Transys Electronics L I M I T E D SOT-23 Formed SMD Package BAW56 SILICON PLANAR EPITAXIAL HIGH–SPEED DIODES Silicon planar high-speed switching Common Anode PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAW56 = A1 Pin configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 1 2 3 ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Junction temperature Forward voltage at IF = 50 mA Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA Recovery charge when switched from IF = 10 mA to VR = 5 V; RL = 100 Ω VR VRRM IFRM Tj VF max. max. max. max. < trr < 4 ns Qs < 45 pC RATINGS (per diode) (at TA = 25°C unless otherwise specified) Limiting values max. Continuous reverse voltage VR Repetitive peak reverse voltage VRRM max. 75 85 450 150 1,0 V V mA °C V 75 V 85 V BAW56 Forward current (d.c.) Repetitive peak forward current Non–repetitive peaK forward current (per crystal} t = 1 µs t = 1 ms t=1s IF IFRM max. max. 215 mA 450 mA IFSM IFSM IFSM max. max. max. 4 A 1 A 0,5 A Storage temperature range Tstg –55 to +150 °C Junction temperature Tj max. THERMAL RESISTANCE From junction to ambient Rthj–a = CHARACTERISTICS (per diode) (at TA = 25°C unless otherwise specified) Tj = 25 °C unless otherwise specified Forward voltage VF < IF = 1 mA VF < IF = 10 mA VF < IF = 50 mA VF < IF = 150 mA Reverse current IR < VR = 25V; Tj = 150 °C IR < VR = 75 V IR < VR = 75V; Tj = 150 °C Diode capacitance Cd < VR = 0; f = 1 MHz Forward recovery voltage when switched to Vfr < IF = 10mA; tr = 20ns 150 °C 500 K/W 715 855 1000 1250 mV mV mV mV 30 µA 1,0 µA 50 µA 2,0 pF 1,75 V