DIODES MMBT2222AT

SPICE MODEL: MMBT2222AT
MMBT2222AT
Lead-free
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT2907AT)
A
Ultra-Small Surface Mount Package
C
Lead Free/RoHS Compliant (Note 2)
B
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
·
·
·
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
B C
TOP VIEW
Mechanical Data
·
·
SOT-523
E
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
G
D
¾
¾
0.50
H
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
a
0°
8°
¾
K
M
N
J
L
D
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
C
Marking (See Page 4): 1P
Ordering & Date Code Information, See Page 4
All Dimensions in mm
Weight: 0.002 grams (approximate)
B
Maximum Ratings
Dim
E
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
IC
600
mA
Pd
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
DS30268 Rev. 8 - 2
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MMBT2222AT
ã Diodes Incorporated
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
75
¾
V
IC = 10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10mA, IC = 0
ICEX
¾
10
nA
VCE = 60V, VEB(OFF) = 3.0V
IBL
¾
20
nA
VCE = 60V, VEB(OFF) = 3.0V
hFE
35
50
75
100
40
¾
¾
¾
¾
¾
¾
IC = 100mA, VCE =
IC = 1.0mA, VCE =
IC = 10mA, VCE =
IC = 150mA, VCE =
IC = 500mA, VCE =
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6
¾
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Cobo
¾
8
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—
30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
fT
300
¾
MHz
Input Impedance
hie
0.25
1.25
kW
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Voltage Feedback Ratio
hre
¾
4.0
10-4
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Small-Signal Current Gain
hfe
75
375
¾
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Output Admittance
hoe
25
200
mS
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Noise Figure
NF
¾
4.0
dB
VCE = 10 Vdc, IC = 100 mAdc,
RS = 1.0 k ohms, f = 1.0kHz
Delay Time
td
¾
10
ns
Rise Time
tr
¾
25
ns
Storage Time
ts
¾
225
ns
Fall Time
tf
¾
60
ns
OFF CHARACTERISTICS (Note 3)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
10V
10V
10V
10V
10V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
X
VCE = 20V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Notes:
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
3. Short duration pulse test used to minimize self-heating effect.
1000
250
200
hFE, DC CURRENT GAIN
Pd, POWER DISSIPATION (mW)
(see Note 1)
150
100
TA = 125°C
100
TA = -25°C
TA = +25°C
10
50
VCE = 1.0V
1
0
40
0
80
120
160
200
1
10
1000
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs
Collector Current
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
DS30268 Rev. 8 - 2
0.1
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MMBT2222AT
35
VCE, COLLECTOR-EMITTER VOLTAGE (V)
2.0
f = 1MHz
30
CAPACITANCE (pF)
25
20
15
Cibo
10
Cobo
5
0
0
2
4
6
8
10
12
14
16
18
IC = 30mA
IC = 1mA
IC = 10mA
1.8
1.6
IC = 100mA
1.4
IC = 300mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
20
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance Characteristics
10
1
100
IB, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
1.0
IC
IB = 10
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
TA = -50°C
0
10
1
1000
100
VBE(ON), BASE EMITTER VOLTAGE (V)
0.5
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
0.1
0.01
VCE = 5V
0.9
TA = -50°C
0.8
0.7
TA = 25°C
0.6
0.5
TA = 150°C
0.4
0.3
0.2
IC, COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
fT, GAIN BANDWIDTH PRODUCT (MHz)
1000
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
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MMBT2222AT
Ordering Information
Notes:
(Note 4)
Device
Packaging
Shipping
MMBT2222AT-7-F
SOT-523
3000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
1PYM
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
DS30268 Rev. 8 - 2
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MMBT2222AT