TLP832(F) TOSHIBA Photointerrupter Infrared LED + Phototransistor TLP832(F) Lead(Pb)-Free Electronic Equipment Such As VCRS And CD Players Office Equipment Such As Copiers, Printers And Fax Machines Automatic Vending Machines Various Position Detection Sensors The TLP832(F) photointerrupter consists of a GaAs infrared LED and an Si phototransistor. Housed in a short− lead package, this device is ideal for automatic mounting. • Designed for direct mounting on printed circuit boards (positioning pins included). • Short leads enabling automatic mounting : Lead length 3.4mm ± 0.3mm • Board thickness: 1.6mm or less • Gap: 5mm • Resolution: Slit width = 0.5mm • High current transfer ratio: IC/IF = 5% (min) • High temperature operation: Topr = 95°C (max) TOSHIBA 11−14F1 Weight: 0.58 g (typ.) • High response speed: tr, tf = 15μs (typ.) • Detector impermeable to visible light • package material: Polybutylene terephthalate (UL94V−0, black) 1 2007-10-01 TLP832(F) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA LED Forward current Forward current derating 25°C < Ta ≦ 85°C Ta > 85°C −0.33 ΔIF / °C VR 5 V Collector−emitter voltage VCEO 35 V Emitter−collector voltage VECO 5 V Collector power dissipation PC 75 mW Collector power dissipation derating (Ta > 25°C) ΔPC / °C −1 mW / °C IC 50 mA Operating temperature Topr −30~85 °C Storage temperature Tstg −40~100 °C Tsol 260 °C Detector Reverse voltage mA / °C −2 Collector current Soldering temperature (5 s) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: At the location of 1.5mm from the resin package bottom Markings Monthly lot number Month of manufacture (January to December denoted by letters A to L respectively) Year of manufacture (last digit of year of manufacture) Operating Ranges Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― ― 25 mA Topr −10 ― 75 °C Operating temperature 2 2007-10-01 TLP832(F) Optical And Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Min Typ. Max Unit 1.00 1.15 1.30 V Forward voltage VF IF = 10mA Reverse current IR VR = 5V ― ― 10 μA Peak emission wavelength λP IF = 10mA ― 940 ― nm VCE = 24V, IF = 0 ― ― 0.1 μA ― 870 ― nm VCE = 2V, IF = 10mA 5 ― 100 % IF = 20mA, IC = 0.5mA ― 0.1 0.35 V Dark current ID (ICEO) Peak sensitivity wavelength λP Current transfer ratio Coupled Test Condition IC / IF Collector−emitter saturation voltage VCE (sat) Rise time tr Fall time tf VCC = 5V, IC = 1mA, RL = 1kΩ (Note 2) ― 15 50 ― 15 50 μs (Note 2): Switching time measurement circuit and waveform VCC IF RL VOUT IF 90% 10% VOUT td tr tf ts Precautions 1. When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not immerse the entire package in the cleaning solvent. Chemical residue on the LED emitter or the phototransistor may adversely affect the optical characteristics of the device and may drastically reduce the conversion efficiency. 2. Care must taken in relation to the environment in which the device is to be installed. Oil or chemicals may cause the package to melt or crack. 3. Mount the device on a level surface. 4. Keep the device away from external light. Although the phototransistor is of low optical sensitivity, the device may malfunction if external light with a wavelength of 700 nm or more is allowed to impinge on it. 5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1. IC / IF (t) PO (t) = IC / IF (0) PO (0) 3 2007-10-01 TLP832(F) Package Dimensions 11-14F1 Unit: mm Weight: 0.58 g (typ.) Pin Connection 1 4 2 3 1.Anode 2.Cathode 3.Collector 4.Emitter 4 2007-10-01 TLP832(F) Stick Specification Of TLP832(F) 15.8 Unit:mm Unless otherwise specified, tolerance:±0.3mm Material:Polyvinyl chloride (PVC) Top view 9.4 6.4 14.8 10.8 0.6 14.6 633 1.6 TOSHIBA ANTISTATIC MADE IN JAPAN 650.0±1.5 4.0 Φ3.15 TOSHIBA ANTISTATIC MADE IN JAPAN Cross section 5.0 3.3 (note) : Marking color is red. 5 2007-10-01 TLP832(F) ○Packing Format Pack 100 devices are packed in a magazine and put it in a carton. The carton contains 20 magazines. Stopper pin TLP832(F) Stopper Magazine Plastic adhesive tape Quality assurance seal Barcode label Carton containing 20 magazines 85mm 680mm 95mm Magazine containing 100 devices ○Label Product number:TLP832 Add. Code:(F) P/N TYPE TLP832 ADD.C Q´TY Quantity PCS. NOTE Lot number Toshiba code Barcode TOSHIBA MADE IN JAPAN 6 2007-10-01 TLP832(F) IF – Ta PC – Ta 80 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 80 60 40 20 0 0 20 40 60 Ambient temperature 80 60 40 20 0 0 100 20 60 Ambient temperature Ta (°C) IF – VF 40 80 100 Ta (°C) IC/IF – IF (typ.) 100 50 Ta = 25 °C VCE = 2 V 30 Current transfer ratio IC /IF (%) Forward current IF (mA) 50 10 5 Ta=75°C 3 50 1 0.8 25 VCE = 0.4 V 30 Sample 2 10 Sample 1 5 3 0 −25 1 0.9 1.0 1.1 1.2 Forward voltage VF 1.3 3 1.4 10 Forward current IF (V) IC – IF 10 5 30 Ta = 25 °C (typ.) Ta = 25 °C VCE = 2 V VCE = 0.4 V 20 (mA) 5 3 Collector current IC Collector current IC (mA) 5 Sample 2 Sample 1 1 0.5 0.3 4 15 3 10 2 IF = 5 mA 1 0.1 1 3 5 10 Forward current IF 30 50 0 0 100 2 4 6 Collector-emitter voltage (mA) 7 100 (mA) IC – VCE 6 50 8 10 12 VCE (V) 2007-10-01 TLP832(F) Relative IC – Ta ID(ICEO) – Ta (typ.) 1.0 1 VCE = 24 V ID(ICEO) (μA) 0.8 VCE = 2 V 0.6 IF = 20 mA IF = 10 mA 0.4 IF = 5 mA 0.2 −40 −20 0 20 40 60 Ambient temperature 80 100 Ta (°C) 10 10 10 10 10 −1 5 −2 −3 −4 0 20 40 60 80 Ambient temperature VCE(sat) – Ta 100 500 IC = 0.5 mA 300 IF = 20 mA 0.16 120 Ta (°C) Switching characteristics (non saturated operation) (typ.) (typ.) Ta = 25 °C tr, tf VCC = 5 V VOUT = 1 V 100 0.12 Switching time (μs) Collector-emitter saturation Voltage VCE(sat) (V) 0.20 (typ.) 5 Dark current Relative collector current 1.2 0.08 0.04 0 −40 −20 0 20 40 Ambient temperature 60 80 100 Ta (°C) 50 30 ts 10 5 3 1 0.5 0.3 0.1 0.3 0.5 1 3 5 10 30 50 Load resistance RL (kΩ) Switching characteristics (saturated operation) 3000 td (typ.) Ta = 25 °C tf IF = 20 mA 1000 VCC = 5 V Switching time (μs) 500 VOUT ≧ 4.65 V ts 300 100 50 tr 30 10 5 3 1 td 3 5 10 30 50 100 300 500 Load resistance RL (kΩ) 8 2007-10-01 TLP832(F) Detection position Characteristics(1) Detection position Characteristics(2) (typ.) 1.2 IF = 10 mA IF = 10 mA VCE = 2 V Ta = 25 °C − 0 + d 0.8 Shutter 0.6 0.4 Detection position 0.2 VCE = 2 V 1.0 Relative collector current 1.0 Relative collector current (typ.) 1.2 Ta = 25 °C Shutter 0.8 0.6 d 0.4 Detection position +1.25 0.2 d=7.95−1.35mm d=0±0.3mm 0 0 −3 −2 −1 0 Distance 1 2 3 4 5 6 d (mm) 7 8 Distance 9 10 11 12 d (mm) Relative Positioning Of Shutter And Device For normal operation position the shutter and the device as shown in the figure below. By considering the device’s detection direction characteristic and switching time, determine the shutter slit width and pitch. Shutter A A´ Unit:mm 7.95 6.6max 9.2min Center of sensor Cross section between 9 A and A´ 2007-10-01 TLP832(F) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2007-10-01