MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT5551) Ideal for Medium Power Amplification and Switching · · · · · · Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 G D 0.89 1.03 H E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0° 8° B TOP VIEW B C E D E Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K4M Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) Maximum Ratings Dim C Mechanical Data · · SOT-23 A K M J L C E B All Dimensions in mm @ TA = 25°C unless otherwise specified Characteristic Symbol MMBT5401 Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -200 mA Power Dissipation (Note 1) Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -160 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -150 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10mA, IC = 0 Collector Cutoff Current ICBO ¾ -50 nA mA VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 100°C Emitter Cutoff Current IEBO ¾ -50 nA VEB = -3.0V, IC = 0 hFE 50 60 50 ¾ 240 ¾ ¾ IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.2 -0.5 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base- Emitter Saturation Voltage VBE(SAT) ¾ -1.0 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Cobo ¾ 6.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 40 200 ¾ Current Gain-Bandwidth Product fT 100 300 MHz VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -10mA, f = 100MHz Noise Figure NF ¾ 8.0 dB OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Notes: VCE = -5.0V, IC = -200mA, RS = 10W, f = 1.0kHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS30057 Rev. 3 - 2 1 of 2 www.diodes.com MMBT5401 Ordering Information Notes: (Note 3) Device Packaging Shipping MMBT5401-7 SOT-23 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. K4M YM Marking Information K4M = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30057 Rev. 3 - 2 2 of 2 www.diodes.com MMBT5401