MBR3030PT - MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Features · Guard Ring Die Construction for Transient Protection · · · · Low Power Loss, High Efficiency · Lead Free Finish, RoHS Compliant (Note 4) TO-3P High Surge Capability A B High Current Capability and Low Forward Voltage Drop H For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications J S C Mechanical Data · · Case: TO-3P · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · K R P Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 L Q G D N Terminals: Finish ¾ Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body E M Ordering Information: See Last Page M Marking: Type Number Weight: 5.6 grams (approximate) Dim Min Max A 1.88 2.08 B 4.68 5.36 C 20.63 22.38 D 18.5 21.5 E 2.1 2.4 G 0.51 0.76 H 15.38 16.25 J 1.90 2.70 K 2.9Æ 3.65Æ L 3.78 4.50 M 5.2 5.7 N 0.89 1.53 P 1.82 2.46 Q 2.92 3.23 R 11.70 12.84 S ¾ 6.10 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 125°C Total Device (See Fig. 1) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Symbol MBR 3030PT MBR 3035PT MBR 3040PT MBR 3045PT MBR 3050PT MBR 3060PT Unit VRRM VRWM VR 30 35 40 45 50 60 V VR(RMS) 21 24.5 28 31.5 35 42 V IO 30 A IFSM 200 A @ IF = 20A, TC = 25°C @ IF = 20A, TC = 125°C @ IF = 30A, TC = 25°C @ IF = 30A, TC = 125°C VFM ¾ 0.60 0.76 0.72 0.75 0.65 0.80 0.75 V Peak Reverse Current @ TC = 25°C at Rated DC Blocking Voltage, per element @ TC = 125°C IRM 1.0 60 5.0 100 mA Forward Voltage Drop per element (Note 3) Typical Total Capacitance (Note 2) CT 500 pF Typical Thermal Resistance Junction to Case (Note 1) RqJc 1.4 °C/W dV/dt 10,000 V/µs Tj -65 to +150 °C TSTG -65 to +175 °C Voltage Rate of Change (Rated VR) Operating Temperature Range Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Pulse width £300 ms, duty cycle £2%. 4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23017 Rev. 8 - 2 1 of 3 www.diodes.com MBR3030PT - MBR3060PT ã Diodes Incorporated 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE FORWARD CURRENT (A) 30 24 18 12 6 0 0 50 100 MBR 3030PT - MBR 3045PT 10 MBR 3050PT - MBR 3060PT 1.0 Tj = 25°C 2% duty cycle 0.1 0 150 0.2 0.4 0.6 300 4000 Tj = 25°C f = 1MHz Tj = 25°C 8.3ms Single half-wave JEDEC Method 250 0.8 VF, INSTANTANEOUS F0RWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, per element CT, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve, total device 200 150 100 1000 50 100 0 0.1 100 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance 100 Tj = 125°C 10 1.0 Tj = 75°C 0.1 Tj = 25°C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics, per element DS23017 Rev. 8 - 2 2 of 3 www.diodes.com MBR3030PT - MBR3060PT Ordering Information Notes: (Note 5) Device Packaging Shipping MBR3030PT TO-3P 30/Tube MBR3035PT TO-3P 30/Tube MBR3040PT TO-3P 30/Tube MBR3045PT TO-3P 30/Tube MBR3050PT TO-3P 30/Tube MBR3060PT TO-3P 30/Tube 5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf. DS23017 Rev. 8 - 2 3 of 3 www.diodes.com MBR3030PT - MBR3060PT