TA2123AF
TOSHIBA Bipolar Integrated Circuit Silicon Monolithic
TA2123AF
1.5V Stereo Headphone Amplifier
The TA2123AF is the system amplifier IC which is developed
for playback stereo headphone equipments. It is built in dual
auto−reverse preamplifiers, dual power amplifiers with bass /
treble boost function, AMS (automatic music sensor) function,
beep function, AGC for power amplifier etc.
Features
·
Power amplifier stage
Weight: 0.17g (typ.)
· In case of output coupling type, the supply current
decreases.
(built−in center amplifier switch)
· Built−in bass boost function
· Built−in treble boost function
· Built−in power amplifier muting function
· Built−in input terminal for beep signal
· Built−in input capacitor for reducing buzz noise
· GV = 24dB (typ.)
· Built−in AGC circuit (in case of boost mode, this circuit operates.)
·
·
Low supply current
(VCC = 1.3V, f = 1kHz, RL = 32Ω, Ta = 25°C, typ.)
No Signal
0.1mW × 2
0.5mW × 2
Output coupling type
1.5mA
3.0mA
5.0mA
OCL type
2.2mA
4.9mA
8.6mA
Preamplifier stage
· Auto-reverse compatible
· Built-in input capacitor for reducing buzz noise
· Input coupling condensor-less
· Built-in metal mode drivers
· Preamplifier muting function
·
Built-in ripple filter circuit
·
Built-in AMS (automatic music sensor) function (mixer amplifier and level comparator)
·
Built-in power switch
·
Operating supply voltage range (Ta = 25°C)
VCC (opr) = 0.95~2.2V
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2002-10-30
TA2123AF
Block Diagram
33
MT SW
ON
PW SW
OFF
BST SW
F/R SW
RF OUT
29
27
EQB
PW NFB
PW INB
PW INA
28
26
25
BST
+
24
23
39
PW B
+
BEEP
AMS OUT
40
OFF
VCC
30
+
38
MT TC
BEEP
RF OUT
31
PW NFA
LPF
32
FWD
PRE SW
22
PW C
21
+
PW A
-
41
20
19
42
43
RIPPLE
FILTER
SW
+
COMP
-
44
18
17
16
45
ON
+
MIX
48
RL
OUTA
VCC
BASE
RF OUT
GND
AMS DET
14
AMS MIX
VREF OUT
AMS SW
12
+ -
AMS IN
11
PRE NFB
10
PRE OUTB
9
MTL DRVB
8
MTL DRVA
7
PRE OUTA
6
+ - PRE NFA
5
INA-R
4
INB-R
VREF OUT
3
+
2
OUTC
RL
-
1
OUTB
13
MTL DRV
INB-F
VREF IN
15
PREB
PW GND
+
-
VREF
47
PRE GND
+
-
PREA
-
46
M / N SW
INA-F
+ -
NOR
+ -
RF IN
+
AGC
DET
37
PW INC
BST OUT
BST NF
34
-
-
35
- +
OFF C-AMP SW
AGC IN
+ -
DET
+ 36
EQA
VREF OUT
OUTC
VREF OUT
VREF OUT
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2002-10-30
TA2123AF
Terminal Explanation
(terminal voltage: Typical terminal voltage at no signal with test circuit, VCC = 1.3V,
Ta = 25°C)
Terminal
No.
Name
1
INA-F
2
INB-F
4
INB-R
5
INA-R
6
PRE NFA
11
PRE NFB
3
VREF OUT
Function
Input of preamplifier
F / R SW (pin 44)
“L” level: Pin 1 / 2
“H” level: Pin 4 / 5
Refer to application note 3 (2)
VREF OUT
FWD
1
REV
5pF
10pF
PRE OUTA
10
PRE OUTB
8
MTL DRVA
9
MTL DRVB
12
AMS IN
5
500Ω
0.7
Output of reference circuit
Input of reference circuit
3
48
Output of preamplifier
7
Metal driver terminal
On resistance: 90Ω (typ.)
8
+ -
7
0.73
5pF 10pF
FWD REV
+ -
VREF IN
6
500Ω
NF of preamplifier
48
Terminal
Voltage
(V)
Internal Circuit
0.73
0.44
—
Input of mixer amplifier for AMS
signal
0.7
12
14
14
AMS MIX
Output of mixer amplifier for AMS
signal
0.7
VREF OUT
VREF OUT
13
AMS SW
AMS sensitivity changeover switch
(this switch synchronizes with the
MT SW)
13
—
MT SW ON : CURRENT SOURCE→ON
MT SW OFF : CURRENT SOURCE→OFF
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2002-10-30
TA2123AF
Terminal
No.
Name
15
AMS DET
Function
Terminal
Voltage
(V)
Internal Circuit
Input of AMS comparator circuit
0.73
15
40
16
GND
Output of AMS comparator circuit
High level: Rectangular pulse
Low level: “H”
—
RF OUT
Output of ripple filter
・Ripple filter circuit supplies
internal circuit except power
drive stage with power source
18
BASE
Base biasing terminal of transistor
for ripple filter
19
VCC
24
RF IN
20
OUTA
17
—
+ -
OUTB
26
PW NFB
0
VCC
24
RF OUT
19
18
17
—
1.3
Ripple filter terminal
1.23
to ADD amplifier
VREF OUT
20kΩ
20kΩ
PW NFA
27
PW INB
28
PW INA
20
29
Input of power amplifier
(this terminal also has function of
an ADD amplifier input.)
30kΩ
2kΩ
20kΩ
21
OUTC
0.56
28
NF of power amplifier
29
1.22
0.5
Output of power amplifier
22
—
VREF OUT
-+
AMS OUT
46.5kΩ
40
VREF OUT
0.73
0.73
VREF OUT
Output of center amplifier
0.56
32
21
PW INC
30kΩ
Input of center amplifier
2kΩ
23
PW GND
Power GND for power drive stage
25
EQB
30
EQA
Equalizer circuit (this circuit
synchronizes with the BST SW)
・Input impedance
: 1.9Ω (typ.)
0.73
VREF OUT
—
1.8kΩ
100kΩ
32
4
0
30
—
2002-10-30
TA2123AF
Terminal
No.
Name
Function
Terminal
Voltage
(V)
Internal Circuit
20kΩ
PW IN
20kΩ
31
LPF
Low pass filter terminal of bass boost
10kΩ
10kΩ
31
0.73
VREF OUT
33
BST OUT
10kΩ
VREF OUT
Output of boost amplifier
20kΩ
0.73
33
100kΩ
34
BST NF
34
NF of boost amplifier
0.73
VREF OUT
36
DET
Smoothing terminal of boost AGC
circuit
C-AMP
SW
Center amplifier on / off switch
・Output type of power amplifier
OCL type: OPEN
(C-AMP ON)
Output coupling type: GND
(C-AMP OFF)
MT TC
Smoothing terminal of MT SW
In order to reduce a pop noise at
power amplifier on / off switching
OUTC
-
+
+
AGC IN
10kΩ
VREF OUT
35
0.73
—
36
-
35
Input of boost AGC circuit
・The input level to the boost
amplifier is controlled by the input
level of this terminal.
・Input impedance: 10kΩ (typ.)
—
38
10µA
37
+
38
Center amplifier
0.7
-
37
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2002-10-30
TA2123AF
No.
Name
Function
39
BEEP
Input of beep signal
・This terminal receives beep
signal of a microcomputer etc.
・This terminal should be set as
high impedance or “H” when
not using this function
41
MT SW
Muting switch of power amplifier
Power amp. on: “H” level
Power amp. off: “L” level
Refer to application note 3 (2)
44
F / R SW
Forward / reverse switch
Forward: “L” level
Reverse: “H” level
Refer to application note 3 (2)
PRE SW
Muting switch of preamplifier
Preamp. on: “L” level
Preamp. off: “H” level
Refer to application note 3 (2)
PW SW
Power on / off switch
IC on: “H” level
IC off: “L” level
Refer to application note 3 (2)
43
BST SW
Boost on / off switch
BST on: OPEN / “H” level
BST off: “L” level
Refer to application note 3 (2)
46
M / N SW
Metal / normal mode switch
Metal mode: OPEN / “H” level
Normal mode: “L” level
Refer to application note 3 (2)
47
PRE GND
Power GND for power drive stage
45
42
Internal Circuit
39
Power amplifier
20kΩ
Terminal
Voltage
(V)
0.7
—
41
47kΩ
—
—
42
47kΩ
Terminal
43
46
20kΩ
—
10kΩ
—
—
6
—
0
2002-10-30
TA2123AF
Application Note
VO (PRE) = VREF OUT-∆V × (R2 / R1 + 1)
+
⊿V = 28.6mV
−
R1
R2
VREF OUT
Fig.1
·
VREF OUT = 0.73V (typ.)
·
∆V is an offset voltage which is designed to 28.6mV.
+−
1. Preamplifier stage
(1) Output DC voltage of preamplifier
Output DC voltage of preamplifier is determined
by external resistors R1 and R2 as shown in Fig.1.
Output DC voltage of preamplifier
It is as follows in case that the DC voltage is calculated by the constant of a test circuit.
VO (PRE) = 0.73V-28.6mV (200kΩ / 22kΩ + 1)
=0.44V
Output DC voltage of preamplifier should be fixed about VCC / 2, because preamplifier get a enough
dynamic range.
(2) AMS (automatic music sensor) function
A block diagram is shown in Fig.2. This function can AMS (automatic music sensor) and BS (blank skip).
· The comparator input level is higher than comparator sensitivity.
→Rectangle wave is outputted.
·
The comparator input level is lower than comparator sensitivity.
→High level is outputted.
The sensitivity changeover is determined by AMS switch (the comparator sensitivity doesn’t change.).
· Automatic music sensor mode
The AMS SW is also turned on when the MT SW is turned on. And the comparator input level is
determined by external resistors (R4~R6) and capacitors (C3, C4) from mixer amplifier output
level.
The transfer function is as follows.
VO / Vi = R3 / [R1･R2 / (R1 + R2)] × {jωC4･R5･R6 / [R4･R5 + jω (C3･R4･R5 + C4･R4･R5 +
C4･R4･R6 + C4･R5･R6) - ω2C3･C4･R4･R5･R6]}
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2002-10-30
TA2123AF
Blank skip mode
The AMS SW is also turned of when the MT SW is turned off. And the comparator input level is
determined by external resistors (R4, R6) and capacitors (C3, C4) from mixer amplifier output
level.
The transfer function is as follows.
VO / Vi = R3 / [R1･R2 / (R1 + R2)] × {jωC4･R6 / [1 + jω (C3･R4 + C4･R4 + C4･R6) - ω2C3･C4･
R4･R6]}
VREF OUT
VREF OUT
Synchronizes with the MT SW
+
MIX
−
14
AMS
MIX
R3
13
R4
C2 R2
15
AMS AMS
SW DET
C4
R6
PRE OUT
12
AMS
IN
R5
C1 R1
COMP
C3
·
40
AMS
OUT
VCC
R7
VREF OUT
Fig.2
AMS system
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2002-10-30
TA2123AF
2. Power amplifier stage
(1) Input of power amplifier
Each input signal should be applied through a capacitor. In case that DC current or DC voltage is applied
to each amplifier, the internal circuit has unbalance and the each amplifier doesn’t operate normally.
It is advised that input signal refer to VREF voltage, in order to reduce a pop noise or low frequency leak.
(2) Output application
This IC can chose the output coupling type and OCL type. The C-AMP SW should be connected to GND
in case that the output coupling type is chosen. The supply current decreases when not using the bass
boost function.
(3) Bass boost function
(a) System
This IC has the bass boost function in power amplifier stage. After this system adds the low frequency
ingredient of side amplifier, it is applied into the center amplifier. And the bass boost level is controlled
by the variable impedance circuit (Fig.3)
· Flow of the bass boost signal
Variable impedance circuit→Boost amplifier→Center amplifier
·
Flow of the bass boost level
Output of center amplifier→AGC DET (level detection) →
Variable impedance circuit operation
The system of treble boost function is realized by frequency characteristic adjustment of the side
amplifier.
PW A
20
RL
28
BST
C1
Ra
RL
PW B
ATT
31
Rd
33
C4
21
22
32
C3
Ra
PW C
Flow of the bass boost signal
36
+
AGC
DET
Rc
- +
R1 C2
34
35
−
C6
27
Flow of the Bass boost level
C5 Rb
Fig.3
Bass boost system
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2002-10-30
TA2123AF
ATT
R4 = 20kΩ
BST
G1(ω)
LPF
A1
Fig.4
C4
32
20
PW C
21
RL
PW A
R2 = 100kΩ
C2 R3
34
33
R5
31
20kΩ
2R1
2R1
20kΩ
+ −
27
20kΩ
C1
28
C3
(b) AGC circuit
The AGC circuit of bass boost function is realized by the variable impedance circuit. The AGC DET
circuit detects the low frequency level of center amplifier. When this level becomes high, the variable
impedance circuit operates, and this circuit attenuates the input level of center amplifier.
The AGC DET circuit is the current input, so that the output voltage of ADD amplifier is changed into
the current ingredient by resistor Rb and capacitor C5 which are shown in Fig.3. And it is smoothed
and detected by DET circuit (pin 36). And the direct current should not be applied to the AGC IN
circuit, because, as for the circuit, the sensitivity setup is high.
Moreover, the AGC signal level is decreased in case that the resistor R5 is connected with the
capacitor C5 in series. And the AGC point can be changed. But the center amplifier is clipped in the
low frequency in case that the resistor R5 is larger.
(c) Bass boost
The signal flow of bass boost function is as follows, refer to Fig.4.
LPF (internal resistors 2R1 and external capacitor C1)
→ATT (variable impedance circuit)
→HPF (BST amplifier)
→BPF (LPF: internal resistor R4 and external capacitor C3, HPF: external capacitor C4 and internal
resistor R5)
→Center amplifier
The center amplifier signal becomes the reverse phase, because the phase of audio frequency range
is reversed with two LPFs.
G2(ω)
G3(ω)
HPF
BPF
A2
Block diagram of bass boost
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2002-10-30
TA2123AF
The transfer function of bass boost is as follows from Fig.4.
G (ω) = G1 (ω)･A1･G2 (ω)･G3 (ω)･A2
The bass boost effect is changed by external resistor or external capacitor. The transfer function and cut
off frequency are as follows.
(1) Transfer function of LPF
G1 (ω) = 1 / (1 + jωC1･R1)
fL = 1 / 2πC1･R1
(2) Transfer function of BPF
G3 (ω) = jωC4･R5 / [1 + jω (R4･C3 + R5･C3 + C4･R4) - ω2 R4･C3･R5･C4]
fO = 1 / 2p R4 × C3 × R5 × C4
(3) HPF gain and cut off frequency
G2 (ω) = 1 + R2 / (R3 + 1 / jωC2)
fHC = 1 / (2 F R3･C2)
30
HPF
Response (dB)
20
A
Ra
Ca
Fig.5
Total characteristic
10
0
fL
LPF
−10
Rb
BPF
fO
−20
Cb
−30
3
BPF
10
100
Frequency f
300
(Hz)
Graph.1 Characteristic of bass boost
(4) fO and fL
The fL and fO should be set up out of the audio frequency range. In case that the fO and fL is inside
of audio frequency range and AGC circuit operates, the voltage gain decrease.
(5) HPF
The fHC should be made 1 / 2 or less frequency as compared with the fL or fO. The phase difference
is large near the fHC, so that the bass boost level runs short. And the HPF gain of middle or high
frequency range should be set to 10dB or more.
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2002-10-30
TA2123AF
(4) Treble boost
The EQ terminal is synchronizes with the BST SW, and the input impedance is changed.
BST OFF: 100kΩ (typ.)
BST ON: 1.9kΩ (typ.)
The voltage gain increase 6 dB (typ.) at high frequency range in case that the capacitor CX is connected
between the EQ terminal and the PW NF terminal.
PW IN 28
PWA / B
29
CX
PW NF
+
−
EQ
Fig.6
30
Treble boost
(5) Cross talk of output coupling type
In case of output coupling mode, the cross talk is determined by resistor RL and capacitor C which are
connected with power amplifier output as shown in Fig.7.
The formula is shown below.
G (ω) = 1 / 2 [1 + jωC (RL / 2)]
CT = 20ℓog|Gv| = 20ℓog [1 / 2 [ 1 + (w / w0 )2 ]], ω0 = 1 / C (RL / 2)
At f = 1kHz, C1 = 220µF, RL = 32Ω, The cross talk becomes about 33 dB.
VREF
PW A
~
+
−
C
RL
+
C
RL
RL
RL
−
PW C
R2
PW B
Fig.7
Cross talk of output coupling type
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2002-10-30
TA2123AF
3. Total
(1) Ripple filter
It is necessary to connect a low saturation transistor (2SA1362 etc.) for ripple filter, because this IC
doesn’t have transistor for ripple filter. Care should be taken to stabilize the ripple filter circuit, because
the ripple filter circuit supplies internal circuit except power drive stage with power source.
(2) Switch terminal
(a) PW SW
It is necessary to connect an external pull-down resistor with terminal PW SW, in case that this IC is
turned on due to external noise etc. (The PW SW sensitivity is designed highly.)
(b) MT SW, BST SW, F / R SW, PRE SW, M / N SW
The current flows through terminals of MT SW, BST SW, PRE SW and M / N SW, in case that these
terminals are connected with VCC line independently, even though the PW SW is off-mode. It is
necessary to connect an external pull-down resistor with each terminals in case that IC is turned on
due to external noise etc. These switches are designed highly.)
· The pop noise at turning on / off MT SW can be reduced by the external capacitor of the MT TC
terminal.
(c) C-AMP SW
The C-AMP SW terminal should not be connected with high voltage of VCC etc., because internal
circuit is broken.
(d) Sensitivity voltage of each switch (Ta = 25°C)
(1) MT SW,F / R SW,PRE SW,PW SW
(2) BST SW,M / N SW
2.5
2.5
(V)
2.2V
2
Terminal voltage V43,V46
Terminal voltage V41, V44, V45, V42
(V)
2.2V
H
1.5
1
0.8V
0.5
2
H
1.5
1
0.8V
0.5
0.3V
0.3V
L
0
1
L
1.5
Supply voltage
2
2.5
0
1
(V)
1.5
Supply voltage
MT SW (V41) F / R SW (V44) PRE SW (V45)
PW SW (V42)
2
2.5
(V)
BST SW (V43)
M / N SW (V46)
'H'
Muting OFF
REV mode
Preamp. OFF
IC ON
'H', open
BST ON
Metal mode
'L'
Muting ON
FWD mode
Preamp. ON
IC OFF
'L'
BST OFF
Normal mode
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2002-10-30
TA2123AF
(3) Capacitor
Small temperature coefficient and excellent frequency characteristic is needed by capacitor below.
· Oscillation preventing capacitors for power amplifier output
·
Capacitor between VREF and GND
·
Capacitor between VCC and GND
·
Capacitor between RF OUT and GND
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VCC
4.5
V
Output current (PW AMP.)
IO (peak)
100
mA
Power dissipation
PD
750
mW
Supply voltage
(Note)
Operating temperature
Topr
-25~75
°C
Storage temperature
Tstg
-55~150
°C
Note: Derated above Ta = 25°C in proportion of 6mW / °C
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2002-10-30
TA2123AF
Electrical Characteristics
Unless Otherwise Specified: VCC = 1.3V, Ta = 25°C, f = 1kHz, SW1: b, SW2: b, SW3: a,
SW4: OPEN SW5: a, SW6: a, SW7: ON, SW8: a / b, SW9: b,
SW10: ON
Preamplifier: Normal Mode, Rg = 2.2kΩ, RL = 10kΩ, SW1: a
Power Amplifier: Rg 600Ω, RL = 32Ω, SW2: a
Symbol
Test
Circuit
Quiescent supply current 1
ICCQ1
—
Quiescent supply current 2
ICCQ2
Quiescent supply current 3
Quiescent supply current 4
Preamp. stage
Characteristic
Min.
Typ.
Max.
OCL mode, PRE + PW
—
2.2
4.0
—
OCL mode, PRE: OFF
SW9: a
—
1.7
3.0
ICCQ3
—
Coupling mode
PRE + PW, SW4: ON
—
1.5
2.7
ICCQ4
—
Coupling mode
PRE : OFF, SW4: ON
SW9: a
—
1.0
1.8
Open loop voltage gain
GVO
—
Vo = -22dBV
NF resistor (150Ω): Short
65
80
—
Closed loop voltage gain
GVC
—
Vo = -22dBV
—
35
—
Maximum output voltage
Vom1
—
THD = 1%
160
250
—
mVrms
Total harmonic distortion
THD1
—
VCC = 1V, Vo = -22dBV
—
0.08
0.3
%
Rg = 2.2kΩ
BPF: 20Hz~20kHz
NAB (GV = 35dB, f = 1kHz)
SW1: b
—
1.7
2.7
µVrms
—
60
—
—
62
—
Equivalent input noise
voltage
Vni
—
Cross talk (CH-A / CH-B)
CT1
—
Test Condition
Vo = -22dBV
Unit
mA
dB
Cross talk
(forward / reverse)
CT2
—
Ripple rejection ratio
RR1
—
fr = 100Hz, Vr = -32dBV
BPF = 100Hz
—
54
—
Preamplifier muting
attenuation
ATT1
—
Vo = -22dBV
SW9: b→a
—
84
—
Driver on resistance
R1
—
IL = 100µA, SW10: OPEN
—
90
—
AMS sensitivity 1
AMS1
—
SW5: b
-58.3
-56.3
-54.3
AMS sensitivity 2
AMS2
—
SW5: a
-69.7
-67.7
-65.7
Forward mode on voltage
V44
—
0
—
0.3
V
Reverse mode on current
I44
—
5
—
—
µA
Preamplifier on voltage
V45
—
0
—
0.3
V
Preamplifier off current
I45
—
5
—
—
µA
Metal mode on voltage
V46 (M)
—
0.8
—
0.95
V
Normal mode on voltage
V46 (N)
—
0
—
0.3
V
VCC = 0.95V
15
dB
Ω
dBV
2002-10-30
TA2123AF
Symbol
Test
Circuit
Voltage gain 1
GV1
—
Channel balance
CB
—
Boost amp. stage
Power amp. stage
Characteristic
Test Condition
Vo = -22dBV
Min.
Typ.
Max.
—
24
—
-1.5
0
+1.5
28
30
32
Unit
dB
Voltage gain 2
GV2
—
Vin (A) = Vin (B) = -Vin (C)
Vo = -22dBV
Output power
Po
—
VCC = 1.5V
THD (A) = THD (B) = 10%
3
6
—
mW
Total harmonic
distortion
THD
—
Po = 1mW
—
0.1
0.8
%
Output noise voltage
Vno
—
Rg = 600Ω, SW2: b
BPF = 20Hz~20kHz
—
40
80
µVrms
Cross talk
CT3
—
Vo = -22dBV
34
43
—
Ripple rejection ratio
RR2
—
VCC = 1V, fr = 100Hz
Vr = -32dBV, BPF = 100Hz
—
70
—
Power amplifier muting
attenuation
ATT2
—
Vo = -22dBV
SW5: a→b
—
72
—
Beep signal input
sensitivity
SEN
—
Vo = -62dBV, SW5: OPEN
0.7
1.3
2.2
Voltage gain 3
GV3
—
f = 40Hz, Vin = -64dBV
SW7: Open
Monitor: C-AMP. -GND
41
44
47
27.5
30.5
33.5
dB
µAp-p
dB
Voltage gain 4
GV4
—
f = 40Hz, Vin = -47dBV
SW7: Open
Monitor: C-AMP. -GND
Maximum output
voltage
Vom2
—
f = 40Hz, THD = 1%
SW3: b, SW7: Open
—
86
—
mVrms
Muting attenuation
ATT3
—
f = 40Hz, Vo = -32dBV
SW7: Open→on
—
53
—
dB
R2
—
IL = 100µA, SW7: Open
—
1.9
—
kΩ
Ripple filter output voltage
VRF OUT
—
VCC = 1V, IRF = 20mA
0.89
0.92
—
V
Ripple filter ripple rejection
ratio
RR3
—
VCC = 1V, IRF = 20mA
BPF = 100Hz, fr = 100Hz
Vr = -32dBV
35
42
—
dB
Power amplifier on current
I41
—
5
—
—
µA
Power amplifier off voltage
V41
—
0
—
0.3
V
Power on curent
I42
—
5
—
—
µA
Power off voltage
V42
—
0
—
0.3
V
Boost on voltage
V43 (ON)
—
0.8
—
0.95
V
Boost off voltage
V43 (OFF)
—
0
—
0.3
V
Equalizer on resistance
VCC = 0.95V
16
2002-10-30
TA2123AF
Test Circuit (preamplifier stage)
25
RF IN
24
VCC
19
BASE
18
F / R SW
RF OUT
17
45
PRE SW
GND
16
46
M / N SW
AMS DET
15
47
PRE GND
AMS MIX
14
48
VREF IN
AMS SW
13
a
RF OUT
SW5
b
VCC
a
SW6 b
AMS OUT
41
MT SW
42
PW SW
PRE NFB
5
6
7
8
9
10
11
PRE
OUTA
17
−
−
10µF
22kΩ
2.7kΩ
7.5kΩ
0.22µF ~
22kΩ
−
10kΩ
150Ω 33µF
0.022µF
1.8kΩ
1.8kΩ
1µF
10kΩ
6.8kΩ +
VREF OUT
1µF
−
22kΩ
+
−
22µF
SW1
a1 a2
a3
− +
~ 4.7µF b a4
+ 6.8kΩ
12
200kΩ
2.2kΩ
200kΩ
+
22kΩ
PRE OUTB
4
2SA1362−Y
RF OUT
10kΩ
MTL DRVB
3
AMS IN
MTL DRVA
2
0.033µF
PRE OUTA
1
1000µF × 4
2.2kΩ × 4
2.2kΩ
0.033µF
PRE NFA
+
0.022µF
−
SW10
150Ω 33µF
b
INA−R
b
a
INB−R
44
VREF OUT
a
2.2µF
VCC
+
TA2123AF
INB−F
SW9
Rg = 600Ω
RF OUT
SW8
40
Rg = 600Ω
18kΩ
INA−F
VCC
4.7µF
+ −
0.1µF
37
4.7µF
36
PRE
OUTB
2002-10-30
TA2123AF
0.012µF
OUTB
22
OUTC
21
OUTA
20
VCC
19
BASE
18
RF OUT
17
GND
16
MT SW
BST SW
47
PRE GND
48
VREF IN
1
OUTA
1.5Ω
VCC
0.47µF
+
2SA1362−Y
RF OUT
+
13
12
3
Output circut of output coupling type
OUTB
22
OUTC
21
OUTA
20
OUTB
1.5Ω
0.47µF
4.7Ω
1.5Ω
0.47µF
18
+
−
43
TA2123AF
0.47µF
OUTC
OUTC
OUTA
220µF
PW SW
0.47µF
1.5Ω
32Ω 32Ω
42
OUTB
1.5Ω
32Ω
23
−
PW GND
4.7µF
+ −
32Ω
EQB
24
47µF
PW NFB
RF IN
−
25
PW INB
1µF
26
10µF
600Ω
600Ω
Rg = 600Ω
27
PW INA
1µF
28
PW NFA
0.15µF
0.012µF
Rg = 600Ω
29
EQA
BST NF
30
VREF OUT
+ −
2.2µF
SW7
a
b b SW2B
− +
VCC
a
SW6
b
41
a
SW2A
VREF OUT
BEEP
22µF
a
RF OUT
SW5 b
~
SW3B
32
31
+
39
~
LPF
AGC IN
37 C−AMP SW
b
a a
BST OUT
34
~
0.33µF
100kΩ
0.1µF
4.7µF 2kΩ
− +
35
SW4
4.7µF
38 MT TC
−
b
SW3A
33
36
DET
2.2µF
+ −
OUTC
PW INC
20kΩ
0.33µF 0.33µF
BST OUT
Rg = 600Ω
Test Circuit (power amplifier stage)
2002-10-30
TA2123AF
Package Dimensions
Weight: 0.17g (typ.)
19
2002-10-30
TA2123AF
RESTRICTIONS ON PRODUCT USE
000707EBA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
20
2002-10-30