VISHAY SL02-GS18

SL02, SL03, SL04
Vishay Semiconductors
Small Signal Schottky Diodes
Features
•
•
•
•
•
For surface mounted applications
Low-profile package
Ideal for automated placement
Low power loss, high efficiency
High temperature soldering: 260 °C/10 s
at terminals
• Wave and reflow solderable
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17249
Mechanical Data
Case: DO-219AB (SMF)
Polarity: color band denotes cathode end
Weight: approx. 15 mg
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 50 k/box
GS08/3 k per 7" reel (8 mm tape), 30 k/box
Parts Table
Part
Ordering code
Marking
Remarks
SL02
SL02-GS18 or SL02-GS08
S2
Tape and reel
SL03
SL03-GS18 or SL03-GS08
S3
Tape and reel
SL04
SL04-GS18 or SL04-GS08
S4
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Maximum repetitive peak
reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current
Peak forward surge current
8.3 ms single half sine-wave
Document Number 85687
Rev. 1.9, 23-Jul-10
Ttp = 109 °C
Part
Symbol
Value
Unit
SL02
VRRM
20
V
SL03
VRRM
30
V
SL04
VRRM
40
V
SL02
VRMS
14
V
SL03
VRMS
21
V
SL04
VRMS
28
V
SL02
VDC
20
V
SL03
VDC
30
V
SL04
VDC
40
V
IF(AV)
1.1
A
IFSM
40
A
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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SL02, SL03, SL04
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
180
K/W
Maximum operating junction
temperature
Tj
125
°C
Storage temperature range
Tstg
- 55 to 150
°C
Thermal resistance junction to
ambient air
1)
Note:
1)
Mounted on epoxy substrate with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Instaneous forward voltage
Typical instantaneous forward
voltage
Maximum DC reverse current at
rated DC blocking voltage
IF = 0.5 A
1)
Part
Symbol
Typ.
Max
Unit
SL02
VF
Min
0.360
0.385
V
SL03
VF
0.395
0.43
V
0.51
SL04
VF
0.450
SL02
VF
0.420
V
IF = 1.1 A
SL03
VF
0.450
V
SL04
VF
0.530
TA = 25 °C
SL02
IR
TA = 100 °C
SL02
TA = 25 °C
V
V
250
μA
IR
8
mA
SL03
IR
130
μA
TA = 100 °C
SL03
IR
6
mA
TA = 25 °C
SL04
IR
20
μA
TA = 100 °C
SL04
IR
6
mA
Note:
1)
Pulse test: 300 µs pulse width, 1 % duty cycle
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2
For technical questions within your region, please contact one of the following: Document Number 85687
[email protected], [email protected], [email protected]
Rev. 1.9, 23-Jul-10
SL02, SL03, SL04
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
10 000
Instantaneous Reverse Current (µA)
Average Forward Current (A)
1.5
1.0
0.5
Tj = 100 °C
Tj = 50 °C
100
Tj = 25 °C
10
0
1
0 10
30
17379
50
70
90
110 130 150
5
25
15
20
10
Reverse Voltage (V)
Figure 4. Typical Reverse Current Characteristics - SL02
10
Instantaneous Forward Current (A)
250
Junction Capacitance (pF)
0
17382
Lead Temperature (°C)
Figure 1. Forward Current Derating Curve
200
150
100
SL02
50
SL04
Tj = 100 °C
1
Tj = 75 °C
0.1
Tj = 50 °C
0.01
Tj = 25 °C
0.001
Pulse width = 300 µs
1 % duty cycle
0.0001
10
0
2
17380
8
6
4
Reverse Voltage (V)
10
0
12
Figure 2. Typical Junction Capacitance
17383
0.8
0.6
1.0
0.4
0.2
Instantaneous Forward Voltage (V)
Figure 5. Typical Instantaneous Forward Characteristics - SL03
10 000
Tj = 100 °C
1
Tj = 75 °C
0.1
Tj = 50 °C
0.01
Tj = 25 °C
0.001
Pulse width = 300 µs
1 % duty cycle
Instantaneous Reverse Current (µA)
10
Instantaneous Forward Current (A)
Tj = 75 °C
1000
Tj = 100 °C
1000
Tj = 75 °C
100
Tj = 50 °C
10
Tj = 25 °C
1
0.1
0.0001
0
17381
0.8
0.2
1.0
0.4
0.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characterisics - SL02
Document Number 85687
Rev. 1.9, 23-Jul-10
0
17384
5
10 15
20 25
Reverse Voltage (V)
30
35
Figure 6. Typical Reverse Current Characteristics - SL03
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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SL02, SL03, SL04
Vishay Semiconductors
Package Dimensions in millimeters (inches): DO-219AB
0.85 (0.033)
0 (0.000)
0.1 (0.004)
5
5
0.05 (0.002)
Detail Z
enlarged
1.2 (0.047)
0.8 (0.031)
0.25 (0.010)
1.9 (0.075)
1.7 (0.067)
0.35 (0.014)
1.08 (0.043)
2.9 (0.114)
0.88 (0.035)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051)
1.4 (0.055)
1.3 (0.051)
2.9 (0.114)
17247
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For technical questions within your region, please contact one of the following: Document Number 85687
[email protected], [email protected], [email protected]
Rev. 1.9, 23-Jul-10
SL02, SL03, SL04
Vishay Semiconductors
Blistertape Dimensions for SMF in millimeters
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Document Number 85687
Rev. 1.9, 23-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
DO219-AB (SMF)
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches)
0.85 (0.033)
0 (0.000)
0.1 (0.004)
5
5
0.05 (0.002)
1.7 (0.067)
Detail Z
enlarged
1.2 (0.047)
0.8 (0.031)
0.25 (0.010)
1.9 (0.075)
0.35 (0.014)
1.08 (0.043)
2.9 (0.114)
0.88 (0.035)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
1.3 (0.051)
1.4 (0.055)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
2.9 (0.114)
17247
Rev. 1.3, 27-Mar-07
1
Document Number: 84023
For technical questions, contact: [email protected]
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Document Number: 91000
Revision: 11-Mar-11
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