BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate S G Source Top View Top View Equivalent Circuit Ordering Information (Note 3) Part Number BSS138-7-F BSS138Q-7-F Notes: Qualification Commercial Automotive Case SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 3. For packaging details, go to our website at http://www.diodes.com. Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 BSS138 Document number: DS30144 Rev. 17 - 2 2000 L C38 2001 M Mar 3 2002 N Apr 4 K = SAT (Shanghai Assembly / Test site) C = CAT (Chengdu Assembly / Test site) 38 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) YM K38 YM Marking Information 2003 P May 5 2004 R … … Jun 6 1 of 5 www.diodes.com 2011 Y Jul 7 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O 2015 C 2016 D Nov N 2017 E Dec D March 2012 © Diodes Incorporated BSS138 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 20KΩ Gate-Source Voltage Continuous Gate-Source Voltage Non repetitive, Pulse width<50μs Drain Current Continuous Pulsed Drain Current (10μs pulse duty cycle = 1%) Symbol VDSS VDGR ID IDM Value 50 50 ±20 ±40 200 1 Units V V V V mA A Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Units mW °C/W °C VGSS Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Typ Max Unit Test Condition BVDSS IDSS IGSS 50 ⎯ ⎯ 75 ⎯ ⎯ ⎯ 0.5 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 50V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) gFS 0.5 ⎯ 100 1.2 1.4 ⎯ 1.5 3.5 ⎯ V Ω mS VDS = VGS, ID = 250μA VGS = 10V, ID = 0.22A VDS = 25V, ID = 0.2A, f = 1.0KHz Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 25 8.0 pF pF pF VDS = 10V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) ⎯ ⎯ ⎯ ⎯ 20 20 ns ns VDD = 30V, ID = 0.2A, RGEN = 50Ω 4. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com. 5. Short duration pulse test used to minimize self-heating effect. 0.6 Tj = 25°C ID, DRAIN-SOURCE CURRENT (A) Min 0.8 VGS = 3.5V 0.5 ID, DRAIN-SOURCE CURRENT (A) Notes: Symbol VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 0 BSS138 Document number: DS30144 Rev. 17 - 2 2 of 5 www.diodes.com 0.7 VDS = 1V -55 °C 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.1 0 0 0.5 1 2.5 1.5 2 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 4 4.5 March 2012 © Diodes Incorporated 2.45 2 2.25 1.8 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (Ω) BSS138 2.05 1.85 VGS = 10V ID = 0.5A 1.65 1.45 1.25 VGS = 4.5V ID = 0.075A 1.05 0.85 1.6 ID = 1.0mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -55 0.65 -55 -25 5 35 65 95 125 155 Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) -5 45 145 95 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On-Resistance vs. Junction Temperature 150°C VGS = 2.5V 7 6 5 25°C 4 3 -55°C 2 1 0 6 VGS = 4.5V 5 150°C 4 3 2 25°C 1 -55°C 0 0.1 BSS138 Document number: DS30144 Rev. 17 - 2 VGS = 2.75V 7 150°C 6 5 4 25°C 3 2 -55°C 1 0 0.1 0.15 0.25 0.2 ID, DRAIN-CURRENT (A) Fig. 6 Drain-Source On-Resistance vs. Drain-Current 0.3 0.5 0.2 0.4 ID, DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current 0 8 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN-CURRENT (A) Fig. 5 Drain-Source On-Resistance vs. Drain-Current 0 9 3 of 5 www.diodes.com 0.05 3.5 VGS = 10V 3 150°C 2.5 2 1.5 25° C 1 -55°C 0.5 0 0.1 0.3 0.5 0.2 0.4 ID, DRAIN-CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain-Current 0 March 2012 © Diodes Incorporated BSS138 1 100 C, CAPACITANCE (pF) ID, DIODE CURRENT (A) VGS = 0V f = 1MHz 0.1 150°C -55°C 0.01 25°C CiSS 10 COSS CrSS 1 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain-Source Voltage Package Outline Dimensions A B C H K M K1 D J F L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X BSS138 Document number: DS30144 Rev. 17 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com March 2012 © Diodes Incorporated BSS138 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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