DMC2004LPK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage VGS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: DFN1612-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.003 grams (approximate) • • • • • • D1 6 DFN1612-6 G2 5 S2 4 Q1 1 S1 ESD protected Maximum Ratings N-CHANNEL – Q1 Symbol VDSS VGSS Unit V V Unit V V ID Value -20 ±8 -600 -430 Symbol Value Unit Pd 500 mW RθJA 250 °C/W Tj, TSTG -65 to +150 °C ID Characteristic Symbol VDSS VGSS TA = 25°C TA = 85°C Thermal Characteristics mA @TA = 25°C unless otherwise specified Drain Source Voltage Gate-Source Voltage mA @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: Value 20 ±8 750 540 TA = 25°C TA = 85°C Drain Current (Note 1) 3 D2 @TA = 25°C unless otherwise specified Characteristic Maximum Ratings P-CHANNEL – Q2 2 G1 TOP VIEW Internal Schematic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Q2 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMC2004LPK Document number: DS30854 Rev. 6 - 2 1 of 7 www.diodes.com September 2007 © Diodes Incorporated DMC2004LPK Electrical Characteristics N-CHANNEL – Q1 Static Drain-Source On-Resistance Electrical Characteristics P-CHANNEL – Q2 Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±1 V μA μA VGS = 0V, ID = 10μA VDS = 16V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V 0.4 0.5 0.7 0.55 0.70 0.90 Ω |Yfs| VSD ⎯ ⎯ ⎯ 200 0.5 ⎯ ⎯ ⎯ 1.2 mS V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 25 20 pF pF pF RDS (ON) Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Condition VDS = 16V, VGS = 0V f = 1.0MHz @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ± 1.0 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 ⎯ -1.0 V RDS (ON) ⎯ 0.7 1.1 1.7 0.9 1.4 2.0 Ω |Yfs| VSD 200 -0.5 ⎯ ⎯ ⎯ -1.2 mS V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = 0.2A VGS = 0V, IS = -115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 175 30 20 pF pF pF VDS = -16V, VGS = 0V f = 1.0MHz 4. Short duration pulse test used to minimize self-heating effect. ID, DRAIN CURRENT (A) Q1, N-CHANNEL ID, DRAIN CURRENT (A) NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage @TA = 25°C unless otherwise specified 0 0 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMC2004LPK Document number: DS30854 Rev. 6 - 2 2 of 7 www.diodes.com September 2007 © Diodes Incorporated DMC2004LPK VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Q1, N-CHANNEL, continued TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature DMC2004LPK Document number: DS30854 Rev. 6 - 2 3 of 7 www.diodes.com September 2007 © Diodes Incorporated DMC2004LPK NEW PRODUCT Q1, N-CHANNEL, continued VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) Q2, P-CHANNEL 0 0 -VGS, GATE SOURCE VOLTAGE (V) Fig. 12 Typical Transfer Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) -VDS, DRAIN SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics TA, AMBIENT TEMPERATURE (°C) Fig. 13 Gate Threshold Voltage vs. Ambient Temperature DMC2004LPK Document number: DS30854 Rev. 6 - 2 -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current 4 of 7 www.diodes.com September 2007 © Diodes Incorporated DMC2004LPK NEW PRODUCT Q2, P-CHANNEL, continued 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 16 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage -ID, DRAIN-SOURCE CURRENT (A) Fig. 15 Static Drain-Source On-Resistance vs. Drain Current TA, AMBIENT TEMPERATURE (°C) Fig. 17 Static Drain-Source On-State Resistance vs. Ambient Temperature -ID, DRAIN CURRENT (A) Fig. 19 Forward Transfer Admittance vs. Drain Current DMC2004LPK Document number: DS30854 Rev. 6 - 2 5 of 7 www.diodes.com -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Capacitance September 2007 © Diodes Incorporated DMC2004LPK Ordering Information (Note 5) Part Number DMC2004LPK-7 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM NEW PRODUCT Notes: Case DFN1612-6 C1 Date Code Key Year Code 2007 U Month Code C1 = Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 2008 V Jan 1 Feb 2 2009 W Mar 3 Apr 4 May 5 2010 X Jun 6 Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D Package Outline Dimensions G H F Z R0. 150 L1 K L2 E B N C N D M Z A DFN1612-6 Dim Min Max Typ A 1.55 1.68 1.60 B 1.15 1.28 1.20 C 0.20 0.30 0.25 D* 0.15 ⎯ ⎯ E** 0.20 ⎯ ⎯ F 0.37 ⎯ ⎯ G 0.47 0.53 0.50 H 0 0.05 0.02 K* 0.13 ⎯ ⎯ L ⎯ ⎯ ⎯ L1** 0.40 0.60 0.50 L2** 0.45 0.65 0.55 M** 0.40 ⎯ ⎯ N* 0.25 ⎯ ⎯ Z** 0.10 ⎯ ⎯ All Dimensions in mm * Dimensions D, K, N Repeat 4x ** Dimensions E, L1, L2, M, Z Repeat 2x Suggested Pad Layout X3 a X Y b Y2 Y1 X2 DMC2004LPK Document number: DS30854 Rev. 6 - 2 Dimensions X Y X1 Y1 X2 Y2 X3 a b Value (in mm) 0.60 0.65 0.25 0.45 0.175 0.15 0.15 0.10 0.15 X1 6 of 7 www.diodes.com September 2007 © Diodes Incorporated NEW PRODUCT DMC2004LPK IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMC2004LPK Document number: DS30854 Rev. 6 - 2 7 of 7 www.diodes.com September 2007 © Diodes Incorporated