TOSHIBA TPC8405

TPC8405
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type
(P Channel U−MOS IV/N Channel U-MOS III)
TPC8405
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)
N Channel RDS (ON) = 20 mΩ (typ.)
z High forward transfer admittance : P Channel |Yfs| = 12S (typ.)
N Channel |Yfs| = 14S (typ.)
z Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V)
N Channel IDSS = 10 μA (VDS = 30 V)
z Enhancement-mode
: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
P Channel N Channel
Unit
Drain-source voltage
VDSS
−30
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
30
V
Gate-source voltage
VGSS
±20
±20
V
Drain current
DC
(Note 1)
ID
−4.5
6
Pulse
(Note 1)
IDP
−18
24
―
JEITA
―
TOSHIBA
Drain power Single-device operation
(Note 3a)
dissipation
(t = 10s)
Single-device value at
(Note 2a) dual operation (Note 3b)
PD (1)
1.5
1.5
PD (2)
1.1
1.1
Single-device operation
(Note 3a)
PD (1)
0.75
0.75
(t = 10s)
Single-device value at
(Note 2b) dual operation (Note 3b)
PD (2)
0.45
0.45
Drain power
dissipation
A
JEDEC
2-6J1E
Weight: 0.080 g (typ.)
W
13.2
(Note 4a)
23.4
(Note 4b)
Circuit Configuration
Single pulse avalanche energy
EAS
Avalanche current
IAR
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
EAR
0.1
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
−4.5
6
mJ
A
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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2009-09-29
TPC8405
Thermal Characteristics
Characteristics
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Symbol
Max
Rth (ch-a) (1)
83.3
Rth (ch-a) (2)
114
Unit
°C/W
Rth (ch-a) (1)
167
Rth (ch-a) (2)
278
Marking (Note 6)
TPC8405
Part No. (or abbreviation code)
Lot No.
Note 7
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: a) VDD = −24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −4.5 A
b) VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 6.0 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: • on the lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Note 7: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2009-09-29
TPC8405
P-ch
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
—
±10
μA
Drain cut-OFF current
IDSS
VDS = −30 V, VGS = 0 V
—
—
−10
μA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−30
—
—
V (BR) DSX
ID = −10 mA, VGS = 20 V
−15
—
—
Vth
VDS = −10 V, ID = −1 mA
−0.8
—
−2.0
RDS (ON)
VGS = −4.5 V, ID = −2.2 A
—
32
42
RDS (ON)
VGS = −10 V, ID = −2.2 A
—
25
33
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −2.2 A
6
12
—
Input capacitance
Ciss
—
1540
—
Reverse transfer capacitance
Crss
—
220
—
Output capacitance
Coss
—
250
—
tr
—
5.0
—
ton
—
13
—
tf
—
35
—
toff
—
125
—
Qg
—
40
—
—
4.4
—
—
8.2
—
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source ON resistance
Rise time
Turn-ON time
VDS = −10 V, VGS = 0 V, f = 1 MHz
Switching time
V
V
mΩ
S
pF
ns
Fall time
Turn-OFF time
Total gate charge (Gate-source
plus gate-drain)
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
VDD ≈ −24 V, VGS = −10 V, ID = −4.5 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
—
—
—
−18
A
—
—
1.2
V
VDSF
IDR = −4.5 A, VGS = 0 V
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2009-09-29
TPC8405
N-ch
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
―
―
±10
μA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
―
―
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
―
―
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
―
―
Vth
VDS = 10 V, ID = 1 mA
1.3
―
2.5
RDS (ON)
VGS = 4.5 V, ID = 3 A
―
25
33
RDS (ON)
VGS = 10 V, ID = 3 A
―
20
26
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
7
14
―
Input capacitance
Ciss
―
1240
―
―
180
―
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source ON resistance
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
Output capacitance
Coss
―
230
―
tr
―
4.5
―
ton
―
12.5
―
Rise time
Turn-ON time
Switching time
V
V
mΩ
S
pF
ns
Fall time
Turn-OFF time
Total gate charge (Gate-source
plus gate-drain)
tf
―
6.6
―
toff
―
33
―
Qg
―
27
―
―
3.9
―
―
7.0
―
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 6 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
—
—
—
24
A
—
—
−1.2
V
VDSF
IDR = 6 A, VGS = 0 V
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2009-09-29
TPC8405
P-ch
ID – VDS
−10
−6
−4
−3.2
Common source
Ta = 25°C
Pulse test
−2.8
−8
−2.6
ID
−2.4
−6
−2.3
−4
−2.2
−2.1
−2
−0.2
−0.4
−0.6
Drain−source voltage
−0.8
VDS
−15
Common source
Ta = 25°C
Pulse test
−12
−2.6
−2.8
−9
−2.4
−2.3
−6
−2.2
−2.1
−3
VGS = −2 V
0
0
−10
−4 −3.2
−6
Drain current
ID
(A)
−8
Drain current
ID – VDS
−18
(A)
−10
VGS = −2 V
0
0
−1.0
(V)
−1
−2
ID – VGS
Drain−source voltage
Drain current
ID
(A)
VDS (V)
Common source
VDS = −10 V
Pulse test
−6
25
Ta = −55°C
100
−2
−1
−3
−4
Gate−source voltage
VGS
−0.4
−0.3
−0.2
−0.1
0
0
−5
(V)
−4
−6
−8
−10
VGS
(V)
−12
RDS (ON) – ID
Drain−source ON resistance
RDS (ON) (mΩ)
Forward transfer admittance
|Yfs| (S)
−2
−2.2
Gate−source voltage
Common source
VDS = −10 V
Pulse test
25
100
10
−1
Drain current
ID = −4.5 A
−1.3
100
Ta = −55°C
1
−0.1
Common source
Ta = 25°C
Pulse test
−0.5
|Yfs| – ID
100
(V)
VDS – VGS
−9
0
0
VDS
−5
−0.6
−12
−3
−4
Drain−source voltage
−18
−15
−3
−10
ID
VGS = −4.5 V
−10
10
1
−0.1
−100
(A)
Common source
Ta = 25°C
Pulse test
−1
Drain current
5
−10
ID
−100
(A)
2009-09-29
TPC8405
P-ch
RDS (ON) – Ta
IDR – VDS
−100
50
(A)
IDR
40
VGS = −4.5 V
ID = −1.3 A, −2.2 A, −4.5 A
VGS = −10 V
10
0
−80
−40
0
40
Ambient temperature
80
120
Ta
−10
−1
0.2
C – VDS
Vth (V)
(pF)
1000
Gate threshold voltage
VDS
Coss
Crss
100
f = 1 MHz
−1
VDS = −10 V
−10
Pulse test
−1.2
−0.8
−0.4
−40
0
160
(°C)
VDS (V)
(4)
100
150
Ta
−16
Common source
0.4
Ambient temperature
Ta
−40
0.8 (3)
50
120
Dynamic input/output
characteristics
Drain−source voltage
(W)
1.2 (2)
80
(V)
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t = 10 s
1.6 (1)
40
Ambient temperature
−100
VDS
ID = −1 mA
PD – Ta
2.0
(V)
Common source
−1.6
0
−80
Ta = 25°C
Drain−source voltage
1.2
ID = −4.5 A
Ta = 25°C
−30
(°C)
−12
Pulse test
VDS
−12
−20
−6
VDD = −24 V
−4
VGS
10
20
Total gate charge
6
−8
−10
0
0
200
(V)
C
Capacitance
Ciss
10
−0.1
1.0
Vth – Ta
VGS = 0 V
PD
0.8
−2.0
Common source
Drain power dissipation
0.6
0.4
Drain−source voltage
(°C)
10000
0
0
VGS = 0 V
−1
−0.1
0
160
−3
30
Qg
40
VGS
20
−5
−10
Gate−source voltage
30
Common source
Ta = 25°C
Pulse test
ID = −1.3 A, −2.2 A, −4.5 A
Pulse test
Drain reverse current
Drain−source ON resistance
RDS (ON) (mΩ)
Common source
0
50
(nC)
2009-09-29
TPC8405
P-ch
rth − tw
1000
(4)
Single pulse
(3)
Transient thermal impedance
rth (°C/W)
(2)
(1)
100
10
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
t = 10 s
1
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe operating area
−100
Single-device value at dual
operation (Note 3b)
−10
1 ms*
Drain current
ID
(A)
ID max (Pulse)*
10 ms*
−1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature
−0.1
−0.1
VDSS max
−1
Drain−source voltage
−10
VDS
−100
(V)
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2009-09-29
TPC8405
N-ch
ID – VDS
ID – VDS
3.2
6
3.1
3.8
3.6
16
3
3.4
ID
6
2.9
4
10
6
Drain current
Drain current
ID
(A)
8
20
Common source
Ta = 25°C
Pulse test
3.3
4
10
3.6
3.8
Common source
Ta = 25°C
Pulse test
3.4
4
(A)
10
2.8
2.7
2
3.3
12
3.2
3.1
8
3
2.9
2.8
4
2.7
VGS = 2.6 V
0
0
0.2
0.4
0.6
Drain−source voltage
0.8
VDS
VGS = 2.6 V
0
0
1.0
(V)
2
1
ID – VGS
VDS (V)
Drain−source voltage
(A)
ID
Drain current
25
Ta = −55°C
100
4
2
1
3
5
4
Gate−source voltage
VGS
0.4
0.3
0.2
ID = 6 A
0.1
0
0
6
(V)
4
8
6
Common source
VDS = 10 V
Pulse test
Ta = 100°C
1
1
Drain current
10
ID
12
10
VGS
(V)
RDS (ON) – ID
Drain−source ON resistance
RDS (ON) (mΩ)
Forward transfer admittance
⎪Yfs⎪ (S)
2
3
Gate−source voltage
25°C
0.1
0.1
1.5
1000
−55°C
(V)
Common source
Ta = 25°C
Pulse test
0.5
|Yfs| – ID
10
5
VDS – VGS
Common source
VDS = 10 V
Pulse test
8
100
VDS
0.6
12
0
0
4
Drain−source voltage
20
16
3
100
VGS = 4.5 V
10
1
1
100
(A)
Common source
Ta = 25°C
Pulse test
VGS = 10 V
10
Drain current
8
100
ID
(A)
2009-09-29
TPC8405
N-ch
IDR – VDS
RDS (ON) – Ta
100
50
Common source
Ta = 25°C
Pulse test
(A)
Common source
IDR
40
ID = 4.5 A
ID = 2.2 A
30
Drain reverse current
Drain−source On resistance
RDS (ON) (mΩ)
Pulse test
ID = 1.3 A
ID = 4.5 A
VGS = 4.5 V
ID = 2.2 A
20
ID = 1.3 A
VGS = 10 V
10
0
−80
−40
0
40
Ambient temperature
80
120
Ta
10
3
10
1
1
0.1
0
160
5
(°C)
−0.4
−0.2
VGS = 0 V
−0.8
−0.6
Drain−source voltage
C – VDS
−1.0
VDS
(V)
80
120
−1.2
Vth – Ta
10000
5
Vth (V)
Gate threshold voltage
Ciss
1000
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
Drain−source voltage
3
2
1
0
−80
100
VDS
Pulse test
(V)
−40
VDS (V)
(4)
0.4
50
100
Ambient temperature
150
Ta
16
Common source
0.8 (3)
0
0
(°C)
40
Drain−source voltage
(W)
PD
Drain power dissipation
1.2 (2)
Ta
160
Dynamic input/output
characteristics
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t = 10 s
1.6 (1)
40
Ambient temperature
PD – Ta
2.0
0
Ta = 25°C
30
(°C)
ID = 6 A
12
Pulse test
VDS
12
20
8
VDD = 24 V
6
10
4
VGS
0
0
200
(V)
1
ID = 1 mA
10
20
Total gate charge
9
30
Qg
VGS
10
0.1
VDS = 10 V
4
Gate−source voltage
Capacitance
C
(pF)
Common source
0
40
(nC)
2009-09-29
TPC8405
N-ch
rth − tw
1000
(4)
Single pulse
(3)
(2)
Transient thermal impedance
rth (°C/W)
(1)
100
10
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
t = 10 s
1
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe operating area
100
Single-device value at dual
operation (Note 3b)
1 ms*
10
Drain current
ID
(A)
ID max (Pulse) *
10 ms*
1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature
0.1
0.1
VDSS max
1
Drain−source voltage
10
VDS
100
(V)
10
2009-09-29
TPC8405
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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2009-09-29