TLP130 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP130 Programmable Controllers AC / DC−Input Module Telecommunication Unit in mm The TOSHIBA mini flat coupler TLP130 is a small outline coupler, suitable for surface mount assembly. TLP130 consists of a photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and operate directly by AC input current. · Collector−emitter voltage: 80V(min.) · Current transfer ratio: 50%(min.) Rank GB: 100%(min.) · Isolation voltage: 3750Vrms(min.) · UL recognized: UL1577, file no.E67349 · Current transfer ratio TOSHIBA Classification Current Transfer Ratio IF = 5mA, VCE = 5V, Ta = 25°C Min. Max. Marking Of Classification Standard 50 600 Blank, Y, GR, GB Rank GB 100 600 GB,GR Weight: 0.09 g 1 (Note) Application type name for certification test, please use standard puroduct type name, i.e. TLP130(GB): TLP130 11−4C2 6 5 3 4 1 : Anode, Cathode 3 : Cathode, Anode 4 : Emitter 5 : Collector 6 : Base 1 2002-09-25 TLP130 Maximum Ratings (Ta = 25°C) Symbol Rating Unit Forward current IF(RMS) 50 mA Forward current derating (Ta≥53°C) ∆IF / °C -0.7 mA / °C Peak forward current (100µs pulse,100pps) IFP 1 A Junction temperature Tj 125 °C Collector-emitter voltage VCEO 80 V Collector-base voltage VCBO 80 V Emitter-collector voltage VECO 7 V Emitter-base voltage VEBO 7 V Collector current IC 50 mA Peak collector current (10ms pulse,100pps) ICP 100 mA Power dissipation PC 150 mW ∆PC / °C -1.5 mW / °C Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 200 mW ∆PT / °C -2.0 mW / °C BVS 3750 Vrms Detector LED Characteristic Power dissipation derating (Ta≥25°C) Junction temperature Total package power dissipation derating (Ta≥25°C) Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 48 V Forward current IF(RMS) ― 16 25 mA Collector current IC ― 1 10 mA Topr -25 ― 85 °C Operating temperature 2 2002-09-25 TLP130 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = ±10mA 1.0 1.15 1.3 V Capacitance CT V = 0, f = 1MHz ― 60 ― pF Collector-emitter breakdown voltage V(BR)CEO IC = 0.5mA 80 ― ― V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V Collector-base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V Emitter-base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V VCE = 48V ― 10 100 nA VCE = 48V, Ta = 85°C ― 2 50 µA Collector dark current ICEO Collector dark current ICER VCE = 48V, Ta = 85°C RBE = 1MΩ ― 0.5 10 µA Collector dark current ICBO VCB = 10V ― 0.1 ― nA DC forward current gain hFE VCE = 5V, IC = 0.5mA ― 400 ― ― Capacitance collector to emitter CCE V = 0 , f = 1MHz ― 10 ― pF Min. Typ. Max. Unit 50 ― 600 100 ― 600 ― 60 ― 30 ― ― IF = ±5mA, VCB = 5V ― 10 ― IC = 2.4mA, IF = ±8mA ― ― 0.4 IC = 0.2mA, IF = ±1mA ― 0.2 ― ― ― 0.4 ― 1 10 µA 0.33 ― 3 ― Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio IC / IF Saturated CTR IC / IF(sat) Base photo-current IPB Collector-emitter saturation voltage VCE(sat) (Note 2) IC(ratio) = Test Condition IF = ±5mA, VCE = 5V Rank GB IF = ±1mA, VCE = 0.4V Rank GB Rank GB Off-state collector current CTR symmetry Symbol IC(off) IC(ratio) IF = ±0.7mA, VCE = 48V IC(IF = -5mA) / IC(IF = 5mA) (Note 2) IC2 (IF = IF2, VCE = 5 V) IC1(IF = IF1, VCE = 5V) IF1 % % µA V IC1 VCE IC2 IF2 3 2002-09-25 TLP130 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance RS Test Condition Min. Typ. Max. Unit ― 0.8 ― pF 10 ― Ω 3750 ― ― AC, 1second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min. Typ. Max. Unit ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 2 ― ― 25 ― ― 40 ― ― 2 ― ― 20 ― ― 30 ― VS=0, f=1MHz 10 VS=500V 5´10 AC, 1minute Isolation voltage BVS 14 Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time tON Storage time tS Turn-off time tOFF Turn-on time tON Storage time tS Turn-off time tOFF Test Condition VCC = 10V, IC = 2mA RL = 100Ω (Fig.1) RL = 1.9 kΩ RBE = OPEN VCC = 5 V, IF = ±16mA (Fig.1) RL = 1.9kΩ RBE = 220kΩ VCC = 5 V, IF = ±16mA µs µs µs Fig. 1 Switching time test circuit IF VCC IF ts RL RBE VCE VCE tON 4 VCC 4.5V 0.5V tOFF 2002-09-25 TLP130 IF – Ta PC – Ta 200 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 100 80 60 40 20 0 -20 0 40 20 60 80 100 160 120 80 40 0 -20 120 0 40 20 IFP – DR Pulse width ≤ 100ms IF (mA) 300 Forward current Pulse forward current IFP (mA) 500 100 50 30 10 10 3 -2 3 10 Ta = 25°C 50 1000 -3 -1 3 10 0 Duty cycle ratio DR 30 10 5 3 1 0.5 0.3 0.1 0.6 0.8 1.0 1.2 Forward voltage 1.4 1.6 1.8 2.6 3.0 VF (V) IFP – VFP -2.8 (mA) -2.4 IFP 1000 Pulse forward current Forward voltage temperature Coefficient DVF / DTa (mV / °C) DVF / DTa – IF -3.2 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 120 IF – VF 100 Ta = 25°C 10 3 100 80 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3000 60 0.3 0.5 1 3 Forward current 5 10 30 500 300 100 50 30 10 IF (mA) Repetitive 3 1 0.6 50 Pulse width ≤ 10ms 5 Frequency = 100Hz Ta = 25°C 1.0 1.4 1.8 2.2 Pulse forward voltage VFP 5 (V) 2002-09-25 TLP130 IC – VCE IC – VCE 30 Ta = 25°C IC (mA) 50mA 40 30mA 20mA 15mA 30 Collector current Collector current IC (mA) 50 10mA PC(MAX) 20 IF = 5mA 10 0 0 2 6 4 8 Ta = 25°C IF = 50mA 40mA 30mA 20 20mA 10mA 10 5mA 2mA 0 0 10 0.2 IC – IF Current transfer ratio IC / IF Collector current IC (mA) Sample A 5 3 Sample B 1 0.5 VCE = 10V VCE = 5V 0.3 VCE = 0.4V 0.5 VCE = 10V VCE = 5V (%) Ta = 25°C 30 0.1 0.3 1 3 5 10 Forward current 30 50 Ta = 25°C VCE = 0.4V 500 300 Sample A 100 Sample B 50 30 0.3 100 0.5 1 3 IC – IF at RBE (ms) 10 IPB 30 Base photo current 30 5 3 VCC IF A 1 0.1 0.1 50kW 0.3 0.5 RBE (mA) Collector current IC 100 RBE = ∞ 500kW 100kW 1 3 5 Forward current 10 30 50 100 IF (mA) IPB – IF 300 Ta = 25°C 50 VCE = 5V 0.3 5 Forward current IF (mA) 100 0.5 1.0 IC / IF – IF 1000 50 10 0.8 Collector–emitter voltage VCE (V) Collector–emitter voltage VCE (V) 100 0.6 0.4 10 30 50 10 IF (mA) VCB IF VCB = 0V VCB = 5V A 3 1 0.3 0.1 0.1 100 Ta = 25°C 0.3 0.5 1 3 Forward current 6 5 10 30 50 100 IF (mA) 2002-09-25 TLP130 ICEO – Ta VCE(sat) – Ta 101 Collector dark current ICEO Collector–emitter saturation Voltage VCE(sat) (V) 0 (mA) 10 0.24 VCE = 48V 24V 10V 10-1 5V 10-2 IF = 5mA Ic = 1mA 0.20 0.16 0.12 0.08 0.04 0 -40 -20 20 0 40 80 60 100 Ambient temperature Ta (℃) 10-3 10-4 0 20 60 40 100 80 120 Ambient temperature Ta (°C) IC – Ta 100 Switching Time – RL VCE = 5V 50 Ta = 25°C 300 IF = 16mA IF = 25mA 30 VCC = 5V RBE = 220kW 10mA 5mA 10 Switching time (ms) Collector current IC (mA) 100 5 3 1mA 1 50 tOFF 30 ts 10 5 0.5 0.5mA 3 0.3 tON 0.1 -20 0 20 40 60 80 1 1 100 3 5 10 Load resistance RL Ambient temperature Ta (℃) 7 30 50 100 (kW) 2002-09-25 TLP130 Switching Time – RBE 1000 Switching Time – RL 1000 Ta = 25°C IF = 16mA 300 300 100 100 Switching time (ms) Switching time (ms) IF = 16mA 500 VCC = 5V VCC = 5V RL = 1.9kW 500 tOFF 50 ts 30 Ta = 25°C ts 50 30 10 10 5 5 3 tOFF 3 tON 1 100k 300k 1M tON Base-emitter resistance RBE 1 1 ∞ 3M 3 5 10 Load resistance RL (W) 8 30 50 100 (kW) 2002-09-25 TLP130 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-09-25