DIODES DMC2004LPK

DMC2004LPK
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
NEW PRODUCT
Features
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Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage VGS(th) < 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: DFN1612-6
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.003 grams (approximate)
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D1
6
DFN1612-6
G2
5
S2
4
Q1
1
S1
ESD protected
Maximum Ratings N-CHANNEL – Q1
Symbol
VDSS
VGSS
Unit
V
V
Unit
V
V
ID
Value
-20
±8
-600
-430
Symbol
Value
Unit
Pd
500
mW
RθJA
250
°C/W
Tj, TSTG
-65 to +150
°C
ID
Characteristic
Symbol
VDSS
VGSS
TA = 25°C
TA = 85°C
Thermal Characteristics
mA
@TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
mA
@TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
Value
20
±8
750
540
TA = 25°C
TA = 85°C
Drain Current (Note 1)
3
D2
@TA = 25°C unless otherwise specified
Characteristic
Maximum Ratings P-CHANNEL – Q2
2
G1
TOP VIEW
Internal Schematic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Q2
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
1 of 7
www.diodes.com
September 2007
© Diodes Incorporated
DMC2004LPK
Electrical Characteristics N-CHANNEL – Q1
Static Drain-Source On-Resistance
Electrical Characteristics P-CHANNEL – Q2
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
⎯
⎯
⎯
⎯
⎯
⎯
1
±1
V
μA
μA
VGS = 0V, ID = 10μA
VDS = 16V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS(th)
0.5
⎯
1.0
V
0.4
0.5
0.7
0.55
0.70
0.90
Ω
|Yfs|
VSD
⎯
⎯
⎯
200
0.5
⎯
⎯
⎯
1.2
mS
V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
150
25
20
pF
pF
pF
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Condition
VDS = 16V, VGS = 0V
f = 1.0MHz
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
-1.0
± 1.0
V
μA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS(th)
-0.5
⎯
-1.0
V
RDS (ON)
⎯
0.7
1.1
1.7
0.9
1.4
2.0
Ω
|Yfs|
VSD
200
-0.5
⎯
⎯
⎯
-1.2
mS
V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VDS =10V, ID = 0.2A
VGS = 0V, IS = -115mA
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
175
30
20
pF
pF
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
4. Short duration pulse test used to minimize self-heating effect.
ID, DRAIN CURRENT (A)
Q1, N-CHANNEL
ID, DRAIN CURRENT (A)
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
@TA = 25°C unless otherwise specified
0
0
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
2 of 7
www.diodes.com
September 2007
© Diodes Incorporated
DMC2004LPK
VGS(th), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
Q1, N-CHANNEL, continued
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
3 of 7
www.diodes.com
September 2007
© Diodes Incorporated
DMC2004LPK
NEW PRODUCT
Q1, N-CHANNEL, continued
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
ID, DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
Q2, P-CHANNEL
0
0
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 12 Typical Transfer Characteristics
-VGS(th), GATE THRESHOLD VOLTAGE (V)
-VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 11 Typical Output Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 13 Gate Threshold Voltage vs. Ambient Temperature
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 14 Static Drain-Source On-Resistance vs. Drain Current
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September 2007
© Diodes Incorporated
DMC2004LPK
NEW PRODUCT
Q2, P-CHANNEL, continued
10
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 16 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 15 Static Drain-Source On-Resistance vs.
Drain Current
TA, AMBIENT TEMPERATURE (°C)
Fig. 17 Static Drain-Source On-State Resistance
vs. Ambient Temperature
-ID, DRAIN CURRENT (A)
Fig. 19 Forward Transfer Admittance vs. Drain Current
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
5 of 7
www.diodes.com
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Capacitance
September 2007
© Diodes Incorporated
DMC2004LPK
Ordering Information
(Note 5)
Part Number
DMC2004LPK-7
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
NEW PRODUCT
Notes:
Case
DFN1612-6
C1
Date Code Key
Year
Code
2007
U
Month
Code
C1 = Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
2008
V
Jan
1
Feb
2
2009
W
Mar
3
Apr
4
May
5
2010
X
Jun
6
Jul
7
2011
Y
Aug
8
Sep
9
2012
Z
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
G
H
F
Z
R0.
150
L1
K
L2
E
B
N
C
N
D
M
Z
A
DFN1612-6
Dim
Min
Max
Typ
A
1.55 1.68 1.60
B
1.15 1.28 1.20
C
0.20 0.30 0.25
D*
0.15
⎯
⎯
E**
0.20
⎯
⎯
F
0.37
⎯
⎯
G
0.47 0.53 0.50
H
0
0.05 0.02
K*
0.13
⎯
⎯
L
⎯
⎯
⎯
L1**
0.40 0.60 0.50
L2**
0.45 0.65 0.55
M**
0.40
⎯
⎯
N*
0.25
⎯
⎯
Z**
0.10
⎯
⎯
All Dimensions in mm
* Dimensions D, K, N Repeat 4x
** Dimensions E, L1, L2, M, Z Repeat 2x
Suggested Pad Layout
X3
a
X
Y
b
Y2
Y1
X2
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
Dimensions
X
Y
X1
Y1
X2
Y2
X3
a
b
Value (in mm)
0.60
0.65
0.25
0.45
0.175
0.15
0.15
0.10
0.15
X1
6 of 7
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September 2007
© Diodes Incorporated
NEW PRODUCT
DMC2004LPK
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
7 of 7
www.diodes.com
September 2007
© Diodes Incorporated