COMCHIP MMBT2222A-G

Small Signal Transistor (NPN)
MMBT2222A-G (RoHS Device)
Features
NPN Silicon Epitaxial Planar Transistor for
Switching and amplifier application.
Mechanical Data
SOT-23
Case: SOT-23 Plastic Package
Weight approx: 0.008g
.122 (3.1)
.110 (2.8)
Top View
.016 (0.40)
Mounting Pad Layout
C
.056 (1.43)
.052 (1.33)
0.035 (0.9)
0.037 (0.95)
.016(0.4)
.045 (1.15)
.037 (0.95)
.037 (0.95) .037 (0.95)
.007 (0.175)
.005 (0.125)
0.079 (2.0)
0.037 (0.95)
B: Base
C: Collector
E: Emitter
E
.004 (0.1) max.
B
.103 (2.6)
.086 (2.2)
.004 (0.1)
Dimensions in inches (millimeters)
Maximum Ratings & Thermal Characteristics Rating at 25ºC ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
IC
600
mA
Collector Current
(1)
Power Dissipation
on FR-5 Board TA=25ºC
Derate above 25ºC
Ptot
225
1.9
mmW
mW/ºC
Power Dissipation
on Alumina Substrate(2) TA=25ºC
Derate above 25ºC
Ptot
300
2.4
mW
mW/ºC
R JA
556
417
ºC/mW
Junction Temperature
Tj
150
ºC
Storage Temperature Range
Ts
-55 to +150
ºC
Thermal Resistance Junction
to Ambient Air
Notes:
FR-5 Board
Alumina Substrate
(1) FR-5=1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x0.024 in. 99.5% alumina.
“-G” suffix designated RoHS compliant version
Small Signal Transistor (NPN)
MMBT2222A-G (RoHS Device)
Electrical Characteristics (T
= 25°C unless otherwise noted)
Parameter
Symbol
J
Test Condition
Min
Typ
Max
VCE = 10 V, IC = 0.1 mA
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 10 mA
TA = -55°C
VCE = 10 V, IC = 150 mA(1)
VCE = 10 V, IC = 500 mA(1)
VCE = 1.0 V, IC = 150 mA(1)
35
50
75
—
—
—
—
—
—
35
—
—
100
40
50
—
—
—
300
—
—
V(BR)CBO
IC = 10 μA, IE = 0
75
—
—
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA, IB = 0
40
—
—
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IC = 10 μA, IC = 0
6.0
—
—
V
Collector-Emitter Saturation Voltage(1)
VCEsat
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
—
—
—
—
0.3
1.0
V
Base-Emitter Saturation Voltage(1)
VBEsat
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.6
—
—
—
1.2
2.0
V
Collector Cut-off Current
ICEX
VEB = 3 V, VCE = 60 V
—
—
10
nA
—
10
nA
ICBO
VCB = 60 V, IE = 0
VCB = 50 V, IE = 0 V
TA = 125°C
—
Collector Cut-off Current
—
—
10
μA
IBL
VEB = 3 V, VCE = 60 V
—
—
20
nA
IEBO
VEB = 3 VDC, IC = 0
—
—
100
nA
fT
VCE = 20 V, IC = 20 mA
f = 100 MHz
300
—
—
MHz
Output Capacitance
Cobo
VCB = 10 V, f = 1 MHz, IE = 0
—
—
8
pF
Input Capacitance
Cibo
VEB = 0.5 V, f = 1 MHz, IC = 0
—
—
25
pF
NF
VCE = 10 V, IC = 100 μA,
RS = 1 kΩ, f = 1 kHz
—
—
4.0
dB
VCE = 10 V, IC = 1 mA
f = 1 kHz
2
—
8.0
VCE = 10 V, IC = 10 mA
f = 1 kHz
0.25
—
1.25
VCE = 10 V, IC = 1 mA,
f = 1 kHz
50
—
300
VCE = 10 V, IC = 10 mA,
f = 1 kHz
75
—
375
VCE = 10 V, IC = 1 mA,
f = 1 kHz
50
75
—
—
300
375
VCE = 10 V, IC = 1 mA,
f = 1 kHz
5.0
—
35
VCE = 10 V, IC = 10 mA,
f = 1 kHz
25
—
200
DC Current Gain
hFE
Collector-Base Breakdown Voltage
(1)
Base Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
Noise Figure
Input Impedance
hie
Small Signal Current Gain
hfe
Voltage Feedback Ratio
hre
Output Admittance
Note:
(1) Pulse Test: Pulse width ≤ 300 μs - Duty cycle ≤ 2%
“-G” suffix designated RoHS compliant version
hoe
Unit
—
kΩ
—
—
μS
Small Signal Transistor (NPN)
MMBT2222A-G (RoHS Device)
Electrical Characteristics
Parameter
(TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
rb’CC
IE = 20 mA, VCB = 20 V,
f = 31.8 MHz
—
—
150
ps
Delay Time (see fig. 1)
td
IB1 = 15 mA, IC = 150 mA,
VCC = 30V, VBE = -0.5 V
—
—
10
ns
Rise Time (see fig. 1)
tr
IB1 = 15 mA, IC = 150 mA,
VCC = 30V, VBE = -0.5 V
—
—
25
ns
Storage Time (see fig. 2)
ts
IB1 = IB2 = 15 mA,
IC = 150 mA, VCC = 30V
—
—
225
ns
Fall Time (see fig. 2)
tf
IB1 = IB2 = 15 mA,
IC = 150 mA, VCC = 30V
—
—
60
ns
Collector Base Time Constant
Switching Time Equivalent Test Circuit
Figure 1. Turn-ON Time
1.0 to 100 μs, DUTY CYCLE ≈ 2%
+30V
200Ω
+16 V
0
C S* < 10 pF
1kΩ
-2 V
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
< 2 ns
Figure 2. Turn-OFF Time
1.0 to 100 μs, DUTY CYCLE ≈ 2%
+30V
200Ω
+16 V
0
C S* < 10 pF
1kΩ
-14 V
< 20 ns
-4 V
“-G” suffix designated RoHS compliant version
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