KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : VCBO= -80V • Collector Power Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -80 Units V VCEO VEBO Collector-Emitter Voltage -60 V Emitter-Base Voltage -8 IC Collector Current V -700 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -80 BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -60 BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -8 ICBO Collector Cut-off Current VCB= -60V, IE=0 IEBO Emitter Cut-off Current VEB= -5V, IC=0 hFE * DC Current Gain VCE= -2V, IC= -50mA Typ. Max. Units V V V 40 -0.1 µA -0.1 µA 240 VCE (sat) * Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.3 -0.7 VBE (sat) * Base-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.9 -1.2 V fT Current Gain Bandwidth Productor VCE= -10V, IC= -50mA 100 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 13 pF V * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA931 Typical Characteristics -500 1000 VCE = -2V IB = -1.8µ A IB = -1.4µ A IB = -1.2µ A -400 -350 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -450 IB = -1.0µ A -300 IB = -0.8µ A -250 IB = -0.6µ A -200 -150 IB = -0.4µ A -100 100 IB = -0.2µ A -50 0 10 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -1 -50 -10 -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain -1000 -10 IC = 10 IB VCE = -2V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -100 VBE(sat) -1 -0.1 VCE(sat) -10 -100 -10 -1 0.0 -0.01 -1 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -10000 1.4 PC[W], POWER DISSIPATION IC[mA], COLLECTOR CURRENT 1.2 -1000 *200ms DC -100 O pe ra tio n o 1. Ta = 25 C 1.0 0.8 0.6 0.4 0.2 2. * Single Pulse -10 -1 -10 -100 V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation -1000 0.0 0 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE Figure 6. Power Derating Rev. A2, September 2002 KSA931 Package Dimensions TO-92L 0.70MAX. 1.00 ±0.10 1.70 ±0.20 13.50 ±0.40 8.00 ±0.20 4.90 ±0.20 0.80 ±0.10 1.00MAX. 0.50 ±0.10 1.27TYP [1.27 ±0.20] 0.45 ±0.10 3.90 ±0.20 0.45 ±0.10 3.90 ±0.20 1.45 ±0.20 2.54 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1