EMD38 Transistors General purpose transistor (isolated transistors) EMD38 DTC114Y and DTA113Z are housed independently in a EMT6 package. zDimensions (Unit : mm) zApplications Driver EMT6 1.6 (6) (5) (4) 1pin mark (1) (2) (3) 0.22 zStructure NPN / PNP Silicon epitaxial planar digital transistor 0.5 1.0 0.5 0.5 1.6 1.2 zFeatures 1) DTr1 : NPN digital transistor DTr2 : PNP digital transistor 2) Mounting possible with EMT3 automatic mounting machines. 0.13 Each lead has same dimensions Abbreviated symbol : D38 ROHM : EMT6 zEquivalent circuit EMD38 (6) (5) R1 (4) R2 DTr2 DTr1 R2 DTr1 : R1/R2 =10kΩ/47kΩ DTr2 : R1/R2 =1kΩ/10kΩ (1) R1 (2) (3) zPackaging specifications Type EMD38 EMT6 Package D38 Marking T2R Code Basic ordering unit (pieces) 8000 1/5 EMD38 Transistors zAbsolute maximum ratings (Ta=25°C) DTr1 Symbol DTr1 Unit Supply voltage VCC 50 V Input voltage VIN −6 to +40 V IO 70 Parameter Output current IC (Max.) ∗1 100 mA Power dissipation Pd ∗2 120 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Characteristics of built-in transistor ∗2 Each terminal mounted on a recommended land, and only DTr1 is on duty. DTr2 Symbol DTr2 Unit Supply voltage VCC −50 V Input voltage VIN −10 to +5 V IO −100 Parameter Output current mA IC (Max.)∗3 −100 Power dissipation Pd ∗4 120 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗3 Characteristics of built-in transistor ∗4 Each terminal mounted on a recommended land, and only DTr2 is on duty. DTr1/DTr2 Parameter Power dissipation Storage temperature Symbol Limits Pd 150(TOTAL) Tstg −55 to +125 Unit mW ∗ °C ∗ Each terminal mounted on a recommended land. 2/5 EMD38 Transistors zElectrical characteristics (Ta=25°C) DTr1 Parameter Symbol Vl(off) Min. − Typ. − Max. 0.3 Unit V Conditions VCC= 5V, Io= 100uA Output voltage Input current Output current DC current gain VI(on) Vo(on) II IO(off) GI 1.4 − − − 68 − 50 − − − − 300 880 500 − V mV µA VO= 0.3V, Io= 1mA IO= 5mA, II= 0.25mA VI= 5V VCC= 50V, VI=0V VO= 5V, Io= 5mA Input resistance Resistance ratio Transition frequency R1 R2/R1 fT 7 3.7 − 10 4.7 250 13 5.7 − kΩ − MHz Symbol Vl(off) Min. − Typ. − Max. −0.3 Unit V Conditions VCC= −5V, Io= −100uA Output voltage Input current Output current DC current gain VI(on) Vo(on) II IO(off) GI −3 − − − 33 − −80 − − − − −300 −7.2 −500 − V mV mA Input resistance Resistance ratio Transition frequency R1 R2/R1 fT 0.7 8 − 1 10 250 1.3 12 − kΩ − MHz VO= −0.3V, Io= −20mA IO= −10mA, II= −0.5mA VI= −5V VCC= −50V, VI=0V VO= −5V, Io= −5mA − Input voltage nA − − − VCE= 10V, IE= −5mA, f= 100MHz ∗ ∗ Characteristics of built-in transistor DTr2 Parameter Input voltage nA − − VCE= −10V, IE= 5mA, f= 100MHz ∗ ∗ Characteristics of built-in transistor 3/5 EMD38 Transistors zElectrical characteristic curves DTr1 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500 Fig.1 Input voltage vs. output current (ON characteristics) VO=5V 2m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Ta=100°C 25°C −40°C 200 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 4/5 EMD38 Transistors DTr2 10m 5m VO=−0.3V OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m Fig.5 Input voltage vs. output current (ON characteristics) −1 Ta=100°C 200µ 25°C 100µ 50µ −40°C 20µ 10µ 5µ 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 Fig.6 Output current vs. input voltage (OFF characteristics) 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.7 DC current gain vs. output current IO/II=20 −500m OUTPUT VOLTAGE : VO(on) (V) 2m 1m INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) VO=−5V 500 500µ 2µ 1µ 1k VCC=−5V DC CURRENT GAIN : GI 100 Ta=100°C 25°C −40°C −200m −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.8 Output voltage vs. ouput current 5/5 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. 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