SPICE MODEL: BC847BVN BC847BVN Lead-free Green COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Die Construction Two internally isolated NPN/PNP Transistors in one package A B2 C1 KAW YM Lead Free By Design/RoHS Compliant (Note 2) • • • • B C Dim Min Max Typ A 0.15 0.30 0.25 B 1.10 1.25 1.20 C 1.55 1.70 1.60 C2 B1 Mechanical Data • • SOT-563 "Green" Device (Note 3) E1 • • E2 Ultra-Small Surface Mount Package D G Case: SOT-563 D Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 M K Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 H L Terminal Connections: See Diagram E2 B2 C1 Marking (See Page 3): KAW 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.56 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 All Dimensions in mm Ordering & Date Code Information: See Page 4 Q2 Q1 Weight: 0.003 grams (approximate) B1 E1 Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic C2 NPN, BC847B Type (Q1) Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V IC 100 mA Peak Collector Current ICM 200 mA Peak Emitter Current IEM 200 mA Collector Current Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic PNP, BC857B Type (Q2) Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Collector Current Thermal Characteristics Characteristic Power Dissipation (Note 1) @TA = 25oC Total Device Thermal Resistance, Junction to Ambient (Note 1) @TA = 25oC Operating and Storage Temperature Range Notes: Symbol Value Pd 150 Unit mW RθJA 833 °C/W Tj, TSTG -65 to +150 °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30627 Rev. 4 - 2 1 of 4 www.diodes.com BC847BVN Diodes Incorporated Electrical Characteristics NPN, BC847B Type (Q1) @ TA = 25°C unless otherwise specified Characteristic (Note 4) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO 50 — — V IC = 10µA, IB = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6 — — V IE = 1µA, IC = 0 hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage VCE(SAT) — 90 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage VBE(ON) 580 — 660 — 700 720 mV VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA Collector-Cutoff Current ICBO — — — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C Gain Bandwidth Product fT 100 300 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz CCBO — 3.5 6.0 pF VCB = 10V, f = 1.0MHz DC Current Gain Collector-Base Capacitance Note: Test Condition 4. Short duration pulse test used to minimize self-heating effect. 1000 0.5 VCE, COLLECTOR SATURATION VOLTAGE (V) VCE = 5V hFE, DC CURRENT GAIN 100°C TA = 25°C 100 -50°C 10 1 0.01 0.1 1.0 10 IC IB = 20 0.4 0.3 0.2 TA = 100°C 0.1 TA = 25°C TA = -50°C 0 100 0.1 IC, COLLECTOR CURRENT (mA) Fig. 1, DC Current Gain vs Collector Current (BC847B Type) 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector-Emitter Saturation Voltage vs Collector Current (BC847B Type) 16 TA = 25°C f = 1MHz 14 VCE = 10V VCE =5V VCE = 2V 100 CAPACITANCE (pF) fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 1.0 12 10 8 Cibo 6 4 Cobo 2 10 0.1 1.0 10 100 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Fig. 4, Capacitance vs. Reverse Voltage (BC847B Type) IC, COLLECTOR CURRENT (mA) Fig. 3, Gain Bandwidth Product vs Collector Current (BC847B Type) DS30627 Rev. 4 - 2 0 2 of 4 www.diodes.com BC847BVN Electrical Characteristics PNP, BC857B Type (Q2) @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic (Note 5) V(BR)CBO -50 — — V IC = -10µA, IB = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -45 — — V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 — — V IE = -1µA, IC = 0 hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA -300 -650 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA DC Current Gain Test Condition Collector-Emitter Saturation Voltage VCE(SAT) — -75 -250 Base-Emitter Saturation Voltage VBE(SAT) — -700 -850 — -950 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage VBE(ON) -600 — -650 — -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE =- 5.0V, IC = -10mA Collector-Cutoff Current ICBO — — — — -15 -4.0 nA µA VCB = -30V VCB = -30V, TA = 150°C Gain Bandwidth Product fT 100 200 — MHz VCE = -5.0V, IC = -10mA, f = 100MHz CCBO — 3 4.5 pF VCB = -10V, f = 1.0MHz Collector-Base Capacitance 5. Short duration pulse test used to minimize self-heating effect. hFE, DC CURRENT GAIN -1000 -0.5 TA = 150°C -100 VCE = 5V VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) Note: TA = 25°C TA = -50°C -10 IC IB = 10 -0.4 -0.3 TA = 150°C -0.1 -10 -100 TA = -50°C 0 -0.1 -1 -1 TA = 25°C -0.2 -1000 -1000 -100 IC, COLLECTOR CURRENT (mA) Fig. 6, Collector-Emitter Saturation Voltage vs. Collector Current (BC857B Type) IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs. Collector Current (BC857B Type) 20 -1000 VCE = -5V 18 f = 1MHz 16 CAPACITANCE (pF) ft, GAIN BANDWIDTH PRODUCT (MHz) -10 -1 -100 14 12 10 Cibo 8 6 4 Cobo 2 -10 -10 -1 -100 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Fig. 8, Capacitance vs. Reverse Voltage (BC857B Type) IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs Collector Current (BC857B Type) DS30627 Rev. 4 - 2 0 3 of 4 www.diodes.com BC847BVN Pd, TOTAL POWER DISSIPATION (mW) 200 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) Fig. 9, Derating Curve - Total Device Ordering Information Notes: (Note 6) Device Packaging Shipping BC847BVN-7 SOT-563 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KAW = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September KAW YM Date Code Key Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code R S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30627 Rev. 4 - 2 4 of 4 www.diodes.com BC847BVN