DIODES 2N7002T

2N7002T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
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•
•
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Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 3 and 4)
Case: SOT-523
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
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Drain
SOT-523
D
Gate
TOP VIEW
G
S
Source
Equivalent Circuit
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS ≤ 1.0MΩ
Gate-Source Voltage
Drain Current (Note 1)
Thermal Characteristics
Continuous
Pulsed
Continuous
Continuous @ 100°C
Pulsed
Symbol
VDSS
VDGR
VGSS
ID
Value
60
60
±20
±40
115
73
800
Units
V
V
Value
150
833
-55 to +150
Units
mW
°C/W
°C
V
mA
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
TOP VIEW
Symbol
Pd
RθJA
Tj, TSTG
1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
2N7002T
Document number: DS30301 Rev. 11 - 2
1 of 4
www.diodes.com
March 2009
© Diodes Incorporated
2N7002T
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
@ TC = 25°C
@ TC = 125°C
@ Tj = 25°C
@ Tj = 125°C
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
60
⎯
V
VGS = 0V, ID = 10μA
IDSS
⎯
⎯
µA
VDS = 60V, VGS = 0V
IGSS
⎯
⎯
⎯
1.0
500
±10
nA
VGS = ±20V, VDS = 0V
VGS(th)
1.0
⎯
2.0
7.5
13.5
V
RDS (ON)
ID(ON)
gFS
0.5
80
⎯
2.0
4.4
1.0
⎯
⎯
⎯
A
mS
VDS = VGS, ID = 250μA
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
Ciss
Coss
Crss
⎯
⎯
⎯
22
11
2.0
50
25
5.0
pF
pF
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
tD(ON)
tD(OFF)
⎯
⎯
7.0
11
20
20
ns
ns
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Ω
Test Condition
5. Short duration pulse test used to minimize self-heating effect.
1
2.6
VGS = 5V
VGS = 10,7,6V
0.8
VGS = 4V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN-SOURCE CURRENT (A)
0.9
0.7
0.6
0.5
0.4
VGS = 3V
0.3
0.2
0.1
0
1
2
4
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
VGS = 3V
1.8
1.4
VGS = 4V
1
VGS = 5, 6, 7, 10V
0.6
0
5
0.6
0.2
0.4
0.8
1.0
ID, DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
1.2
2.2
RDS(ON), NORMALIZED ON-RESISTANCE (Ω)
VGS(th), NORMALIZED THRESHOLD VOLTAGE
0
2.2
VDS = VGS
ID = 250µA
1.1
1
0.9
0.8
0.7
-50
-25
50
75 100 125 150
0
25
TJ, JUNCTION TEMPERATURE (°C)
Fig. 3 Gate Threshold Variation with Temperature
2N7002T
Document number: DS30301 Rev. 11 - 2
2 of 4
www.diodes.com
VGS = 10V
ID = 500mA
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
75 100 125 150
-25
0
25
50
TJ, JUNCTION TEMPERATURE (°C)
Fig. 4 On-Resistance Variation with Temperature
March 2009
© Diodes Incorporated
2N7002T
60
5.0
4.5
RDS(ON), ON-RESISTANCE (Ω)
C, CAPACITANCE (pF)
50
40
30
Ciss
20
C oss
10
0
5
10
20
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
Ordering Information
3.0
2.5
ID = 50mA
2.0
1.5
1.0
0.0
25
0
10
2
4
8
6
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 6 On-Resistance vs. Gate-Source Voltage
(Note 6)
Part Number
2N7002T-7-F
Notes:
3.5
0.5
Crss
0
4.0
Case
SOT-523
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
72
Date Code Key
Year
Code
Month
Code
2005
S
Jan
1
2006
T
Feb
2
72 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
YM
2007
U
Mar
3
2008
V
Apr
4
May
5
2009
W
Jun
6
Jul
7
2010
X
Aug
8
Sep
9
2011
Y
Oct
O
2012
Z
Nov
N
Dec
D
Package Outline Dimensions
A
B C
G
H
K
J
2N7002T
Document number: DS30301 Rev. 11 - 2
M
N
D
L
SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50
⎯
⎯
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
0°
8°
α
⎯
All Dimensions in mm
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March 2009
© Diodes Incorporated
2N7002T
Suggested Pad Layout
Y
Z
C
X
Dimensions Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
2N7002T
Document number: DS30301 Rev. 11 - 2
4 of 4
www.diodes.com
March 2009
© Diodes Incorporated