DMN2215UDM DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 100mΩ @VGS = 4.5V, ID = 2.5A • 140mΩ @VGS = 2.5V, ID = 1.5A • 215mΩ @VGS = 1.8V, ID = 1A Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate to 2kV HBM Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.015 grams (approximate) • • • • • • G1 D1 S2 S1 G2 D2 SOT-26 ESD PROTECTED TO 2kV Maximum Ratings TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = 25°C TA = 85°C Drain Current (Note 1) Pulsed Drain Current ( Note 4) Thermal Characteristics ID IDM Value 20 ±12 2.0 1.4 7.0 Units V V Value 650 192 -55 to +150 Units mW °C/W °C A A @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: TOP VIEW Schematic and Pin Configuration Symbol PD RθJA TJ, TSTG 1. Device mounted on FR-4 PCB, or minimum recommended pad layout 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Pulse width ≤ 10μs, duty cycle ≤ 1%. DMN2215UDM Document number: DS31176 Rev. 4 - 2 1 of 4 www.diodes.com June 2008 © Diodes Incorporated DMN2215UDM NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±10 V μA μA VGS = 0V, ID = 10μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.6 ⎯ 1.0 V Static Drain-Source On-Resistance RDS (ON) ⎯ 80 105 165 100 140 215 mΩ VDS = VCS, ID = 250μA VGS = 4.5V, ID = 2.5A VGS = 2.5V, ID = 1.5A |Yfs| VSD ⎯ ⎯ 5 0.73 ⎯ 1.1 S V VGS = 1.8V, ID = 1.0A VDS =5V, ID = 2.4A VGS = 0V, IS = 1.05A Ciss Coss Crss td(on) tr td(off) tt ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 188 44 30 8 3.8 19.6 8.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF VDS = 10V, VGS = 0V f = 1.0MHz ns VDD = 10V, RL = 10Ω ID = 1A, VGEN = 4.5V, RG = 6Ω IDSS Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Test Condition 5. Short duration pulse test used to minimize self-heating effect. 10 8 7 8 6 5 6 4 4 3 2 2 1 0 0 0 DMN2215UDM Document number: DS31176 Rev. 4 - 2 2 of 4 www.diodes.com 0.5 1 1.5 2 2.5 3 3.5 4 June 2008 © Diodes Incorporated DMN2215UDM 1.8 1.6 RDS(ON) NORMALIZED RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 2.5V ID = 1.5A VGS = 1.8V 0.1 VGS = 2.5V VGS = 4.5V VGS = 4.5V ID = 2.5A 1.4 1.2 VGS = 1.8V ID = 1.0A 1 0.8 0.01 0.01 0.1 1 ID, DRAIN-SOURCE CURRENT Fig. 3 On-Resistance vs. Drain-Source Current & Gate Voltage -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature 1,000 f = 1MHz 0.8 ID = 250µA C, TOTAL CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.6 -50 10 1 0.6 0.4 0.2 Ciss 100 Coss Crss 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Gate Threshold Variation with Temperature 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 20 10 IS, SOURCE CURRENT (A) NEW PRODUCT 1 1 0.1 0.01 0.001 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage DMN2215UDM Document number: DS31176 Rev. 4 - 2 3 of 4 www.diodes.com June 2008 © Diodes Incorporated DMN2215UDM Ordering Information (Note 6) Part Number DMN2215UDM-7 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM NEW PRODUCT Notes: Case SOT-26 22N Date Code Key Year Code Month Code 2007 U 2008 V Jan 1 Feb 2 2009 W Mar 3 22N = Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 2010 X Apr 4 May 5 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C H K M J L D SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C 2.40 E 0.95 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2215UDM Document number: DS31176 Rev. 4 - 2 4 of 4 www.diodes.com June 2008 © Diodes Incorporated