TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications Unit: mm • Small footprint due to a small and thin package • High-speed switching • Small gate charge: • (Q2) QSW = 3.6 nC (typ.) Low drain-source ON-resistance: (Q1) RDS (ON) = 21 mΩ (typ.) (Q1) QSW = 3.4 nC (typ.) (Q2) RDS (ON) = 14 mΩ (typ.) • Low leakage current: • (Q2) IDSS =100μA (max) (VDS = 30 V) Enhancement mode: (Q1) Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) (Q1) IDSS = 10 μA (max) (VDS = 30 V) (Q2) Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating (Q1) (Q2) Unit Drain−source voltage VDSS 30 30 V Drain−gate voltage (RGS = 20 kΩ) VDGR 30 30 V Gate−source voltage VGSS ±20 ±20 V Drain current DC (Note 1) ID 6.8 8.5 Pulse (Note 1) IDP 27.2 34 Single-device operation (Note 3a) Drain power dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) A ⎯ JEITA ⎯ TOSHIBA 1.5 PD (1) JEDEC 2-6J1E Weight: 0.085 g (typ.) W PD (2) 1.1 PD (1) 0.75 PD 2) 0.45 Circuit Configuration W Single-pulse avalanche energy (Note 4) EAS 60.1 94 mJ Avalanche current IAR 6.8 8.5 A Repetitive avalanche energy (Note 2a, Note 3b, Note 5) EAR 0.11 0.09 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating” Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-07-21 TPC8A07-H Thermal Characteristics Characteristic Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 83.3 Rth (ch-a) (2) 114 Rth (ch-a) (1) 167 Rth (ch-a) (2) 278 Unit °C/W Marking (Note 6) TPC8A07 H Part No. (or abbreviation code) Lot No. Note 7: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Note 7 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: (Q1) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 6.8 A (Q2) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 8.5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on the lower left of the marking indicates Pin 1. * Weekly code: (three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (the last digit of the year) 2 2009-07-21 TPC8A07-H Q1 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Vth VDS = 10 V, ID = 1.0 mA 1.5 ⎯ 2.5 V VGS = 4.5 V, ID = 3.4 A ⎯ 21 28 VGS = 10 V, ID = 3.4 A ⎯ 17 23 VDS = 10 V, ID = 3.4 A 11 22 ⎯ ⎯ 830 1100 ⎯ 54 82 ⎯ 180 ⎯ ⎯ 1.7 2.6 ⎯ 2.2 ⎯ ⎯ 7.7 ⎯ Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance rg Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 5 MHz tr VGS Turn-on time ton Turn-off time Total gate charge (gate-source plus gate-drain) Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW 4.7 Ω S pF Ω 2.5 ⎯ ⎯ 18 ⎯ VDD ≈ 24 V, VGS = 10 V, ID = 6.8 A ⎯ 13 ⎯ VDD ≈ 24 V, VGS = 5 V, ID = 6.8 A ⎯ 6.9 ⎯ ⎯ 2.9 ⎯ ⎯ 2.3 ⎯ ⎯ 3.4 ⎯ VDD ≈ 15 V Duty ≤ 1%, tw = 10 μs toff Gate-source charge 1 mΩ ns ⎯ tf Qg 出力 0V Switching time Fall time ID = 3.4 A 10 V RL = 4.4Ω Drain-source breakdown voltage VDD ≈ 24 V, VGS = 10 V, ID = 6.8 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 27.2 A ⎯ ⎯ −1.2 V VDSF IDR = 6.8 A, VGS = 0 V 3 2009-07-21 TPC8A07-H Q2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Vth VDS = 10 V, ID = 1.0 mA 1.3 ⎯ 2.3 V VGS = 4.5 V, ID = 4.3 A ⎯ 14 19 VGS = 10 V , ID = 4.3 A ⎯ 11 15 VDS = 10 V, ID = 4.3 A 13 26 ⎯ ⎯ 1100 1400 ⎯ 50 75 ⎯ 320 ⎯ ⎯ 1.9 2.9 ⎯ 2.1 ⎯ ⎯ 7.8 ⎯ Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance rg Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 5 MHz tr VGS Turn-on time ton 0V Turn-off time Total gate charge (gate-source plus gate-drain) (Note 7) 4.7 Ω Switching time Fall time Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW mΩ S pF Ω ns 3.1 ⎯ ⎯ 22 ⎯ VDD ≈ 24 V, VGS = 10 V, ID = 8.5 A ⎯ 16 ⎯ VDD ≈ 24 V, VGS = 5 V, ID = 8.5 A ⎯ 8.1 ⎯ ⎯ 3.4 ⎯ ⎯ 2.2 ⎯ ⎯ 3.6 ⎯ VDD ≈ 15 V Duty ≤ 1%, tw = 10 μs toff Gate-source charge 1 出力 ⎯ tf Qg ID = 4.3 A 10 V RL = 3.49Ω Drain-source breakdown voltage VDD ≈ 24 V, VGS = 10 V, ID = 8.5 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Peak forward current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IFP ⎯ ⎯ ⎯ 34 A IDR = 1 A, VGS = 0 V ⎯ − 0.4 − 0.6 V IDR = 8.5 A, VGS = 0 V ⎯ ⎯ − 1.2 V VDSF 4 2009-07-21 TPC8A07-H Q1 8 6 5 4 10 8 6 5 ID – VDS 3.5 Common source Ta = 25°C Pulse test 3.3 4.5 10 ID – VDS 4 Common source Ta = 25°C Pulse test 3.6 4.5 16 3.2 ID 3.1 6 Drain current Drain current ID (A) 8 20 3.5 (A) 10 3 4 2.9 2 3.4 12 3.3 3.2 8 3.1 3 4 VGS = 2.7 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 0 1 VGS = 2.8 V 0 (V) 0.4 0.8 Drain-source voltage ID – VGS Ta = −55°C 100 1 2 25 3 Gate-source voltage 4 VGS 0.3 0.2 ID = 6.8 A 0.1 3.4 1.7 0 0 5 (V) 2 4 VGS 10 (V) RDS (ON) − ID Drain-source ON-resistance RDS (ON) (mΩ) (S) |Yfs| Forward transfer admittance 8 100 Common source VDS = 10 V Pulse test 100 Ta = −55°C 10 25 100 1 0.1 0.1 6 Gate-source voltage ⎪Yfs⎪ − ID 1000 (V) Common source Ta = 25°C Pulse test (V) VDS Drain-source voltage ID Drain current 5 0 VDS 2 VDS – VGS 10 0 1.6 0.4 Common source VDS = 10 V Pulse test (A) 15 1.2 1 Drain current 10 ID Common source Ta = 25°C Pulse test 4.5 V 1 0.1 100 (A) VGS = 10 V 10 1 Drain current 5 10 ID 100 (A) 2009-07-21 TPC8A07-H Q1 RDS (ON) − Ta IDR − VDS 100 40 (A) 32 IDR ID = 1.7, 3.4, 6.8 A Drain reverse current 24 VGS = 4.5 V ID = 1.7, 3.4, 6.8 A 16 VGS = 10 V 8 0 −80 −40 0 40 Ambient temperature 80 120 Ta 10 1 VGS = 0 V Common source Ta = 25°C Pulse test 1 160 0 (°C) −0.2 −0.4 Capacitance − VDS Vth (V) Gate threshold voltage VDS −1.2 (V) Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 1.0 0.5 0 −80 100 VDS 1.5 Common source VDS = 10 V ID = 1 mA Pulse test −40 (V) VDS (2) 1.0 (3) 0.5 (4) 80 Ambient temperature 120 Ta 160 (°C) 30 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 40 80 Dynamic input/output characteristics Drain-source voltage (W) (1) 40 Ambient temperature (V) PD – Ta 2.0 0 120 Ta VDS 20 (°C) 24 Common source ID = 6.8 A 4 Ta = 25°C Pulse test 10 3 6 Total gate charge 6 8 VDD = 6 V 12 0 0 160 12 (V) 1 2.0 12 9 Qg VGS (pF) C Capacitance Coss 100 Drain-source voltage PD −1.0 Vth − Ta Ciss 10 0.1 Drain power dissipation −0.8 2.5 1000 0 0 −0.6 Drain-source voltage 10000 1.5 4.5 3 10 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 0 15 (nC) 2009-07-21 TPC8A07-H Q1 rth – tw 1000 Transient thermal impedance rth (°C/W) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) 100 (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) (4) (3) (2) (1) 10 1 0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 Pulse width 1 tw 10 100 1000 (s) Safe operating area 100 Single-device value at dual operation (Note 3b) 10 t =1 ms * t =10 ms * Drain current ID (A) ID max (Pulse) * 1 0.1 *Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 7 2009-07-21 TPC8A07-H Q2 (Includes Schottky Barrier Diode) 8 10 10 65 865 ID – VDS 4.5 20 4 Common source Ta = 25°C Pulse test 3 8 4 3.3 Common source Ta = 25°C Pulse test 3.2 16 3.1 (A) 2.9 (A) 10 ID – VDS 4.5 3 ID 6 Drain current Drain current ID 2.8 2.7 4 2.6 2 12 2.9 2.8 8 2.7 4 2.6 VGS = 2.4 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS VGS = 2.4 V 0 0 1 (V) 0.4 0.8 Common source Ta = 25°C Pulse test (V) VDS (A) Drain-source voltage ID Drain current Ta = −55°C 5 100 1 2 25 3 Gate-source voltage 4 VGS 0.3 0.2 ID = 8.5 A 0.1 2.1 0 0 5 4.3 (V) 2 4 Drain-source ON-resistance RDS (ON) (mΩ) (S) |Yfs| Forward transfer admittance Common source VDS = 10 V Pulse test 100 Ta = −55°C 100 25 1 0.1 0.1 1 Drain current 10 ID 8 VGS 10 (V) RDS (ON) − ID 100 10 6 Gate-source voltage ⎪Yfs⎪ − ID 1000 (V) VDS – VGS Common source VDS = 10 V Pulse test 0 VDS 2 0.4 10 0 1.6 Drain-source voltage ID – VGS 15 1.2 4.5 V 10 1 0.1 100 (A) Common source Ta = 25°C Pulse test VGS = 10 V 1 Drain current 8 10 ID 100 (A) 2009-07-21 TPC8A07-H Q2 (Includes Schottky Barrier Diode) RDS (ON) − Ta IDR − VDS 30 100 (A) 24 18 ID = 2.1, 4.3, 8.5 A VGS = 4.5 V 12 VGS = 10 V 6 0 −80 −40 0 40 Ambient temperature 10 IDR ID = 2.1, 4.3, 8.5 A Drain reverse current 80 120 Ta 1 10 0 (°C) −0.2 −0.4 −0.6 Capacitance − VDS Vth (V) Gate threshold voltage (V) 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 80 120 1.0 0.5 0 −80 100 VDS 1.5 Common source VDS = 10 V ID = 1 mA Pulse test −40 (V) VDS (2) 1.0 (3) 0.5 (4) 80 Ambient temperature (°C) 30 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 40 Ta 160 Dynamic input/output characteristics Drain-source voltage (W) (1) 40 Ambient temperature (V) PD – Ta 2.0 0 120 Ta VDS (°C) VDD = 6 V 20 24 Common source ID = 8.5 A 4 Ta = 25°C Pulse test 10 4 8 Total gate charge 9 8 12 0 0 160 12 (V) 1 2.0 12 Qg 16 VGS (pF) C Capacitance Coss Drain-source voltage PD VDS −1.2 Vth − Ta Ciss 10 0.1 Drain power dissipation −1.0 2.5 1000 0 0 −0.8 Drain-source voltage 10000 1.5 VGS = 0 V Common source Ta = 25°C Pulse test 1 160 4.5 3 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 0 20 (nC) 2009-07-21 TPC8A07-H Q2 (Includes Schottky Barrier Diode) rth – tw 1000 Transient thermal impedance rth (°C/W) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) 100 (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) (4) (3) (2) (1) 10 1 0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 Pulse width 1 tw 10 100 1000 (s) Safe operating area 100 Single-device value at dual operation (Note 3b) ID max (Pulse) * t =10 ms * Drain current ID (A) t =1 ms * 10 1 0.1 *Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 10 2009-07-21 TPC8A07-H Q2 (VGS= 0V) IDSS – Tch IDR – VDSF 100000 IDSS Drain cutoff current Drain reverse current 125 10 75 Ta = 25°C 1 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDSF (V) Pulse test 10 20 10000 VDS = 30 V 5 1000 100 10 0 1 (typ.) VGS = 0 V (μA) Pulse test VGS = 0 V IDR (A) 100 40 80 Channel temperature 120 Tch 160 (°C) Tch – VDS Channel temperature Tch (°C) 160 Pulse test VGS = 0 V 140 120 100 80 60 40 20 0 0 10 20 Drain-source voltage 30 VDS 40 (V) 11 2009-07-21 TPC8A07-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 12 2009-07-21