ZETEX ZXMN6A11Z

ZXMN6A11Z
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS= 60V; RDS(ON)= 0.140
ID= 3.2A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT89
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT89 package
APPLICATIONS
• DC-DC Converters
• Power Management Functions
• Relay and solenoid driving
• Motor control
ORDERING INFORMATION
DEVICE
ZXMN6A11ZTA
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
7”
12mm
1000 units
DEVICE MARKING
Top View
• 11N6
ISSUE 1 - DECEMBER 2002
1
ZXMN6A11Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
V GS
60
20
V
Continuous Drain Current @ V GS =10V; T A =25°C (b)
@ V GS =10V; T A =70°C (b)
@ V GS =10V; T A =25°C (a)
Pulsed Drain Current (c)
ID
3.2
2.6
2.4
A
I DM
12.3
A
Continuous Source Current (Body Diode) (b)
IS
I SM
5.0
A
12.3
A
Gate Source Voltage
Pulsed Source Current (Body Diode) (c)
LIMIT
UNIT
V
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
2.6
21
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
83.3
°C/W
Junction to Ambient (b)
R θJA
47.4
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t≤10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Refer to
transient Thermal Impedance graph
ISSUE 1 - DECEMBER 2002
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ZXMN6A11Z
CHARACTERISTICS
ISSUE 1 - DECEMBER 2002
3
ZXMN6A11Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
V (BR)DSS
I DSS
60
Zero Gate Voltage Drain Current
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
Forward Transconductance (1)(3)
␮A
100
nA
V
I D =250␮A, V DS = V GS
0.14
0.25
⍀
⍀
V GS =10V, I D =4.4A
V GS =4.5V, I D =3.8A
S
V DS =15V,I D =2.5A
1.0
Static Drain-Source On-State Resistance R DS(on)
(1)
I D =250␮A, V GS =0V
V DS =60V, V GS =0V
V GS =⫾20V, V DS =0V
1.0
g fs
4.9
C iss
C oss
330
pF
Output Capacitance
35
pF
Reverse Transfer Capacitance
C rss
17
pF
DYNAMIC (3)
Input Capacitance
V DS =40 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
tr
1.95
ns
Rise Time
3.5
ns
Turn-Off Delay Time
t d(off)
8.2
ns
Fall Time
tf
4.6
ns
Gate Charge
Qg
3.0
nC
Total Gate Charge
Qg
5.7
nC
Gate-Source Charge
Q gs
1.25
nC
Gate-Drain Charge
Q gd
0.86
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
V DD =30V, I D =2.5A
R G ≅6.0⍀, V GS =10V
V DS = 15V, V GS =5V
I D = 2.5A
V DS =15V, V GS =10V,
I D=2.5A
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =2.8A,
V GS =0V
21.5
ns
20.5
nC
T J =25°C, I F =2.5A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - DECEMBER 2002
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ZXMN6A11Z
TYPICAL CHARACTERISTICS
ISSUE 1 - DECEMBER 2002
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ZXMN6A11Z
TYPICAL CHARACTERISTICS
ISSUE 1 - DECEMBER 2002
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ZXMN6A11Z
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
A
H
C
2.4
K
D B
4.0
G
F
N
1.5
Millimetres
Inches
1.2
DIM
Min
Max
Min
Max
A
4.40
4.60
0.173
0.181
B
3.75
4.25
.150
0.167
C
1.40
1.60
0.550
0.630
D
-
2.60
-
0.102
F
0.28
0.45
0.011
0.018
G
0.38
0.55
0.015
0.022
H
1.50
1.80
0.060
0.072
K
2.60
2.85
0.102
0.112
L
2.90
3.10
0.114
0.112
N
1.4
1.60
0.055
0.063
1.0
3.2
1.2
SOT89 pattern.
© Zetex plc 2002
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ISSUE 1 - DECEMBER 2002
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