TPS616(F) TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS616(F) Lead(Pb)-Free Floppy Disk Drive VCR Position Detector Of Home Electric Equipment Opto-electronic Switch • φ3.1mm epoxy resin package. (black) • Light current: IL = 10μA (min.) at E = 0.1mW/cm2 • Half value angle: θ1/2 = ±30° (typ.) • Protected from external light by black mold packaging. Unit in mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 5 V Collector current IC 20 mA Collector power dissipation PC 75 mW Collector power dissipation derating (Ta > 25°C) ΔPC/°C −1 mW/°C Pin Connection Operating temperature range Topr −30~85 °C 1 Storage temperature range Tstg −30~100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 TOSHIBA 0−3D1 Weight: 0.12g (typ.) 2 1 . Emitter 2 . Collector 2007-10-01 TPS616(F) Opto-electrical Characteristics (Ta = 25°C) Characteristic Dark current Symbol ID(ICEO) Test Condition VCE = 24V Min. Typ. Max. Unit ⎯ 0.01 0.1 μA 10 ⎯ 75 μA ⎯ 0.2 0.4 V 2 VCE = 3V, E = 0.1mW / cm IL (Note 2) (Note 1) Light current 2 IC = 5μA, E = 0.1mW / cm Collector-emitter saturation voltage VCE(sat) peak sensitivity wavelength λP ⎯ ⎯ 900 ⎯ nm 1 θ 2 ⎯ ⎯ ±30 ⎯ ° Half value angle Switching time (Note 1) Rise time tr VCC = 10V,IC = 1mA ⎯ 9 ⎯ Fall time tf RL = 1kΩ ⎯ 10 ⎯ μs Note 1: Color temperature = 2870K,standard tungsten lamp. Note 2: IL classification A: 10~25μA, B: 17~42.5μA, C: 30~75μA, AB: 10~42.5μA, BC: 17~75μA Precaution Please be careful of the followings. 1. Soldering temperature: 260°C max. Soldering time: 3s max. (Soldering portion of lead: Above 1.5mm from the body of the device) 2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device. Soldering shall be performed after lead forming. 2 2007-10-01 TPS616(F) Fig.1 Switching time test circuit VCC Input TLN119(F) (GaAs LED) Input pulse 0 TPS616(F) Output R 90% RL Output pulse 10% 0 tf tr ID – Ta PC – Ta 1 E=0 60 Dark current ID (μA) Allowable collector power dissipation PC (mW) 80 40 20 0 0 20 40 60 Ambient temperature 80 Ta IL – E Light current IL (μA) 100 10-2 -3 0 20 (°C) 40 60 80 100 Ambient temperature Ta (°C) IL – VCE (Typ.) VCE = 3 V Ta = 25°C Color temperature = 2870K Ta = 25°C (Typ.) 0.6 250 0.5 50 30 10 5 200 0.4 150 0.3 100 0.2 50 3 1 0.01 10-1 10 100 Light current IL (μA) 300 (Typ.) VCE = 24 V 0.03 0.05 0.1 0.3 0.5 0 0 1 Radiant incidence E (mW / cm2) E=0.1mW / cm2 2 4 6 Collector-emitter voltage 3 8 10 VCE (V) 2007-10-01 TPS616(F) Directional Sensitivity Characteristic (Typ.) (Ta = 25°C) Frequency Characteristics (Typ.) 12 VCC = 5 V Ta = 25°C Light source = TLN119(F) (GaAs LED) Radiation angle 20° 10° 0° 10° (dB) 8 20° Relative output 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 1.0 0.8 0.6 0.4 0 0.2 4 0 RL=100Ω -4 -8 10kΩ -12 80° -16 90° -20 1 3 5 Relative sensitivity 10 30 5kΩ 1kΩ 50 Frequency f 500Ω 100 300 500 1000 (kHz) Coupling Characteristics With TLN119(F) Switching characteristics (Typ.) 3000 Ta=25°C 90% Vcc= 10V Input 10% Output pulse 1000 90% Output TLN119(F) (GaAs LED) R Input pulse TLN119(F) IE=3.0mW/sr 300 tf (μA) tr 200 tr(RL=10kΩ) 100 Collector current IC Switching time (μs) 500 10% R L tf(RL=10kΩ) 50 30 tf(RL=1kΩ) 10 1.5 100 50 30 Ta = 25°C TPS615(F) Using sample 10 tr(RL=1kΩ) tf(RL=100Ω) 5 0.5 :IL = 28.1μA at VCE = 3V E = 0.1mW/cm2 5 3 I 3V IC C 3 3V tr(RL=100Ω) 1 0.02 1 0.05 0.1 0.3 0.5 Collector current IC 1 3 5 1 (mA) d TLN119 TLN119(F) 3 d TPS616 TPS615(F) 5 10 Distance 4 30 50 100 200 d (mm) 2007-10-01 TPS616(F) Spectral Response (Typ.) 120 Ta = 25°C Relative sensitivity (%) 100 80 60 40 20 0 0 200 400 600 800 1000 1200 Wavelength λ (nm) 5 2007-10-01 TPS616(F) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01