KSA1943 KSA1943 Audio Power Amplifier • • • • High Current Capability IC = -13A High Power Dissipation Wide S.O.A Complement to KSC5200 TO-264 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -230 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -230 -5 V V IC Collector Current -13 A IB Base Current -1.5 A PC Collector Dissipation (TC=25°C) 130 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 50 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=-5mA, IE=0 Min. -230 Typ. Max. Units V -230 V -5 V BVCEO Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=-5mA, IC=0 ICBO Collector Cut-off Current VCB=-230V, IE=0 -5.0 µA IEBO Emitter Cut-off Current VEB=-5V, IC=0 -5.0 µA hFE1 * DC Current Gain VCE=-5V, IC=-1A 55 hFE2 DC Current Gain VCE=-5V, IC=-7A 35 VCE(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V VBE(on) Base-Emitter ON Voltage VCE=-5V, IC=-7A -1.0 -1.5 V fT Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz Cob Output Capacitance VCB=-10V, f=1MHz 360 pF 160 60 * Pulse Test : PW=20us *hFE Classification Classification R O hFE1 55 ~ 110 80 ~ 160 ©2001 Fairchild Semiconductor Corporation Rev. B1, Septmeber 2001 KSA1943 Typical Characteristics IB = -900mA IB = -800mA IB = -1A Ic[mA], COLLECTOR CURRENT -18 IB = -700mA IB = -600mA IB = -500mA mA IB = -400 -16 -14 -12 IB = -300mA -10 IB = -200mA -8 IB = -100mA -6 -4 VCE = -5V hFE, DC CURRENT GAIN -20 100 10 -2 -0 -2 -4 -6 -8 1 0.1 -10 1 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VCE(sat)[V], SATURATION VOLTAGE 10 14 IC = 10 IB IC[A], COLLECTOR CURRENT 12 1 0.1 0.01 1E-3 0.01 0.1 1 VCE = 5V 10 8 6 4 2 0 0.0 10 0.2 0.4 Figure 3. Collector-Emitter Saturation Voltage 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 4. Collector-Emitter Saturation Voltage -100 160 IC MAX. (Pulsed*) -10 IC MAX. (DC) 100ms* DC -1 -0.1 *SINGLE NONREPETITIVE PC[W], POWER DISSIPATION 140 10ms* IC [A], COLLECTOR CURRENT 10 120 100 80 60 40 20 o PULSE TC=25[ C] 0 -0.01 1 10 100 0 25 50 75 100 125 150 175 o VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. B1, Septmeber 2001 KSA1943 Package Demensions (8.30) (1.00) (2.00) (7.00) 20.00 ±0.20 2.50 ±0.10 4.90 ±0.20 (1.50) (1.50) 2.50 ±0.20 3.00 ±0.20 (1.50) 20.00 ±0.50 (7.00) (2.00) (11.00) 1.50 ±0.20 ) .20 .00 0 ±0 0) 2.0 (R (R1 (0.50) ø3.3 (9.00) (9.00) (8.30) (4.00) 20.00 ±0.20 6.00 ±0.20 TO-264 +0.25 1.00 –0.10 +0.25 0.60 –0.10 2.80 ±0.30 (2.80) 5.45TYP [5.45 ±0.30] (0.15) (1.50) 3.50 ±0.20 5.00 ±0.20 5.45TYP [5.45 ±0.30] Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. B1, Septmeber 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4