TLN225(F) TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN225(F) Lead(Pb)-Free For Space−Optical−Transmission Unit: mm • High radiant power: Po = 18mW(typ.) at IF = 50mA • Wide half−angle value: θ1/2 = ±21°(typ.) • High−speed response: tr, tf = 30ns(typ.) • Light source for remote control • Designed for transmission of wireless AV signals • Designed for high−speed data transmission Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 100 mA Pulse forward current IFP 1000 (Note 1) mA Power dissipation PD 220 mW Reverse voltage VR 4 V Operating temperature Topr −25~85 °C Storage temperature Tstg −30~100 °C Soldering temperature(5s) Tsol 260 °C TOSHIBA 4−5MA1 Pin Connection Note: Using continuously under heavy loads (e.g. the application of 1. Anode 1 2 high temperature/current/voltage and the significant change in 2. Cathode temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Frequency = 100kHz, duty = 1% Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 50 ｍA ― 1.6 1.8 V Reverse current IR VR = 4 V ― ― 10 μA Radiant power PO IF = 50 mA 14 18 ― mW Radiant intensity IE IF = 50 mA ― 40 ― mW / sr IFP = 100 mA, PW = 100 ns ― 30 ― ns 10 15 ― MHz ― 110 ― pF Rise time, fall time tr, tf Cut−off frequency fc Capacitance CT VR = 0, f = 1 MHz Peak emission wavelength λP IF = 50 mA 830 870 900 nm Spectral line half width Δλ IF = 50 mA ― 50 ― nm 1 θ 2 IF = 50 mA ― ±21 ― ° Half value angle IF = 50 mADC +5 mAp−p (Note 2) Note 2: Frequency when modulation light power decreases by 3dB from 1 MHz. 1 2007-10-01 TLN225(F) Precautions Please be careful of the followings. 1. Soldering must be performed under the lead stopper. 2. When forming the leads, bend each lead under the stopper without leaving forming stress to the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant power falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. 2 2007-10-01 TLN225(F) IF – Ta IF – VF 100 (mA) 85°C 80 Forward current IF Allowable forward current IF (mA) (typ.) 100 120 60 40 10 75°C -25°C 50°C 0°C 1 25°C 0.1 20 0 0 20 40 60 80 100 120 0.01 1 140 1.2 1.8 500 Pulse forward current IFP (mA) (V) Forward voltage VF 1000 IF = 80mA 1.6 IF = 50mA 1.5 IF = 20mA 1.4 IF = 5mA 1.3 1.2 1.1 -50 -25 0 25 50 75 100 (typ.) 50 30 10 Pulse width ≦ 100μs Repetitive frequency = 100Hz Ta = 25°C 5 3 3 2 1 Ta = 25°C 10000 7 VFP (V) Relative PO – IFP 1.2 6 5 4 Pulse Forward Voltage IFP – PW 20000 (typ.) Pulse width = 1ms 1.0 Duty = 10% 5000 Relative radiant power Allowable pulse forward current IFP (mA) (V) 100 1 0 125 2 300 Ambient temperature Ta (°C) 3000 f = 100Hz 200 500 1000 500 300 100 1.8 IFP – VFP (typ.) 1.9 1.7 1.6 Forward voltage VF Ambient temperature Ta (°C) VF – Ta 1.4 1k 2k 5k 10k 0.8 0.6 0.4 0.2 50 30 3μ 10μ 30μ 100μ Pulse width 300μ 1m 3m 0 0 10m 200 4000 600 800 1000 Pulse forward current IFP (nA) PW (s) 3 2007-10-01 TLN225(F) Relative PO – Ta Distance Characteristics (typ.) 1000 Relative radiant power 10 TPS703(F) short circuit current ISC (μA) IF = 50mA 1 0.1 -50 -25 0 25 50 75 100 125 Ambient temperature Ta (°C) 100 10 Pop = 29mW at IFP = 180mA, f = 100kHz, duty = 50% 1 Po = 16mW at IF = 50mA Wavelength Characteristic (typ.) 1.0 0.1 0.01 IF = 50mA 1 0.1 Distance 10 d (m) Relative radiant power 0.8 0.6 0.4 0.2 0 800 880 840 960 920 1000 Wavelength λ (nm) Radiation Pattern (typ.) Frequency Characteristic (typ.) 4 Ta = 25°C 2 0° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° -2 -4 -6 70° 70° -8 80° 80° 90° Response 10° (dB) 0 20° 0 0.2 0.4 0.6 0.8 90° 1.0 -10 0.1 Relative radiant power 0.3 0.5 1 3 Frequency f 4 5 10 30 50 100 (MHz) 2007-10-01 TLN225(F) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-10-01