Ta = 25°C
-4
800
Detecting position characteristic II
< Relative IC – Y direction > (typ.)
d = 8 mm
1.2
0
-5
600
Wavelength l
(nm)
0.6
400
4
0
-5
5
I (mm)
-4
-3
-2
-1
-l
+l
0
1
Prism moving distance
2
3
4
5
I (mm)
Detecting distance characteristic
< Relative IC – Z direction > (typ.)
Relative collector current
1
0.3
0.1
Ta = 25°C
IF = 20 mA
VCE = 5 V
Prism
0.03
d
0.01
0
2
4
6
8
10
12
14
Distance between device and prism
16
18
d
(mm)
20
7
2002-04-03
TLP921
RESTRICTIONS ON PRODUCT USE
000707EAC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
8
2002-04-03