BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.008 grams (approximate) • • • • • • • SOT-363 D1 G2 S2 Q1 Q2 S1 TOP VIEW Maximum Ratings – Total Device Symbol PD RθJA TJ, TSTG Operating and Storage Temperature Range Maximum Ratings N-CHANNEL – Q1, 2N7002 Section Characteristic Symbol VDSS VDGR Drain-Source Voltage Drain Current (Note 1) Continuous Pulsed Continuous Continuous @ 100°C Pulsed VGSS ID Maximum Ratings P-CHANNEL – Q2, BSS84 Section Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 20KΩ Gate-Source Voltage Drain Current (Note 1) Notes: D2 @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage G1 TOP VIEW Internal Schematic Continuous Continuous Symbol VDSS VDGR VGSS ID Value 200 625 Units mW °C/W -55 to +150 °C @TA = 25°C unless otherwise specified Value 60 60 ±20 ±40 115 73 800 Units V V V mA @TA = 25°C unless otherwise specified Value -50 -50 ±20 -130 Units V V V mA 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS8402DW Document number: DS30380 Rev. 12 - 2 1 of 5 www.diodes.com June 2008 © Diodes Incorporated BSS8402DW Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage NEW PRODUCT Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance @ Tj = 25°C @ Tj = 125°C On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Symbol Min Typ BVDSS 60 @TA = 25°C unless otherwise specified Max Unit 70 ⎯ V VGS = 0V, ID = 10μA µA VDS = 60V, VGS = 0V IDSS ⎯ ⎯ 1.0 500 IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 ⎯ 2.5 V RDS (ON) ⎯ 3.2 4.4 7.5 13.5 Ω ID(ON) gFS 0.5 80 1.0 ⎯ ⎯ ⎯ A mS VDS = VGS, ID = 250μA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Ciss Coss Crss ⎯ ⎯ ⎯ 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) ⎯ ⎯ 7.0 11 20 20 ns ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω Electrical Characteristics P-CHANNEL – Q2, BSS84 Section Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Test Condition @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -15 -60 -100 µA µA nA ±10 nA VGS = 0V, ID = -250µA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time IGSS -50 ⎯ ⎯ ⎯ ⎯ VGS(th) RDS (ON) gFS -0.8 ⎯ .05 ⎯ ⎯ ⎯ -2.0 10 ⎯ V Ω S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) ⎯ ⎯ 10 18 ⎯ ⎯ ns ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V Notes: V Test Condition 5. Short duration pulse test used to minimize self-heating effect. BSS8402DW Document number: DS30380 Rev. 12 - 2 2 of 5 www.diodes.com June 2008 © Diodes Incorporated BSS8402DW N-CHANNEL – 2N7002 SECTION 7 1.0 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN-SOURCE CURRENT (A) 0.8 0.6 0.4 0.2 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 5 4 3 2 1 0 5 2.5 2.0 1.5 VGS = 10V, ID = 200mA 1.0 -55 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 1.0 6 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 6 0 0 3.0 5 4 3 2 1 0 0 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs. Junction Temperature 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 250 10 VDS = 10V Pd, POWER DISSIPATION (mW) 9 VGS, GATE-SOURCE CURRENT (V) NEW PRODUCT Tj = 25°C 8 7 6 5 4 3 2 200 150 100 50 1 0 0 0.2 0.4 0.8 0.6 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics BSS8402DW Document number: DS30380 Rev. 12 - 2 1 3 of 5 www.diodes.com 0 50 75 100 125 150 175 200 25 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 0 June 2008 © Diodes Incorporated BSS8402DW P-CHANNEL – BSS84 SECTION -600 -1.0 -0.8 ID, DRAIN CURRENT (A) ID, DRAIN-SOURCE CURRENT (mA) -500 -400 -0.6 -300 -0.4 -200 -0.2 -100 0 -0.0 0 -2 -3 -4 -5 VDS, DRAIN-SOURCE (V) Fig. 7 Drain-Source Current vs. Drain-Source Voltage -1 0 VGS = -10V ID = -0.13A 9 8 RDS, ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) -5 -1 -2 -3 -4 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 8 Drain Current vs. Gate-Source Voltage 15 10 7 6 5 4 3 12 9 6 3 2 TA = 125° C 1 TA = 25° C 0 0 -1 -2 -4 -5 -3 VGS, GATE TO SOURCE (V) Fig. 9 On-Resistance vs. Gate-Source Voltage 0 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 10 On-Resistance vs. Junction Temperature -25 25.0 20.0 RDS, ON-RESISTANCE (Ω) NEW PRODUCT T A = 25°C VGS = -3.5V VGS = -3V 15.0 VGS = -5V VGS = -4V 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.0 -0.2 -0.4 -0.6 -0.8 ID, DRAIN CURRENT (A) Fig. 11 On-Resistance vs. Drain Current BSS8402DW Document number: DS30380 Rev. 12 - 2 1.0 4 of 5 www.diodes.com June 2008 © Diodes Incorporated BSS8402DW Ordering Information (Note 6) Part Number BSS8402DW-7-F Notes: Case SOT-363 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. KNP Date Code Key Year Code 2003 P 2004 R KNP = Product Type Marking Code YM = Date Code Marking Y = Year (ex: R = 2004) M = Month (ex: 9 = September) YM NEW PRODUCT Marking Information 2005 S 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A B C H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm Suggested Pad Layout E Z E Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 C G Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS8402DW Document number: DS30380 Rev. 12 - 2 5 of 5 www.diodes.com June 2008 © Diodes Incorporated