TLP830(F) TOSHIBA Photointerrupter Infrared LED + Phototransistor TLP830(F) Lead(Pb)-Free Track "00" Sensor For Floppy Disk Drive Detection Of Sub−Scanning Quantity By Image Scanner Various Position Detection Sensor TLP830(F) is a photointerrupter which uses a high−radiant power GaAs LED and a fast−response Si phototransistor. The device is high resolution with a narrow slit pitch. • Small package: 7.4mm (H), 4.5mm (D) • Printed wiring board direct mounting type (with a locating pin). • Board thickness: 1mm or less • Short lead type enabling automated mounting • Gap: 2mm • High resolution: Slit width 0.15mm • High current transfer ratio: IC/IF = 3% (min) • Material of the package : Polybutylene terephthalate TOSHIBA (UL94V−0, black color) • 11−11C1 Weight: 0.4 g (typ.) Detector side is of visible light cut type. Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current LED Forward current derating Ta > 25°C Ta > 85°C Reverse voltage Detector Symbol Rating Unit IF 50 mA ΔIF / °C −0.33 −2 mA / °C VR 5 V Collector−emitter voltage VCEO 35 V Emitter−collector voltage VECO 5 V Collector power dissipation PC 75 mW Collector power dissipation derating (Ta > 25°C) ΔPC / °C −1 mW / °C mA IC 50 Operating temperature range Topr −30~85 °C Storage temperature range Tstg −40~100 °C Soldering temperature (5 s) Tsol 260 °C Collector current Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-10-01 TLP830(F) Product Indication Monthly production lot Production month (Jan.-Dec. are indicated by alphabetes of A-L) Production year (last digit of a.d. is indicated) Operating Ranges Characteristic Supply voltage Symbol Min Typ. Max Unit VCC ― 5 24 V IF ― ― 25 mA Topr −10 ― 75 °C Forward current Operating temperature Opto Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Min Typ. Max Unit 1.00 1.15 1.30 V Forward voltage VF IF = 10 mA Reverse current IR VR = 5 V ― ― 10 μA Peak emission wavelength λP IF = 10 mA ― 940 ― nm Dark current ID VCE = 24 V, IF = 0 ― ― 0.1 μA Peak sensitivity wavelength λP ― 870 ― nm VCE = 2 V, IF = 10 mA 3 ― 20 % IF = 20 mA, IC = 0.3 mA ― 0.1 0.35 V Current transfer ratio Coupled Test Condition IC/IF Collector−emitter saturation voltage Switching times VCE (sat) Rise time tr VCC = 5 V, IC = 1 mA ― 15 ― Fall time tf RL = 1 kΩ ― 15 ― Response time (1) t1 VCC = 4.4 V, IC = 13 mA ― ― 80 Response time (2) t2 RL = 47 kΩ ― ― 800 VCC=4.4V IF (Note) μs Note: t1, t2 test condition IF=13mA RL=47kΩ VOUT VOUT 2.5V 0.8V t1 2 t2 2007-10-01 TLP830(F) Precaution 1. If the chemical are used for cleaning, the soldered surface only shall be cleaned with chemicals avoiding the whole cleaning of the package. 2. The container is made of polybutylene terephthalate. Oil or chemicals may cause melting or cracks. Check the environment carefully before installing. 3. Shall be mounted on an unwarped surface. 4. A visible light cut−off type photo transistor which blocks light with frequencies of 700nm or above is used. However, the device cannot block ambient light with a wavelength of 700nm or more or sunlight. Install avoiding the disturbance light. 5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1: 1. IC / IF (t) PO (t) = IC / IF (0) PO (0) 3 2007-10-01 TLP830(F) Outline: TOSHIBA Unit: mm Weight: 0.4 g (typ.) Pin Connections 1 4 2 3 1. Anode 2. Cathode 3. Collector 4. Emitter 4 2007-10-01 TLP830(F) PC – Ta 80 Allowable collector power dissipation PC (mW) Allowable Forward current IF (mA) IF – Ta 80 60 40 20 0 0 20 40 60 80 60 40 20 0 100 0 Ambient temperature Ta (°C) IF – VF Current transfer ratio IC / IF (%) (mA) Forward current IF 50 30 10 5 Ta=75°C 50 1 0.8 0 1.0 1.1 80 100 (typ.) Ta=25°C VCE = 2 V VCE = 0.4 V 30 10 5 3 −25 1 0.9 60 IC / IF – IF (typ.) 100 25 40 Ambient temperature Ta (°C) 50 3 20 1.2 Forward voltage VF 1.3 3 5 10 30 50 100 1.4 Forward current IF (V) 5 (mA) 2007-10-01 TLP830(F) IC – IF 10 VCE = 2 V (typ.) Ta = 25 °C 20 2.5 (mA) VCE = 0.4 V 3 Collector current IC (mA) 3.0 Ta=25°C 5 Collector current IC IC – VCE (typ.) 1 0.5 0.3 2.0 15 1.5 10 1.0 IF=5mA 0.5 0.1 1 3 5 10 30 Forward current IF 50 0 0 100 (mA) Relative IC – Ta (typ.) 6 8 10 12 VCE (V) ID(ICEO) – Ta (typ.) 5 1.0 1 0.8 Dark current ID(ICEO) (μA) Relative collector current 4 Collector-emitter voltage 1.2 VCE = 2 V 0.6 IF = 20 mA IF = 10 mA 0.4 0.2 −40 2 IF = 5 mA −20 0 20 40 60 80 100 Ambient temperature Ta (°C) VCE = 24 V 10 10−1 5 10−2 10−3 10−4 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2007-10-01 TLP830(F) VCE(sat) – Ta Collector-emitter saturation voltage VCE(sat) (V) 0.20 0.16 (TYP.) Switching time test circuit IC = 0.5 mA IF = 20 mA IF VCC 0.12 RL VOUT IF 90% 10% VOUT td tr 0.08 tf ts 0.04 0 −40 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) Switching characteristics (non saturated operation) 500 300 Switching characteristics (saturated operation) (typ.) 3000 Ta = 25 °C tr･tf VCC = 5 V VOUT = 1 V Switching time (μs) Switching time (μs) 50 td ts 10 tf IF = 20 mA 100 30 Ta = 25 °C (typ.) 5 1000 V CC = 5 V 500 VOUT ≧ 4.65V ts 300 100 50 tr 30 3 10 1 0.5 0.3 0.1 5 3 1 0.3 0.5 1 3 5 10 30 50 td 3 5 10 30 50 100 300 500 Load resistance RL (kΩ) Load resistance RL (kΩ) 7 2007-10-01 TLP830(F) Detecting position characteristics(1) 1.2 Relative collector current 1.0 − 0 d 0.8 + 0.6 shutter 0.4 Detection position 0 −0.2 −0.1 0 0.1 Distance 0.2 IF=10mA VCE=2V Ta=25°C shutter 0.8 0.6 d 0.4 Detection d = 0 ±0.11 mm 0.2 (typ.) 1.2 IF=10mA VCE=2V Ta=25°C 1.0 Relative collector current Detecting position characteristics(2) (typ.) 0.2 0.3 0 3 0.4 position +1.1 d=5.5 −1.5 mm 4 5 6 Distance d (mm) 7 8 9 d (mm) Positioning Of Shutter And Device To operate correctly, make sure that the shutter and the device are positioned as shown in the figure below. The shit pitch of the shutter must be set wider than the slit width of the device. Determine the width taking the switching time into consideration. Unit in mm Shutter A 5.5 4.0max. 6.6min. Sensor center A′ A-A’ cross section 8 2007-10-01 TLP830(F) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01