Small Signal Transistor (NPN) MMBT2222A-G (RoHS Device) Features NPN Silicon Epitaxial Planar Transistor for Switching and amplifier application. Mechanical Data SOT-23 Case: SOT-23 Plastic Package Weight approx: 0.008g .122 (3.1) .110 (2.8) Top View .016 (0.40) Mounting Pad Layout C .056 (1.43) .052 (1.33) 0.035 (0.9) 0.037 (0.95) .016(0.4) .045 (1.15) .037 (0.95) .037 (0.95) .037 (0.95) .007 (0.175) .005 (0.125) 0.079 (2.0) 0.037 (0.95) B: Base C: Collector E: Emitter E .004 (0.1) max. B .103 (2.6) .086 (2.2) .004 (0.1) Dimensions in inches (millimeters) Maximum Ratings & Thermal Characteristics Rating at 25ºC ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 600 mA Collector Current (1) Power Dissipation on FR-5 Board TA=25ºC Derate above 25ºC Ptot 225 1.9 mmW mW/ºC Power Dissipation on Alumina Substrate(2) TA=25ºC Derate above 25ºC Ptot 300 2.4 mW mW/ºC R JA 556 417 ºC/mW Junction Temperature Tj 150 ºC Storage Temperature Range Ts -55 to +150 ºC Thermal Resistance Junction to Ambient Air Notes: FR-5 Board Alumina Substrate (1) FR-5=1.0 x 0.75 x 0.062 in. (2) Alumina = 0.4 x 0.3 x0.024 in. 99.5% alumina. “-G” suffix designated RoHS compliant version Small Signal Transistor (NPN) MMBT2222A-G (RoHS Device) Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol J Test Condition Min Typ Max VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA TA = -55°C VCE = 10 V, IC = 150 mA(1) VCE = 10 V, IC = 500 mA(1) VCE = 1.0 V, IC = 150 mA(1) 35 50 75 — — — — — — 35 — — 100 40 50 — — — 300 — — V(BR)CBO IC = 10 μA, IE = 0 75 — — V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0 40 — — V Emitter-Base Breakdown Voltage V(BR)EBO IC = 10 μA, IC = 0 6.0 — — V Collector-Emitter Saturation Voltage(1) VCEsat IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA — — — — 0.3 1.0 V Base-Emitter Saturation Voltage(1) VBEsat IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.6 — — — 1.2 2.0 V Collector Cut-off Current ICEX VEB = 3 V, VCE = 60 V — — 10 nA — 10 nA ICBO VCB = 60 V, IE = 0 VCB = 50 V, IE = 0 V TA = 125°C — Collector Cut-off Current — — 10 μA IBL VEB = 3 V, VCE = 60 V — — 20 nA IEBO VEB = 3 VDC, IC = 0 — — 100 nA fT VCE = 20 V, IC = 20 mA f = 100 MHz 300 — — MHz Output Capacitance Cobo VCB = 10 V, f = 1 MHz, IE = 0 — — 8 pF Input Capacitance Cibo VEB = 0.5 V, f = 1 MHz, IC = 0 — — 25 pF NF VCE = 10 V, IC = 100 μA, RS = 1 kΩ, f = 1 kHz — — 4.0 dB VCE = 10 V, IC = 1 mA f = 1 kHz 2 — 8.0 VCE = 10 V, IC = 10 mA f = 1 kHz 0.25 — 1.25 VCE = 10 V, IC = 1 mA, f = 1 kHz 50 — 300 VCE = 10 V, IC = 10 mA, f = 1 kHz 75 — 375 VCE = 10 V, IC = 1 mA, f = 1 kHz 50 75 — — 300 375 VCE = 10 V, IC = 1 mA, f = 1 kHz 5.0 — 35 VCE = 10 V, IC = 10 mA, f = 1 kHz 25 — 200 DC Current Gain hFE Collector-Base Breakdown Voltage (1) Base Cut-off Current Emitter Cut-off Current Current Gain-Bandwidth Product Noise Figure Input Impedance hie Small Signal Current Gain hfe Voltage Feedback Ratio hre Output Admittance Note: (1) Pulse Test: Pulse width ≤ 300 μs - Duty cycle ≤ 2% “-G” suffix designated RoHS compliant version hoe Unit — kΩ — — μS Small Signal Transistor (NPN) MMBT2222A-G (RoHS Device) Electrical Characteristics Parameter (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit rb’CC IE = 20 mA, VCB = 20 V, f = 31.8 MHz — — 150 ps Delay Time (see fig. 1) td IB1 = 15 mA, IC = 150 mA, VCC = 30V, VBE = -0.5 V — — 10 ns Rise Time (see fig. 1) tr IB1 = 15 mA, IC = 150 mA, VCC = 30V, VBE = -0.5 V — — 25 ns Storage Time (see fig. 2) ts IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30V — — 225 ns Fall Time (see fig. 2) tf IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30V — — 60 ns Collector Base Time Constant Switching Time Equivalent Test Circuit Figure 1. Turn-ON Time 1.0 to 100 μs, DUTY CYCLE ≈ 2% +30V 200Ω +16 V 0 C S* < 10 pF 1kΩ -2 V Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope < 2 ns Figure 2. Turn-OFF Time 1.0 to 100 μs, DUTY CYCLE ≈ 2% +30V 200Ω +16 V 0 C S* < 10 pF 1kΩ -14 V < 20 ns -4 V “-G” suffix designated RoHS compliant version Page 3