TOSHIBA TPS601AF_07

TPS601A(F)
TOSHIBA Phototransistor
Silicon NPN Epitaxial Planar
TPS601A(F)
Lead(Pb)-Free
Photoelectric Counter
Position Detection
Various Kinds Of Readers
Unit in mm
•
TO−18 metal CAN package
•
High sensitivity.
•
Sharp directivity. Incident light can be effectively used.
: θ1/2 = ± 10° (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector−emitter voltage
VCEO
40
V
Emitter−collector voltage
VECO
5
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Collector power dissipation
derating (Ta > 25°C)
ΔPC /°C
−1.2
mW / °C
Operating temperature range
Topr
−40~125
°C
Storage temperature range
Tstg
−55~150
°C
TOSHIBA
0−5A1
Weight: 0.39 g (typ.)
Pin Connection
2
1
1 . Emitter
2 . Collector
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2007-10-01
TPS601A(F)
Opto−Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Dark current
ID (ICEO)
Test Condition
VCE = 30V, E = 0
TPS601A (F)
Light current
Typ.
Max
Unit
―
0.01
0.2
μA
100
―
―
VCE = 3V
TPS601A (A,F)
2
E = 0.1mW / cm
(Note) TPS601A (B,F)
100
―
300
200
―
600
TPS601A (C,F)
400
―
1200
―
0.25
0.4
―
2
―
―
2
―
λP
―
800
―
nm
1
2
―
±10
―
°
IL
μA
2
Collector−emitter saturation
voltage
Switching time
Min
VCE (sat)
rise time
tr
fall time
tf
Peak sensitivity wavelength
θ
Half value angle
IC = 30 μA, E = 0.1mW / cm
VCC = 5V, IC = 10mA
RL = 100Ω
(Note)
V
μs
Note: Color temperature = 2870K, standard tungsten lamp.
Precaution
Please be careful of the followings.
1. Soldering temperature: 260°C max.
Soldering time: 5s max.
(Soldering portion of lead: Above 1.5mm from the body of the device.)
2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device.
Soldering shall be performed after lead forming.
Product Indication
Model name
Monthly production lot
S601A・
Production month
(Jan-Dec are indicated by alphabets of A-L)
Production year(last digit of A.D. is indicated)
Letter color : Red
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2007-10-01
TPS601A(F)
Fig.1 Switching time test circuit
VCC
Input
Input pulse
0
TLN108(F)
(GaAs LED)
Output
R
90%
RL
Output pulse
10%
0
tf
tr
PC – Ta
ID – Ta
160
10
(typ.)
2
VCE = 30 V
Dark current ID (μA)
Allowable collector power
Dissipation PC (mW)
E=0
120
80
10
1
10-1
10-2
40
10-3
0
0
40
120
80
Ambient temperature
160
10-4
0
200
IL – E
40
80
120
160
Ambient temperature Ta (°C)
Ta (°C)
(typ.)
Spectral Response
50
200
(typ.)
Ta = 25°C
30
5
3
1
VCE = 3V
0.5
Ta = 25°C
0.3
0.1
0.1
1
3
30
10
5
1
400
30
10
50
3
Color Temperature=2870K
0.3
(%)
10
Relative sensitivity
Light current IL (mA)
100
2
Radiant incidence E (mW/cm )
600
800
1000
1200
Wavelength λ (nm)
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2007-10-01
TPS601A(F)
Frequency Characteristics
Directional Sensitivity Characteristic
(typ.)
(typ.)
12
VCC = 5V
1200
Ta = 25℃
Light source = TLN108(F)
(GaAs LED)
(Ta = 25°C)
Radiation Angle
10°
20°
0°
10°
(dB)
8
20°
Relative input
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
0.8
0.6
0.4
0.2
RL=100Ω
-4
-8
-12
500Ω
-16
-20
1
90°
0
0
1kΩ
80°
90°
1.0
4
10
30
100
300
1000
Relative sensitivity
Frequency f
Switching Characteristics
Ta=25°C
TLN108(F)
(GaAs LED)
(typ.)
Input
pulse
VCC
Output
10V
pulse
Output
td
RL
Input
R
90%
10%
Switching time (μs)
tr
200
(kHz)
tf
tr (RL=10kΩ)
100
50
tf (RL=10kΩ)
30
tr (RL=1kΩ)
10
tf (RL=1kΩ)
td (RL=10kΩ)
td (RL=100Ω, 1kΩ)
3 tf (RL=100Ω)
tr (RL=100Ω)
5
1
0.02
0.1
0.3
1
3
10
Collector current IC (mA)
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2007-10-01
TPS601A(F)
Relative IL – Ta
Coupling Characteristics With
TLN201(F)
(typ.)
2.0
100
E = 0.1mW/cm2
Ta = 25℃
50
VCE = 3V
(mA)
Collector current IC
Relative light current
1.6
1.2
0.8
0.4
30
IE=25.5mW/sr
10
5
3
1
0.5
TPS601A(F) using sample
IL = 226μA
at VCE = 3V
2
E = 0.1mW/cm
0.3
0
-40
-20
0
20
60
40
80
0.1
1
100
Ambient temperature Ta (°C)
d
3
5
10
Distance
30 50
100
300 500 1000
d (mm)
Coupling Characteristics With
TLN108(F)
100
Ta =25°C
Collector current IC
(mA)
50
30
11.7
23
IE=4mW/sr
10
5
3
1 TPS601A(F) … IL = 226μA
at VCE = 3V
0.5
E = 0.1mW/cm2
1
0.3
d
0.1
0.5
1
3
5
Distance
10
30
50
100
200
d (mm)
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2007-10-01
TPS601A(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-10-01