FJAF4310 FJAF4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210 TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value 200 Units V 140 V 6 V Collector Current (DC) 10 A IB Base Current (DC) 1.5 A PC Collector Dissipation (TC=25°C) 80 W RθJC Junction to Case 1.48 °C/W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=5mA, IE=0 Min. 200 140 BVCEO Collector-Emitter Breakdown Voltage IC=50mA, RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 ICBO Collector Cut-off Current VCB=200V, IE=0 Emitter Cut-off Current IEBO * DC hFE Typ. Max. V 6 V VEB=6V, IC=0 Current Gain VCE=4V, IC=3A Units V 50 10 µA 10 µA 180 VCE(sat) Collector-Emitter Saturation Voltage IC=5A, IB=0.5A Cob Output Capacitance VCB=10V, f=1MHz 250 0.5 pF V fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz * Pulse Test : PW=20µs hFE Classification Classification R O Y hFE 50 ~ 100 70 ~ 140 90 ~ 180 ©2002 Fairchild Semiconductor Corporation Rev. A, November 2002 FJAF4310 Typical Characteristics IB = 300mA 10 IB = 250mA 1000 IB = 200mA IB = 400mA VCE = 4 V 9 8 7 hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT IB = 150mA IB = 100mA 6 5 IB = 50mA 4 3 o Ta = 25 C o Ta = 125 C 100 o Ta = - 25 C 2 IB = 20mA 1 10 0.1 0 0 1 2 3 4 1 10 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characterstic Figure 2. DC current Gain 3.0 1 VCE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE IC = 10 IB 2.5 2.0 1.5 1.0 0.5 IC= - 10A IC= - 5A 0.0 0.0 0.4 0.8 1.2 1.6 o Ta = 125 C 0.1 o Ta = 25 C o Ta = - 25 C 0.01 0.01 2.0 0.1 1 10 IC [A], COLLECTOR CURRENT IB [A], BASE CURRENT Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage 10 t=10ms IC (Pulse) t=100ms 10 Ic [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT VCE = 4 V 8 6 o 4 2 Ta = 25 C o Ta = 125 C o IC(DC) 1 ℃ T C=25℃ Single Pulse Ta = - 25 C 0 0.0 0.5 1.0 VBE [V], Base-Emitter On VOLTAGE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 1.5 0.1 0.1 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Forward Bias Safe Operating Area Rev. A, November 2002 FJAF4310 Typical Characteristics (Continued) PC[W], COLLECTOR POWER DISSIPATION 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC [℃], CASE TEMPERATURE Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A, November 2002 FJAF4310 Package Dimensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 14.50 ±0.20 0.85 ±0.03 2.00 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1