BAW79A...BAW79D Silicon Switching Diodes 1 Switching applications 2 High breakdown voltage 3 Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW79A GE 1 = A1 2 = C1/2 3 = A2 SOT89 BAW79B GF 1 = A1 2 = C1/2 3 = A2 SOT89 BAW79C GG 1 = A1 2 = C1/2 3 = A2 SOT89 BAW79D GH 1 = A1 2 = C1/2 3 = A2 SOT89 Maximum Ratings Parameter Symbol BAW BAW BAW BAW 79A 79B 79C 79D Unit Diode reverse voltage VR 50 100 200 400 V Peak reverse voltage VRM 50 100 200 400 Forward current IF 1 Peak forward current IFM 1 Surge forward current, t = 1 s IFS 10 Total power dissipation, TS = 115 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg A -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 35 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-20-2001 BAW79A...BAW79D Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. DC characteristics V(BR) Breakdown voltage I(BR) = 100 µA V BAW79A 50 - - BAW79B 100 - - BAW79C 200 - - BAW79D 400 - - IF = 1 A - - 1.6 IF = 2 A - - 2 IR - - 1 IR - - 50 CD - 10 - pF trr - 1 - µs VF Forward voltage Reverse current µA VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 20mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph: R = 50, tr = 0.35ns, C 1pF 2 Aug-20-2001 BAW79A...BAW79D Forward current IF = f (TS ) Forward current IF = f (V F) TA = 25°C 10 1 1200 ΙF BAW 79A...D EHB00099 A mA 10 0 IF 800 10 -1 600 400 10 -2 200 0 0 25 50 75 100 °C 10 -3 150 0 1 V TS VF Peak forward current IFM = f (tp ) Reverse current IR = f (TA) TA = 25°C VR = VRmax 10 2 Ι FM BAW 79A...D EHB00100 D = 0.005 0.01 0.02 0.05 0.1 0.2 A 10 1 2 ΙR 10 5 nA BAW 79A...D EHB00101 max 10 4 5 typ 10 3 10 0 5 10 -1 10 2 tp D= T tp 5 T 10-2 10-6 10-5 10-4 10-3 10-2 10 1 10-1 s 100 0 50 100 ˚C 150 TA t 3 Aug-20-2001