DIODES BAW56-7-F

Transys
Electronics
L I M I T E D
SOT-23 Formed SMD Package
BAW56
SILICON PLANAR EPITAXIAL HIGH–SPEED DIODES
Silicon planar high-speed switching Common Anode
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Marking
BAW56 = A1
Pin configuration
1 = CATHODE
2 = CATHODE
3 = ANODE
1
2
3
ABSOLUTE MAXIMUM RATINGS
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Junction temperature
Forward voltage at IF = 50 mA
Reverse recovery time when switched from
IF = 10 mA to IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA
Recovery charge when switched from
IF = 10 mA to VR = 5 V; RL = 100 Ω
VR
VRRM
IFRM
Tj
VF
max.
max.
max.
max.
<
trr
<
4 ns
Qs
<
45 pC
RATINGS (per diode) (at TA = 25°C unless otherwise specified)
Limiting values
max.
Continuous reverse voltage
VR
Repetitive peak reverse voltage
VRRM max.
75
85
450
150
1,0
V
V
mA
°C
V
75 V
85 V
BAW56
Forward current (d.c.)
Repetitive peak forward current
Non–repetitive peaK forward current
(per crystal}
t = 1 µs
t = 1 ms
t=1s
IF
IFRM
max.
max.
215 mA
450 mA
IFSM
IFSM
IFSM
max.
max.
max.
4 A
1 A
0,5 A
Storage temperature range
Tstg
–55 to +150 °C
Junction temperature
Tj
max.
THERMAL RESISTANCE
From junction to ambient
Rthj–a
=
CHARACTERISTICS (per diode) (at TA = 25°C unless otherwise specified)
Tj = 25 °C unless otherwise specified
Forward voltage
VF
<
IF = 1 mA
VF
<
IF = 10 mA
VF
<
IF = 50 mA
VF
<
IF = 150 mA
Reverse current
IR
<
VR = 25V; Tj = 150 °C
IR
<
VR = 75 V
IR
<
VR = 75V; Tj = 150 °C
Diode capacitance
Cd
<
VR = 0; f = 1 MHz
Forward recovery voltage when switched to
Vfr
<
IF = 10mA; tr = 20ns
150 °C
500 K/W
715
855
1000
1250
mV
mV
mV
mV
30 µA
1,0 µA
50 µA
2,0 pF
1,75 V