ROHM EMD38

EMD38
Transistors
General purpose transistor
(isolated transistors)
EMD38
DTC114Y
and DTA113Z
are housed independently in a EMT6 package.
zDimensions (Unit : mm)
zApplications
Driver
EMT6
1.6
(6) (5) (4)
1pin mark
(1) (2) (3)
0.22
zStructure
NPN / PNP Silicon epitaxial planar digital transistor
0.5
1.0
0.5 0.5
1.6
1.2
zFeatures
1) DTr1 : NPN digital transistor
DTr2 : PNP digital transistor
2) Mounting possible with EMT3 automatic mounting
machines.
0.13
Each lead has same dimensions
Abbreviated symbol : D38
ROHM : EMT6
zEquivalent circuit
EMD38
(6)
(5)
R1
(4)
R2
DTr2
DTr1
R2
DTr1 : R1/R2 =10kΩ/47kΩ
DTr2 : R1/R2 =1kΩ/10kΩ
(1)
R1
(2)
(3)
zPackaging specifications
Type
EMD38
EMT6
Package
D38
Marking
T2R
Code
Basic ordering unit (pieces) 8000
1/5
EMD38
Transistors
zAbsolute maximum ratings (Ta=25°C)
DTr1
Symbol
DTr1
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
−6 to +40
V
IO
70
Parameter
Output current
IC (Max.) ∗1
100
mA
Power dissipation
Pd ∗2
120
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land, and only DTr1 is on duty.
DTr2
Symbol
DTr2
Unit
Supply voltage
VCC
−50
V
Input voltage
VIN
−10 to +5
V
IO
−100
Parameter
Output current
mA
IC (Max.)∗3
−100
Power dissipation
Pd ∗4
120
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗3 Characteristics of built-in transistor
∗4 Each terminal mounted on a recommended land, and only DTr2 is on duty.
DTr1/DTr2
Parameter
Power dissipation
Storage temperature
Symbol
Limits
Pd
150(TOTAL)
Tstg
−55 to +125
Unit
mW ∗
°C
∗ Each terminal mounted on a recommended land.
2/5
EMD38
Transistors
zElectrical characteristics (Ta=25°C)
DTr1
Parameter
Symbol
Vl(off)
Min.
−
Typ.
−
Max.
0.3
Unit
V
Conditions
VCC= 5V, Io= 100uA
Output voltage
Input current
Output current
DC current gain
VI(on)
Vo(on)
II
IO(off)
GI
1.4
−
−
−
68
−
50
−
−
−
−
300
880
500
−
V
mV
µA
VO= 0.3V, Io= 1mA
IO= 5mA, II= 0.25mA
VI= 5V
VCC= 50V, VI=0V
VO= 5V, Io= 5mA
Input resistance
Resistance ratio
Transition frequency
R1
R2/R1
fT
7
3.7
−
10
4.7
250
13
5.7
−
kΩ
−
MHz
Symbol
Vl(off)
Min.
−
Typ.
−
Max.
−0.3
Unit
V
Conditions
VCC= −5V, Io= −100uA
Output voltage
Input current
Output current
DC current gain
VI(on)
Vo(on)
II
IO(off)
GI
−3
−
−
−
33
−
−80
−
−
−
−
−300
−7.2
−500
−
V
mV
mA
Input resistance
Resistance ratio
Transition frequency
R1
R2/R1
fT
0.7
8
−
1
10
250
1.3
12
−
kΩ
−
MHz
VO= −0.3V, Io= −20mA
IO= −10mA, II= −0.5mA
VI= −5V
VCC= −50V, VI=0V
VO= −5V, Io= −5mA
−
Input voltage
nA
−
−
−
VCE= 10V, IE= −5mA, f= 100MHz ∗
∗ Characteristics of built-in transistor
DTr2
Parameter
Input voltage
nA
−
−
VCE= −10V, IE= 5mA, f= 100MHz ∗
∗ Characteristics of built-in transistor
3/5
EMD38
Transistors
zElectrical characteristic curves
DTr1
10m
5m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
Ta=−40°C
25°C
100°C
5
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
500
Fig.1 Input voltage vs. output current
(ON characteristics)
VO=5V
2m
1m
500µ
Ta=100°C
25°C
−40°C
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
Ta=100°C
25°C
−40°C
200
100
50
20
10
5
2
0.5
1.0
1.5
2.0
2.5
3.0
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
1
1k
VCC=5V
DC CURRENT GAIN : GI
100
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
lO/lI=20
OUTPUT VOLTAGE : VO(on) (V)
500m
200m
Ta=100°C
25°C
−40°C
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
4/5
EMD38
Transistors
DTr2
10m
5m
VO=−0.3V
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (on) (V)
50
20
10
5
Ta=−40°C
25°C
100°C
2
1
500m
200m
100m
−100µ −200µ
−500µ −1m −2m
−5m −10m −20m
−50m −100m
Fig.5 Input voltage vs. output current
(ON characteristics)
−1
Ta=100°C
200µ
25°C
100µ
50µ
−40°C
20µ
10µ
5µ
200
100
Ta=100°C
25°C
−40°C
50
20
10
5
2
0
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
Fig.6 Output current vs. input voltage
(OFF characteristics)
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.7 DC current gain vs. output current
IO/II=20
−500m
OUTPUT VOLTAGE : VO(on) (V)
2m
1m
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
VO=−5V
500
500µ
2µ
1µ
1k
VCC=−5V
DC CURRENT GAIN : GI
100
Ta=100°C
25°C
−40°C
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m
−50m −100m
OUTPUT CURRENT : IO (A)
Fig.8 Output voltage vs. ouput current
5/5
Appendix
Notes
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Examples of application circuits, circuit constants and any other information contained herein illustrate the
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Appendix1-Rev3.0