DIODES DMN66D0LT-7

DMN66D0LT
N-CHANNEL ENHANCEMENT MODE MOSFET
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NEW PROD UCT
Features
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Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-523
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
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Drain
SOT-523
D
Gate
Gate
Protection
Diode
ESD PROTECTED, 1KV
Maximum Ratings
TOP VIEW
TOP VIEW
EQUIVALENT CIRCUIT
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage (Note 1)
Drain Current (Note 1)
Thermal Characteristics
Symbol
VDSS
VGSS
Continuous
Continuous
Continuous @ 100°C
Pulsed
ID
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Value
60
±20
115
73
800
Units
V
V
Value
200
625
-55 to +150
Units
mW
°C/W
°C
mA
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
S
G
Source
Symbol
PD
RθJA
TJ, TSTG
@TA = 25°C unless otherwise specified
@ TC = 25°C
@ TC = 125°C
@ TJ = 25°C
@ TJ = 125°C
Symbol
Min
Typ
Max
Unit
BVDSS
60
70
V
VGS = 0V, ID = 10μA
IDSS
⎯
⎯
µA
VDS = 60V, VGS = 0V
IGSS
⎯
⎯
⎯
1.0
500
±5
μA
VGS = ±20V, VDS = 0V
VGS(th)
1.2
⎯
2.0
6
5
V
RDS (ON)
⎯
3.5
3.0
gFS
80
⎯
⎯
mS
VDS = VGS, ID = 250μA
VGS = 5.0V, ID = 0.115A
VGS = 10V, ID = 0.115A
VDS = 10V, ID = 0.115A
Ciss
Coss
Crss
⎯
⎯
⎯
23
3.4
1.4
⎯
⎯
⎯
pF
pF
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
tD(ON)
tD(OFF)
⎯
⎯
10
33
⎯
⎯
ns
ns
VDD = 30V, ID = 0.115A, RL = 150Ω,
VGEN = 10V, RGEN = 25Ω
Ω
Test Condition
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
DMN66D0LT
Document number: DS31530 Rev. 2 - 2
1 of 4
www.diodes.com
September 2008
© Diodes Incorporated
DMN66D0LT
0.6
1
VDS = 5V
Pulsed
ID, DRAIN CURRENT (A)
0.5
NEW PRODUCT
0.4
0.3
0.2
0.1
TA = 150°C
0.1
T A = 85°C
TA = 25°C
TA = -55°C
0
0.01
1
2
3
4
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
2.5
9
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
8
2.0
7
6
1.5
5
1.0
VGS = 5V
4
3
VGS = 10V
0.5
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
100
1.9
1.8
ID = 250µA
CT, CAPACITANCE (pF)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
2.0
1.7
1.6
1.5
1.4
1.3
Ciss
10
Coss
1.2
1.1
1
1.0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
DMN66D0LT
Document number: DS31530 Rev. 2 - 2
2 of 4
www.diodes.com
Crss
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
40
September 2008
© Diodes Incorporated
DMN66D0LT
IS, SOURCE CURRENT (A)
0.1
TA = 150°C
T A = 125°C
0.01
TA = 85°C
0.001
TA = 25°C
TA = -55°C
0.0001
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
Ordering Information
(Note 4)
Part Number
DMN66D0LT-7
Notes:
Case
SOT-523
Packaging
3000/Tape & Reel
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
NEW PRODUCT
1
MN1
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
2010
X
Mar
3
Apr
4
MN1 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: V = 2008
M = Month ex: 9 = September
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
Package Outline Dimensions
A
B C
G
H
K
J
DMN66D0LT
Document number: DS31530 Rev. 2 - 2
M
N
D
L
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SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
0.80
B
0.75
0.85
1.60
C
1.45
1.75
0.50
D
⎯
⎯
1.00
G
0.90
1.10
H
1.50
1.70
1.60
J
0.00
0.10
0.05
0.75
K
0.60
0.80
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
0°
8°
α
⎯
All Dimensions in mm
September 2008
© Diodes Incorporated
DMN66D0LT
Suggested Pad Layout
Y
NEW PRODUCT
Z
C
X
Dimensions Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN66D0LT
Document number: DS31530 Rev. 2 - 2
4 of 4
www.diodes.com
September 2008
© Diodes Incorporated