DMC2004DWK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage VGS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 3) • • • • • • • Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 7 Ordering & Date Code Information: See Page 7 Weight: 0.006 grams (approximate) SOT-363 D1 G2 S2 Q2 Q1 ESD protected S1 TOP VIEW G1 D2 TOP VIEW Internal Schematic Maximum Ratings N-CHANNEL – Q1 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V ID 540 390 mA Symbol Value Unit VDSS -20 V VGSS ±8 V ID -430 -310 mA Symbol Value Unit Pd 250 mW RθJA 500 °C/W Tj, TSTG -65 to +150 °C TA = 25°C TA = 85°C Drain Current (Note 1) Maximum Ratings P-CHANNEL – Q2 @TA = 25°C unless otherwise specified Characteristic Drain Source Voltage Gate-Source Voltage TA = 25°C TA = 85°C Drain Current (Note 1) Thermal Characteristics – Total Device Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. @TA = 25°C unless otherwise specified Device mounted on FR-4 PCB. No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMC2004DWK Document number: DS31114 Rev. 4 - 2 1 of 8 www.diodes.com September 2007 © Diodes Incorporated DMC2004DWK Electrical Characteristics N-CHANNEL – Q1 NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Electrical Characteristics P-CHANNEL – Q2 Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 4. Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±1 V μA μA VGS = 0V, ID = 10μA VDS = 16V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V 0.4 0.5 0.7 0.55 0.70 0.90 Ω |Yfs| VSD ⎯ ⎯ ⎯ 200 0.5 ⎯ ⎯ ⎯ 1.2 mS V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 25 20 pF pF pF RDS (ON) Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: @TA = 25°C unless otherwise specified Test Condition VDS = 16V, VGS = 0V f = 1.0MHz @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ± 1.0 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 ⎯ -1.0 V RDS (ON) ⎯ 0.7 1.1 1.7 0.9 1.4 2.0 Ω |Yfs| VSD 200 -0.5 ⎯ ⎯ ⎯ -1.2 mS V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = 0.2A VGS = 0V, IS = -115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 175 30 20 pF pF pF VDS = -16V, VGS = 0V f = 1.0MHz Short duration pulse test used to minimize self-heating effect. DMC2004DWK Document number: DS31114 Rev. 4 - 2 2 of 8 www.diodes.com September 2007 © Diodes Incorporated DMC2004DWK ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0 0 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Q1, N-CHANNEL ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature 10 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMC2004DWK Document number: DS31114 Rev. 4 - 2 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage 3 of 8 www.diodes.com September 2007 © Diodes Incorporated DMC2004DWK NEW PRODUCT Q1, N-CHANNEL, continued TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current DMC2004DWK Document number: DS31114 Rev. 4 - 2 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance 4 of 8 www.diodes.com September 2007 © Diodes Incorporated DMC2004DWK -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 0 0 -VGS, GATE SOURCE VOLTAGE (V) Fig. 12 Typical Transfer Characteristics -VDS, DRAIN SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Q2, P-CHANNEL -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current TA, AMBIENT TEMPERATURE (°C) Fig. 13 Gate Threshold Voltage vs. Ambient Temperature 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 15 Static Drain-Source On-Resistance vs. Drain Current DMC2004DWK Document number: DS31114 Rev. 4 - 2 5 of 8 www.diodes.com -ID, DRAIN-SOURCE CURRENT (A) Fig. 16 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage September 2007 © Diodes Incorporated DMC2004DWK NEW PRODUCT Q2, P-CHANNEL, Continued TA, AMBIENT TEMPERATURE (°C) Fig. 17 Static Drain-Source On-State Resistance vs. Ambient Temperature -ID, DRAIN CURRENT (A) Fig. 19 Forward Transfer Admittance vs. Drain Current DMC2004DWK Document number: DS31114 Rev. 4 - 2 6 of 8 www.diodes.com -VDS, SOURCE-DRAIN VOLTAGE (V) Fig. 18 Reverse Drain Current vs. Source-Drain Voltage -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Capacitance September 2007 © Diodes Incorporated DMC2004DWK Ordering Information (Note 5) Part Number DMC2004DWK-7 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information CAB Date Code Key Year Code 2007 U Month Code Jan 1 YM NEW PRODUCT Notes: Case SOT-363 CAB = Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 2008 V Feb 2 Mar 3 2009 W Apr 4 May 5 2010 X Jun 6 Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D Package Outline Dimensions A B C H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 ⎯ K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 8° 0° α All Dimensions in mm Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 Y X DMC2004DWK Document number: DS31114 Rev. 4 - 2 7 of 8 www.diodes.com September 2007 © Diodes Incorporated NEW PRODUCT DMC2004DWK IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMC2004DWK Document number: DS31114 Rev. 4 - 2 8 of 8 www.diodes.com September 2007 © Diodes Incorporated