MMBZ6V8DC/A thru MMBZ27VDC/A Vishay Semiconductors New Product formerly General Semiconductor Dual Zener Transient Voltage Suppressor Diodes for ESD Protection TO-236AB (SOT-23) .122 (3.1) .110 (2.8) Mounting Pad Layout .016 (0.4) Top View 0.031 (0.8) .056 (1.43) .052 (1.33) 3 0.079 (2.0) 2 .016 (0.4) .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95) Dimensions in inches and (millimeters) Marking: MMBZ15VDC = TC5 MMBZ27VDC = TC7 MMBZ6V8DC = ? .102 (2.6) .094 (2.4) .016 (0.4) MMBZ15VDC MMBZ27VDC MMBZ15VDA MMBZ27VDA Common Cathode • Dual Silicon Planar Zener Diodes with Common Cathode or Common Anode configurations. • Dual package provides for Bidirectional or separate unidirectional configurations. • The dual configurations protect two separate lines with only one device. • Peak Power: 40 watts @1ms (Bidirectional) . • High temperature Soldering Guaranteed: 230˚C for 10 seconds. • Ideal for ESD Protection. • For bidirectional operation, circuit connected to pins 1 and 2. For unidirectional operation, circuit connected to pins 1 and 3 or pins 2 and 3. Common Anode Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Terminals: Solderable per MIL-STD-750, method 2026 Packaging Codes/Options: E8/10K per 13” reel (8mm tape) E9/3K per 7” reel (8mm tape) Maximum Ratings and Thermal Characteristics Parameter Symbol Peak Power Dissipation @ TA≤ 25˚C MMBZ15VDA = TA5 MMBZ27VDA = TA7 MMBZ6V8DA = ? Features Top View (1) 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) 1 0.035 (0.9) (TA = 25°C unless otherwise noted) Value Ppk 40 (4) Unit W Total Power Dissipation on FR-5 Board(2) at TA = 25°C Derate above 25˚C PD 225 1.8 mW mW/˚C Total Power Dissipation on Alumina Substrate(3) at TA = 25°C Derate above 25˚C PD 300 2.4 mW mW/˚C Thermal Resistance Junction to Ambient Air RΘJA 556 °C/W Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C Notes: (1) Nonrepetitive current pulse per Figure 2 and derate above TA = 25°C per Figure 3. (2) FR-5 = 1.0 x 0.75 x 0.62 in. (3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina. (4) The MMBZ6V8DC/A is rated at 24V Document Number 88358 21-May-02 www.vishay.com 1 MMBZ6V8DC/A thru MMBZ27VDC/A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TJ = 25°C unless otherwise noted) Breakdown Voltage VBR (Volts)(1) Max Forward Max Reverse Working Voltage Voltage Peak Max Max (2) @ IRSM Max Reverse Reverse Reverse (Clamping Voltage) Temperature Voltage Leakage Surge VC @IF Coefficient of VF VRWM Current IR Current IPP (Volts) VBR (mV/°C) (Volts) (mA) (Volts) (nA) (Amps) Min Nom Max @IT mA MMBZ6V8D 6.48 6.8 7.14 1.0 4.5 500 2.5 9.6 3.4 1.1 200 MMBZ15VD 14.30 15.00 15.80 1.0 12.8 100 1.9 21.2 16 0.9 200 MMBZ27VD 25.65 27.00 28.35 1.0 22.0 80 1.0 38.0 30 1.1 200 Type Notes: (1) VBR measured at pulse test current IT at an ambient temperature of 25°C (2) Surge current waveform per Figure 2 and derate per Figure 3 Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) FIG. 1 - STEADY STATE POWER DERATING CURVE Layout for RΘJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in. (0.3mm) 300 0.30 (7.5) 0.12 (3) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) PD, POWER DISSIPATION (mW) 250 ALUMINA SUBSTRATE 200 150 FR-5 BOARD 100 0.03 (0.8) 50 0.47 (12) 0 0.2 (5) 0 75 50 25 100 125 150 175 T, Temperature (°C) 0.06 (1.5) Dimensions in inches (millimeters) 0.20 (5.1) FIG. 2 - PULSE WAVEFORM PULSE WIDTH (tp) is DEFINED as that POINT WHERE the PEAK CURRENT DECAYS to 50% of IRSM tr≤10µs tr PEAK VALUE – IRSM VALUE(%) 100 HALF VALUE – IRSM 2 50 tp 0 0 1 2 3 t, TIME (ms) www.vishay.com 2 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA=25Z(°C) FIG. 3 - PULSE DERATING CURVE 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Document Number 88358 21-May-02