DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PROD UCT • • • • • • • Mechanical Data • • Low On-Resistance • 29mΩ @VGS = 4.5V • 50mΩ @VGS = 2.5V • 100mΩ @VGS = 2.0V Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 6) Qualified to AEC-Q101 Standards for High Reliability • • • • • • SOT-23 Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) Drain D Gate Source TOP VIEW Maximum Ratings Equivalent Circuit S G TOP VIEW @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4) Symbol VDSS VGSS ID IDM Value 20 ±12 5.9 21 Units V V A A Symbol PD RθJA TJ, TSTG Value 1.4 90 -55 to +150 Units W °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, on 2oz Copper pad layout with RθJA = 90°C/W. 2. No purposefully added lead. Halogen and Antimony Free. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Repetitive rating, pulse width limited by junction temperature. DMN2050L Document number: DS31502 Rev. 3 - 2 1 of 5 www.diodes.com October 2008 © Diodes Incorporated DMN2050L Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.45 ⎯ 1.4 V 29 50 100 mΩ VDS = VGS, ID = 250μA VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 3.1A VGS = 2.0V, ID = 1.5A VDS =5V, ID = 2.1A VGS = 0V, IS = 2.0A Static Drain-Source On-Resistance RDS (ON) ⎯ 24 42 68 Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge |Yfs| VSD ⎯ ⎯ 8 0.9 ⎯ 1.4 S V Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 532 144 117 1.3 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Qg Qgs Qgd ⎯ ⎯ ⎯ 6.7 0.8 3.0 ⎯ ⎯ ⎯ nC Notes: Test Condition VDS = 10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 10V, VGS = 4.5V, ID = 5.0A VDS = 10V, VGS = 4.5V, ID = 5.0A VDS = 10V, VGS = 4.5V, ID = 5.0A 5. Short duration pulse test used to minimize self-heating effect. 6. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. 20 20 VGS = 10V 16 VDS = 5V VGS = 3.0V 16 VGS = 2.5V ID, DRAIN CURRENT (A) VGS = 4.5V ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics 12 12 VGS = 2.0V 8 8 4 4 TA = 150°C TA = 125°C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN2050L Document number: DS31502 Rev. 3 - 2 5 2 of 5 www.diodes.com TA = 85°C T A = 25°C T A = -55°C VGS = 1.5V 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 October 2008 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 0.08 0.07 0.06 0.05 VGS = 2.5V 0.04 VGS = 4.5V 0.03 0.02 VGS = 10V 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V TA = 150°C 0.04 TA = 125°C T A = 85°C T A = 25°C TA = -55°C 0.02 0 0 4 8 12 16 ID, DRAIN CURRENT (A) 20 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 VGS = 10V ID = 10A 1.4 VGS = 4.5V ID = 5A 1.2 1.0 0.8 0.6 -50 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.06 20 1.6 1.4 1.2 ID = 1mA 1.0 0.8 ID = 250µA 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 1,000 20 T A = 25°C C iss C, CAPACITANCE (pF) 16 IS, SOURCE CURRENT (A) NEW PRODUCT DMN2050L 12 8 Coss Crss 100 4 10 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current DMN2050L Document number: DS31502 Rev. 3 - 2 3 of 5 www.diodes.com 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Total Capacitance 20 October 2008 © Diodes Incorporated DMN2050L NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA (t) = r(t) * RθJA RθJA = 88°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 9 Transient Thermal Response Ordering Information (Note 7) Part Number DMN2050L-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code 2008 V Month Code 2009 W Jan 1 Feb 2 MN3 = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) YM MN3 2010 X Mar 3 Apr 4 2011 Y May 5 Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C H K M K1 D J F G DMN2050L Document number: DS31502 Rev. 3 - 2 L 4 of 5 www.diodes.com SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm October 2008 © Diodes Incorporated DMN2050L Suggested Pad Layout Y NEW PRODUCT Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2050L Document number: DS31502 Rev. 3 - 2 5 of 5 www.diodes.com October 2008 © Diodes Incorporated