DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1KV (HBM) Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) • • • • • • • SOT-363 D2 G1 S1 S2 G2 D1 ESD PROTECTED, 1KV TOP VIEW Internal Schematic TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage (Note 1) Drain Current (Note 1) Thermal Characteristics Symbol VDSS VGSS Continuous Continuous Continuous @ 100°C Pulsed ID Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: Units V V Value 250 1.6 500 -55 to +150 Units mW mW/°C °C/W °C mA @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation Derating above TA = 25°C (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Value 60 ±20 115 73 800 Symbol PD RθJA Tj, TSTG @TA = 25°C unless otherwise specified @ TC = 25°C @ TC = 125°C @ Tj = 25°C @ Tj = 125°C Symbol Min Typ Max Unit BVDSS 60 70 V VGS = 0V, ID = 10μA IDSS ⎯ ⎯ µA VDS = 60V, VGS = 0V IGSS ⎯ ⎯ ⎯ 1.0 500 ±5 μA VGS = ±20V, VDS = 0V VGS(th) 1.2 ⎯ 2.0 6 5 V RDS (ON) ⎯ 3.5 3.0 gFS 80 ⎯ ⎯ mS VDS = VGS, ID = 250μA VGS = 5.0V, ID = 0.115A VGS = 10V, ID = 0.115A VDS = 10V, ID = 0.115A Ciss Coss Crss ⎯ ⎯ ⎯ 23 3.4 1.4 ⎯ ⎯ ⎯ pF pF pF VDS = 25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) ⎯ ⎯ 10 33 ⎯ ⎯ ns ns VDD = 30V, ID = 0.115A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω Ω Test Condition 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Short duration pulse test used to minimize self-heating effect. DMN66D0LDW Document number: DS31232 Rev. 4 - 2 1 of 4 www.diodes.com February 2008 © Diodes Incorporated DMN66D0LDW 0.6 1 VDS = 5V Pulsed ID, DRAIN CURRENT (A) 0.5 NEW PRODUCT 0.4 0.3 0.2 0.1 TA = 150°C 0.1 T A = 85°C TA = 25°C T A = -55°C 0 0.01 1 2 3 4 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 2.5 9 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 8 2.0 7 6 1.5 5 1.0 VGS = 5V 4 3 VGS = 10V 0.5 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 100 1.9 1.8 ID = 250µA CT, CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 1.7 1.6 1.5 1.4 1.3 Ciss 10 Coss 1.2 1.1 1 1.0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature DMN66D0LDW Document number: DS31232 Rev. 4 - 2 2 of 4 www.diodes.com Crss 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 40 February 2008 © Diodes Incorporated DMN66D0LDW IS, SOURCE CURRENT (A) 0.1 TA = 150°C T A = 125°C 0.01 TA = 85°C 0.001 TA = 25°C TA = -55°C 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 4) Part Number DMN66D0LDW-7 Notes: Case SOT-363 Packaging 3000/Tape & Reel 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MN1 YM Date Code Key Year Code 2007 U Month Code Jan 1 YM MN1 NEW PRODUCT 1 MN1 = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 2008 V Feb 2 Mar 3 2009 W Apr 4 May 5 2010 X Jun 6 Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 ⎯ K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° α All Dimensions in mm B C H K J M D DMN66D0LDW Document number: DS31232 Rev. 4 - 2 F L 3 of 4 www.diodes.com February 2008 © Diodes Incorporated DMN66D0LDW Suggested Pad Layout NEW PRODUCT E Z E C G Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN66D0LDW Document number: DS31232 Rev. 4 - 2 4 of 4 www.diodes.com February 2008 © Diodes Incorporated