TLP921 Toshiba Photoreflective sensor Infrared LED + Phototransistor TLP921 Inkjet printer’s ink-level monitoring TLP921 is a reflective photosensor combining a GaAs infrared LED with a Si phototransistor. · Flush-mount package on PCB: Applied PCB thickness = 1.6 mm or thinner · Positioning pin and single-sided screw-mount type · Short lead type: Lead length = 2.8 ± 0.3 mm · Phototransistor impermeable to visible light · Package material: polybutylene-terephthalate (UL94V-0, black) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA DIF/°C -0.33 mA/°C VR 5 V Collector-Emitter voltage VCEO 35 V Emitter-Collector voltage VECO 5 V PC 75 mW DPC/°C -1 mW/°C LED Forward current Forward current derating (Ta > 25°C) Detector Reverse voltage Collector power dissipation Collector power dissipation derating (Ta > 25°C) Collector current IC 50 mA Topr -30~85 °C Storage temperature Tstg -40~100 °C Tsol 260 °C (5 s) (Note 1) ― JEITA ― TOSHIBA ― Weight: 0.35 g (typ.) Operating temperature Soldering temperature JEDEC Note 1: Soldering is performed 1.5 mm from the bottom of the package. Marking Monthly lot number Month of manufacture January to December are denoted by letters A to L respectively Year of manufacture Last decimal digit of the year of manufacture 1 2002-04-03 TLP921 Electrical and Optical Characteristics (Ta = 25°C) Coupled Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 20 mA ¾ 1.25 1.4 V Reverse current IR VR = 5 V ¾ ¾ 10 mA Peak emission wavelength lP IF = 20 mA ¾ 940 ¾ nm Dark current ID (ICEO) VCE = 24 V, IF = 0 ¾ ¾ 0.1 mA ¾ ¾ 870 ¾ nm (Note 2) 580 ¾ 2600 mA (Note 3) ¾ ¾ 120 mA V Peak sensitivity wavelength lP Collector current IC VCE = 5 V, IF = 20 mA Leakage current ILEAK VCE = 5 V, IF = 20 mA Collector-Emitter saturation voltage VCE (sat) IF = 20 mA, IC = 0.3 mA ¾ 0.1 0.4 Rise time tr VCE = 2 V, IC = 0.5 mA ¾ 38 90 Fall time tf RL = 1 kW, d = 8 mm ¾ 48 110 (Note 4) ms Note 2: The following drawings show condition and the layout of reflectors. Right angle prism (material: BK7) Thickness:7 mm 7 mm 7 mm 8 mm Sensor Note 3: Measurement layout drawing for leakage current Evaporated surface of aluminum 1 mm Evaporated aluminum glass 8 mm Sensor Note 4: Measurement circuit and waveforms for Switching time Prism IF IF RL VCC 90% VOUT VOUT 10% tr 2 tf 2002-04-03 TLP921 Handling Precautions · · · · · When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not immerse the entire package in the cleaning solvent. Chemical residue on the LED emitter or the photodetector inside the phototransistor case may adversely affect the optical characteristics of the device and may drastically reduce the collector current. The case is made of polybutylene-terephthalate. Oil or chemicals may cause the package to melt or crack. Care must be taken in relation to the environment in which the device is to be installed. Mount the device on a level surface. The collector current characteristic will deteriorate over time due to current flowing in the infrared LED. The design of circuits which incorporate the device must take into account the change in collector current over time. When the 2-mm hole is used as screw fixation, please fastening torque 0.1 N or less. 3 2002-04-03 TLP921 Package Dimensions Weight: 0.35g (typ.) Pin connection 1 4 2 3 1: 2: 3: 4: Anode Cathode Emitter Collector 4 2002-04-03 TLP921 IF – Ta PC – Ta 80 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 80 60 40 20 0 0 20 40 60 80 60 40 20 0 0 100 20 Ambient temperature Ta (°C) IF – VF (typ.) 100 (mA) 1000 (typ.) Ta = 25°C VCE = 2 V VCE = 5 V IC 30 Collector current (mA) 80 IC – IF 5000 50 Forward current IF 60 Ambient temperature Ta (°C) 100 10 5 Ta = 75°C 50 3 25 0 1 0.8 0.9 1.0 100 10 -25 1.1 1.2 Forward voltage VF 1.3 1 0.1 1.4 0.3 1 (V) 3 10 Forward current Relative IC – Ta (typ.) 30 IF 100 1200 (typ.) Ta = 25°C 20 (mA) IC Collector current 0.8 0.6 VCE = 5 V IF = 20 mA 800 15 600 10 400 200 IF = 10 mA 0.2 -40 IF = 5mA IF = 5 mA -20 0 20 40 60 80 1000 (mA) 1000 1 0.4 300 IC – VCE 1.2 Relative collector current 40 0 0 100 Ambient temperature Ta (°C) 2 4 6 8 Collector-Emitter voltage VCE 5 10 12 (V) 2002-04-03 TLP921 VCE (sat) – Ta (typ.) ID (ICEO) – Ta (mA) 0.16 0.12 0.08 0.04 0 -40 (typ.) 5 Dark current ID (ICEO) Collector-Emitter saturation voltage VCE (sat) (v) 0.2 IF = 20mA IC = 0.3 mA IC = 0.5 mA -20 0 20 40 60 80 1 VCE = 24 V 10 10-1 10-2 10-3 10-4 0 100 5 Ambient temperature Ta (°C) 20 40 60 80 100 120 Ambient temperature Ta (°C) Switching characteristics (non saturated operation) (typ.) Switching characteristics (saturated operation) (typ.) 3000 3000 1000 tf 1000 tr tf 100 Switching time (ms) 100 Switching time (ms) td ts 10 10 tr td ts 1 1 0.5 1 1 Ta = 25°C VCE = 2 V VOUT = 0.5 V 10 0.5 1 100 Load resistance RL (kW) Ta = 25°C VCE = 5 V VOUT > = 4.6 V 10 100 Load resistance RL (kW) 6 2002-04-03 TLP921 Wavelength characteristic Spectral response characteristic (typ.) (typ.) 1.0 100 IF = 20 mA Ta = 25°C Ta = 25°C 80 Relative sensitivity Relative intensity (%) 0.8 0.6 0.4 0.2 60 40 20 0 820 860 900 940 Wavelength l 980 0 0 1020 200 Detecting position characteristic I < Relative IC – X direction > (typ.) IF = 20 mA Relative collector current Prism 0.8 -l +l 0.4 0.2 0.8 -2 -1 0 1 Prism moving distance 2 3 (nm) Ta = 25°C IF = 20 mA VCE = 5 V 0.6 Prism 0.4 0.2 -3 1200 1 VCE = 5 V d = 8 mm Relative collector current 1 1000 1.2 Ta = 25°C -4 800 Detecting position characteristic II < Relative IC – Y direction > (typ.) d = 8 mm 1.2 0 -5 600 Wavelength l (nm) 0.6 400 4 0 -5 5 I (mm) -4 -3 -2 -1 -l +l 0 1 Prism moving distance 2 3 4 5 I (mm) Detecting distance characteristic < Relative IC – Z direction > (typ.) Relative collector current 1 0.3 0.1 Ta = 25°C IF = 20 mA VCE = 5 V Prism 0.03 d 0.01 0 2 4 6 8 10 12 14 Distance between device and prism 16 18 d (mm) 20 7 2002-04-03 TLP921 RESTRICTIONS ON PRODUCT USE 000707EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 2002-04-03