DIODES MMDT2222A_1

SPICE MODEL: MMDT2222A
MMDT2222A
Lead-free
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
SOT-363
Complementary PNP Type Available
(MMDT2907A)
·
·
A
C2
B1
E1
Ultra-Small Surface Mount Package
B C
Lead Free/RoHS Compliant (Note 2)
E2
B2
C1
G
H
Mechanical Data
·
·
Case: SOT-363
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
K
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
M
J
D
C2
B1
F
L
E1
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
·
·
·
·
E2
B2
C1
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0°
8°
All Dimensions in mm
Terminal Connections: See Diagram
Marking (See Page 2): K1P
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
MMDT2222A
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 1)
IC
600
mA
Total Power Dissipation (Note 1)
Pd
200
mW
RqJA
625
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30125 Rev. 9 - 2
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MMDT2222A
ã Diodes Incorporated
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
75
¾
V
IC = 10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10mA, IC = 0
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
OFF CHARACTERISTICS (Note 3)
Collector Cutoff Current
ICBO
¾
10
nA
mA
Collector Cutoff Current
ICEX
¾
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO
¾
10
nA
VEB = 3.0V, IC = 0
IBL
¾
20
nA
VCE = 60V, VEB(OFF) = 3.0V
hFE
35
50
75
100
40
50
35
¾
¾
¾
300
¾
¾
¾
¾
IC = 100mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6
¾
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Cobo
¾
8
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—
25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
VCE = 10V, IC = 100mA,
RS = 1.0kW, f = 1.0kHz
Delay Time
td
¾
10
ns
Rise Time
tr
¾
25
ns
Storage Time
ts
¾
225
ns
Fall Time
tf
¾
60
ns
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Ordering Information (Note 4)
Notes:
Device
Packaging
Shipping
MMDT2222A-7-F
SOT-363
3000/Tape & Reel
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K1P YM
K1P YM
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30125 Rev. 9 - 2
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MMDT2222A
1000
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
200
150
100
TA = 125°C
100
TA = -25°C
TA = +25°C
10
50
VCE = 1.0V
0
1
0
25
50
75
100
125
175
150
200
0.1
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
1000
100
2.0
VCE, COLLECTOR-EMITTER VOLTAGE (V)
30
CT, CAPACITANCE (pF)
10
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs
Collector Current
35
25
20
15
Cibo
10
Cobo
5
0
1
0
2
4
6
8
10
12
14
16
18
20
1.8
1.6
IC = 100mA
1.4
IC = 300mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance Characteristics
DS30125 Rev. 9 - 2
IC = 30mA
IC = 1mA
IC = 10mA
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0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
MMDT2222A
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
IC
IB = 10
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
TA = -50°C
0
10
1
1000
100
VBE(ON), BASE EMITTER VOLTAGE (V)
1.0
0.5
VCE = 5V
0.9
TA = -50°C
0.8
0.7
TA = 25°C
0.6
0.5
TA = 150°C
0.4
0.3
0.2
IC, COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
fT, GAIN BANDWIDTH PRODUCT (MHz)
1000
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30125 Rev. 9 - 2
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MMDT2222A