TLP227G,TLP227G−2 TOSHIBA Photocoupler Photo Relay TLP227G,TLP227G−2 Cordless Telephone PBX Modem Unit in mm The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a plastic DIP package. The TLP227G series are a bi−directional switch which can replace mechanical relays in many applications. • TLP227G: 4 pin DIP(DIP4),1 channel type(1 form A) • TLP227G−2: 8 pin DIP(DIP8),2 channel type(2 form A) • Peak off−state voltage: 350V(min.) • Trigger LED current: 3mA(max.) • On−state current: 120mA(max.) • On−state resistance: 35Ω(max.) • Isolation voltage: 2500Vrms (min.) • Isolation thickness: 0.4mm(min.) Weight: 0.26g • BSI approved: BS EN60065: 2002, certificate no.8275 1 Form A TOSHIBA 11−5B2 4 3 1 2 BS EN60950-1: 2002, certificate no.8276 • Option(D4) type TUV approved: DIN EN 60747-5-2, certificate no. 40011913 Pin Configuration (top view) TLP227G-2 TLP227G 1 4 2 3 1: Anode 2: Cathode 3: Drain 1 4: Drain 2 1 8 2 7 1, 3: Anode 2, 4: Cathode 5: Drain 1 3 6 6: Drain 2 7: Drain 3 8: Drain 4 4 TOSHIBA 11−10C4 Weight: 0.54g 2 Form A 8 5 1 4 5 1 2007-10-01 TLP227G,TLP227G−2 Internal Circuit (TLP227G) 1 4 2 3 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA Forward current ΔIF / °C −0.5 mA / °C Peak forward current(100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C 350 V LED Forward current derating(Ta ≥ 25°C) Off-state output terminal voltage VOFF TLP227G Detector On-state current On-state current derating(Ta ≥ 25°C) TLP227G−2 120 ION One channel Both channel 120 100 (Note 1) −1.2 TLP227G TLP227G−2 mA −1.2 ΔION / °C One channel Both channel mA / °C −1.0 (Note 1) Tj 125 °C Storage temperature range Junction temperature Tstg −55~125 °C Operating temperature range Topr −40~85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 2500 Vrms Isolation voltage (AC,1 min., R.H.≤ 60%) (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Two channels operating simultaneously. (Note 2): Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Supply voltage VDD Forward current IF On-state current Operating temperature Unit ― ― 280 V 5 7.5 25 mA ION ― ― 100 mA Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP227G,TLP227G−2 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF=10mA 1.0 1.15 1.3 V Reverse current IR VR=5V ― ― 10 μA Capacitance CT V=0,f=1MHz ― 30 ― pF Off−state current IOFF VOFF=350V ― — 1 μA Capacitance COFF V=0,f=1MHz ― 40 ― pF Min. Typ. Max. Unit ION=120mA ― 2 3 mA ION=120mA,IF=5mA ― 22 35 ― 26 40 Min. Typ. Max. Unit ― 0.8 ― pF ― Ω Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Trigger LED current IFT On−state resistance RON Test Condition ION=20~120mA, IF=5mA Ω Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance Test Condition VS=0,=1MHz RS VS=500V,R.H.≤ 60% 5×10 AC,1 minute Isolation voltage BVS 10 10 14 2500 ― ― AC,1 second(in oil) ― 5000 ― DC,1 minute(in oil) ― 5000 ― Vdc Min. Typ. Max. Unit Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Turn−on time tON RL=200Ω ― 0.3 1 Turn−off time tOFF VDD=20V,IF=5mA ― 0.1 1 ms Switching Time Test Circuit TLP227G IF 1 4 2 3 RL VDD IF VOUT 90% VOUT tON 3 10% tOFF 2007-10-01 TLP227G,TLP227G−2 IF – Ta ION – Ta 100 140 (mA) On-state current ION Allowable forward current IF (mA) 120 80 60 40 20 100 80 60 40 20 0 －20 0 20 60 40 80 100 0 －20 120 0 20 Ambient temperature Ta (°C) Ta = 25°C 50 (mA) 30 1000 10 500 Forward current IF Allowable pulse forward current IFP (mA) 100 IF –VF 100 Pulse width ≤ 100μs Ta = 25°C 3000 80 60 Ambient temperature Ta (°C) IFP – DR 5000 40 300 100 50 30 10 3 5 3 1 0.5 0.3 10－ 3 10－ 3 2 10 3 Duty cycle ratio －1 10 3 0.1 0.6 0 0.8 DR 1.0 1.2 1.4 Forward voltage VF ΔVF / ΔTa – IF 1.6 1.8 2.6 3.0 (V) IFP – VFP 1000 500 Pulse forward current IFP (mA) Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) －2.8 －2.4 －2.0 －1.6 －1.2 －0.8 300 100 50 30 10 Pulse width ≤ 10μs 5 Repetitive 3 frequency = 100Hz Ta = 25°C －0.4 0.1 0.3 0.5 1 3 Forward current IF 5 10 30 1 0.6 50 (mA) 1.0 1.4 1.8 Pulse forward voltage 4 2.2 VFP (V) 2007-10-01 TLP227G,TLP227G−2 IFT – Ta 3.0 ION – VON 200 ION = Rated (mA) 2.0 On-state current ION Relative trigger LED current IFT / IFT (Ta = 25°C) 2.5 1.5 1.0 0.5 0 －20 0 20 40 60 80 Ta = 25°C IF = 5mA 100 0 －100 －200 －4 100 0 －2 Ambient temperature Ta (°C) On-state voltage VON RON – Ta 60 ION = Rated VOFF = 350V 500 40 30 20 10 (nA) 50 300 Off-state current IOFF On-state resistance RON (Ω) (V) IOFF – Ta 1000 IF = 5mA 0 4 2 100 50 30 10 5 3 －20 0 20 40 60 80 1 －20 100 Ambient temperature Ta (°C) 0 20 40 60 80 100 Ambient temperature Ta (°C) 5 2007-10-01 TLP227G,TLP227G−2 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01