DIODES ZXMN10B08E6TA

ZXMN10B08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 100V; RDS(ON) = 0.230
ID = 1.9A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT23-6
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN10B08E6TA
7”
8mm
3000 units
ZXMN10B08E6TC
13”
8mm
10000 units
DEVICE MARKING
Top View
• 10B8
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
ZXMN10B08E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
V GS
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed Drain Current (c)
ID
LIMIT
UNIT
100
V
20
V
1.9
1.5
1.6
A
I DM
9
A
IS
I SM
2.5
A
9
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
113
°C/W
Junction to Ambient (b)
R θJA
73
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
2
ZXMN10B08E6
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
3
SEMICONDUCTORS
ZXMN10B08E6
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
100
Zero Gate Voltage Drain Current
I DSS
TYP.
MAX. UNIT CONDITIONS.
STATIC
I GSS
V GS(th)
Static Drain-Source On-State Resistance R DS(on)
(1)
V
Gate-Body Leakage
Gate-Source Threshold Voltage
Forward Transconductance (1)(3)
1.0
0.5
␮A
100
nA
3.0
V
0.230
0.300
0.500
⍀
⍀
g fs
4.8
S
C iss
C oss
497
pF
Output Capacitance
29
pF
Reverse Transfer Capacitance
C rss
18
pF
I D =250␮A, V GS =0V
V DS =100V, V GS =0V
V GS =⫾20V, V DS =0V
I =250␮A, V DS = V GS
D
V GS =10V, I D =1.6A
V GS =4.5V, I D =1.4A
V GS =4.3V, I D =1.1A
V DS =15V,I D =1.6A
DYNAMIC (3)
Input Capacitance
V DS =50 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
2.9
ns
Rise Time
tr
2.1
ns
Turn-Off Delay Time
t d(off)
12.1
ns
Fall Time
tf
5.0
ns
Gate Charge
Qg
5.0
nC
Total Gate Charge
Qg
9.2
nC
Gate-Source Charge
Q gs
1.7
nC
Gate-Drain Charge
Q gd
2.5
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
V DD =50V, I D =1.0A
R G ≅6.0⍀, V GS =10V
V DS =50V,V GS =5V,
I D =1.6A
V DS =50V,V GS =10V,
I D =1.6A
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =2.0A,
V GS =0V
32.0
ns
40.0
nC
T J =25°C, I F =1.7A,
di/dt= 100A/␮s
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
4
ZXMN10B08E6
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
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SEMICONDUCTORS
ZXMN10B08E6
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
6
ZXMN10B08E6
PACKAGE OUTLINE
PAD LAYOUT DETAILS
e
b
L 2
E1
E
DATUM A
a
e1
D
C
A
A2
A1
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
Millimetres
Inches
Millimetres
DIM
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
0.90
1.45
0.35
0.057
E
2.60
3.00
0.102
0.118
A1
0.00
0.15
0
0.006
E1
1.50
1.75
0.059
0.069
A2
0.90
1.30
b
0.35
0.50
0.035
0.051
L
0.10
0.60
0.004
0.002
0.014
0.019
e
0.95 REF
0.037 REF
C
0.09
0.20
0.0035
0.008
e1
1.90 REF
0.074 REF
D
2.80
3.00
0.110
0.118
L
0°
10°
0°
10°
© Zetex Semiconductors plc 2005
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - OCTOBER 2005
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SEMICONDUCTORS