TLP733,TLP734 TOSHIBA Photocoupler GaAs Ired&Photo−Transistor TLP733, TLP734 Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP734 is no−base internal connection for high−EMI environments. • Collector−emitter voltage: 55 V (min.) • Current transfer ratio: 50% (min.) Rank GB: 100% (min.) • UL recognized: UL1577, file no. E67349 • BSI approved: BS EN60065: 1994 Certificate no. 7364 BS EN60950: 1992 Certificate no. 7365 • TOSHIBA SEMKO approved: SS4330784 Weight: 0.42 g Certificate no. 9325163, 9522142 • • 11−7A8 Isolation voltage: 4000 Vrms (min.) Option (D4) type VDE approved: DIN VDE0884 / 06.92, Certificate no. 74286, 91808 Maximum operating insulation voltage: 630, 890 VPK Highest permissible over voltage: 6000, 8000 VPK (Note) • Pin Configurations (top view) TLP733 When a VDE0884 approved type is needed, please designate the “Option (D4)” Creepage distance 7.62 mm pich standard type : 7.0 mm (min.) 10.16 mm pich TLP×××F type 8.0 mm (min.) Clearance : 7.0 mm (min.) 8.0 mm (min.) Internal creepage path : 4.0 mm (min.) 4.0 mm (min.) Insulation thickness 0.5 mm (min.) : 0.5 mm (min.) 1 TLP734 1 6 1 6 2 5 2 5 3 4 3 4 1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base 1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc 2002-09-25 TLP733,TLP734 Current Transfer Ratio Type Classi− fication *1 Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min. Max. 50 600 Blank, Y, Y , G, G , B, B , GB 50 150 Y, Y 100 300 G, G 200 600 B, B 100 600 G, G , B, B , GB (None) TLP733 TLP734 Rank GR Rank GB Marking Of Classification ■ ■ ■ ■ ■ ■ ■ ■ *1: Ex. rank GB: TLP733 (GB) Note: Application type name for certification test, please use standard product type name, i.e. TLP733 (GB): TLP733 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 60 mA ΔIF / °C −0.7 mA / °C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 55 V Collector−base voltage (TLP733) VCBO 80 V Emitter−collector voltage VECO 7 V Emitter−base voltage (TLP733) VEBO 7 V Collector current IC 50 mA Power dissipation PC 150 mW ΔPC / °C −1.5 mW / °C Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~100 °C Lead soldering temperature (10 s) Tsol 260 °C Total package power dissipation PT 250 mW ΔPT / °C −2.5 mW / °C BVS 4000 Vrms Forward current Detector LED Forward current derating (Ta ≥ 39°C) Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1 min., R.H.≤ 60%) 2 2002-09-25 TLP733,TLP734 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR)CEO IC = 0.5 mA 55 ― ― V Emitter−collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 ― ― V Collector−base breakdown voltage (TLP733) V(BR)CBO IC = 0.1 mA 80 ― ― V Emitter−base breakdown voltage (TLP733) V(BR)EBO IE = 0.1 mA 7 ― ― V Collector dark current ICEO (ambient light below 1000 ℓx) ― 0.01 (2) 0.1 (10) μA VCE = 24 V Ta = 85°C (ambient light below 1000 ℓx) ― 2 (4) 50 (50) μA (TLP733) ICER VCE = 24 V, Ta = 85°C RBE = 1MΩ ― 0.5 10 μA (TLP733) ICBO VCB = 10 V ― 0.1 ― nA (TLP733) hFE VCE = 5 V, IC = 0.5 mA ― 400 ― ― CCE V = 0, f = 1 MHz ― 10 ― pF Collector dark current Collector dark current DC forward current gain Capacitance collector to emitter VCE = 24 V 3 2002-09-25 TLP733,TLP734 Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Base photo−current Collector−emitter saturation voltage Symbol Test Condition MIn. Typ. Max. 50 — 600 100 — 600 Unit IC / IF IF = 5 mA, VCE = 5 V Rank GB IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB — 60 — 30 — — IF = 5 mA, VCB = 5 V — 10 — IC = 2.4 mA, IF = 8 mA — — 0.4 IC = 0.2 mA, IF = 1 mA Rank GB — 0.2 — — — 0.4 Min. Typ. Max. Unit — 0.8 — pF — Ω IPB VCE (sat) % % % V Isolation Characteristics (Ta = 25°C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H.≤ 60% 1×10 AC, 1 minute Isolation voltage BVS 12 10 14 4000 — — AC, 1 second, in oil — 10000 — DC, 1 minute, in oil — 10000 — Vdc Min. Typ. Max. Unit — 2 — — 3 — — 3 10 — 3 10 — 3 — — 40 — — 90 — — 3 — — 30 — — 60 — Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time tON Turn−off time tOFF Turn−on time tON Storage time tS Turn−off time tOFF Turn−on time tON Storage time tS Turn−off time tOFF Test Condition VCC = 10 V, IC = 2 mA RL = 100Ω RL = 1.9 kΩ RBE = open VCC = 5 V, IF = 16 mA (Fig.1) RL = 1.9 kΩ RBE = 220 kΩ (TLP733) VCC = 5 V, IF = 16 mA (Fig.1) 4 μs μs μs 2002-09-25 TLP733,TLP734 Fig. 1 Switching time test circuit IF VCC IF ts RL RBE VCE 4.5V VCE 0.5V tON 5 tOFF 2002-09-25 TLP733,TLP734 IF – Ta PC – Ta 200 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 100 80 60 40 20 0 −20 0 40 20 80 60 100 160 120 80 40 0 −20 120 0 IFP – DR Pulse width ≤ 100 μs Ta = 25°C 50 30 (mA) 500 Forward current IF Pulse forward current IFP (mA) IF – V F 1000 300 100 50 30 10 5 3 1 0.5 0.3 10−3 10−2 3 10−1 3 Duty cycle ratio 3 10 0.1 0.6 0 0.8 DR 1.0 ∆VF / ∆Ta – IF 1.4 1.6 1.8 (V) IFP – VFP 1000 −2.4 Pulse forward current IFP (mA) Forward voltage temperature coefficient ∆VF / ∆Ta (mV / °C) 1.2 Forward voltage VF −2.8 −2.0 −1.6 −1.2 −0.8 500 300 100 50 30 10 Pulse width ≤ 10 μs 5 Repetitive 3 frequency = 100 Hz −0.4 0.1 120 100 Ta = 25°C 10 3 100 80 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3000 60 40 20 Ta = 25°C 0.3 1 3 Forward current IF 10 1 0.4 30 50 (mA) 0.8 1.2 1.6 Pulse forward voltage 6 2.0 2.4 2.8 VF (V) 2002-09-25 TLP733,TLP734 IC – VCE IC – VCE 50 30 Ta = 25°C 20 mA 15 mA 30 PC (MAX.) 10 mA IF = 5 mA 10 0 0 2 40 mA 25 30 mA 20 50 mA (mA) 40 Collector current IC Collector current IC (mA) 50 mA Ta = 25°C Collector-emitter voltage 20 mA 15 10 mA 10 5 mA 5 8 6 4 30 mA 20 IF = 2 mA 0 0 10 0.2 VCE (V) 0.4 Collector-emitter voltage IC – IF IC / IF (%) 3 Current transfer ratio (mA) Collector current IC SAMPLE A 1 SAMPLE B Ta = 25°C VCE = 5 V 0.1 VCE = 0.4 V 0.03 0.01 0.1 0.3 1 3 10 100 30 Forward current IF IPB (μA) Base photo current (mA) Collector current IC RBE=∞ VCC IF A 100kΩ 500kΩ 0.3 RBE 1 3 Forward current IF SAMPLE B 30 0.3 1 10 3 30 10 Ta = 25°C 300 100 30 10 VCB = 0 V VCB = 5 V VCB 3 IF 1 0.1 0.1 A 0.3 1 3 Forward current IF (mA) 7 100 (mA) 0.3 100 30 IPB – IF TLP733 10 0.3 50 Forward current IF 30 0.1 0.1 100 (mA) Ta = 25°C 1 SAMPLE A 10 0.1 300 50 VCE = 5 V 50kΩ VCE = 0.4 V 300 1000 3 VCE = 5 V 500 IC – IF at RBE TLP733 100 VCE (V) Ta = 25°C 30 0.3 1.2 1.0 IC / IF – IF 1000 10 0.8 0.6 10 30 100 (mA) 2002-09-25 TLP733,TLP734 ICEO / Ta VCE (sat) – Ta 0.24 Ambient light IF = 5 mA 101 Below = 0 ℓx Collector-emitter saturation voltage VCE (sat) (V) IC = 1 mA VCE = 24 V 100 Collector dark current ICEO (μA) 10 V 5V 10−1 0.20 0.16 0.12 0.08 0.04 −40 10 −20 −2 0 20 40 60 80 100 Ambient temperature Ta (°C) 10−3 TLP733 Switching Time – RL 100 tOFF 20 40 60 80 100 120 SWITCHING TIME Ambient temperature Ta (°C) 10 5 3 tON 1 1 3 5 10 30 50 100 300 (kΩ) VCE = 5 V 30 (mA) Ta = 25°C IF = 16 mA VCC = 5 V RBE = 220kΩ IF = 25 mA 50 Collector current IC 30 Load resistance RL IC – Ta 100 ts 50 (μs) 10−4 0 10 mA 5 mA 10 5 3 1 mA 1 0.5 0.5 mA 0.3 0.1 −40 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 8 2002-09-25 TLP733,TLP734 Switching Time RBE Switching Time – RL 50 Ta = 25°C 3000 I = 16 mA F VCC = 5 V 1000 tOFF 30 10 Switching time (μs) Switching time (μs) ts Ta = 25°C IF = 16 mA VCC = 5 V RL = 1.9kΩ 5 3 tON tOFF 300 ts 100 30 10 tON 3 1 100k 300k 1M 3M 1 1 ∞ Base emitter resistance RBE (Ω) 3 5 10 Load resistance RL 9 30 50 100 (kΩ) 2002-09-25 TLP733,TLP734 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2002-09-25