SPICE MODEL: MMBT3904T Pb MMBT3904T Lead-free NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · SOT-523 Epitaxial Planar Die Construction Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ¾ ¾ 0.50 G G 0.90 1.10 1.00 H H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0° 8° ¾ A Complementary PNP Type Available (MMBT3906T) Ultra-Small Surface Mount Package C Lead Free/RoHS Compliant (Note 2) B C TOP VIEW Mechanical Data · · · · · · · · · E B Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K M N Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 J L D Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). C Terminal Connections: See Diagram Marking (See Page 2): 1N All Dimensions in mm Ordering & Date Code Information, See Page 2 B Weight: 0.002 grams (approximate) Maximum Ratings E @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 200 mA Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30270 Rev. 7 - 2 1 of 4 www.diodes.com MMBT3904T ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V IC = 10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 10mA, IC = 0 ICEX ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V IBL ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 ¾ ¾ 300 ¾ ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base- Emitter Saturation Voltage VBE(SAT) 0.65 ¾ 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo ¾ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kW Voltage Feedback Ratio hre 0.5 8.0 x 10-4 Small Signal Current Gain hfe 100 400 ¾ Output Admittance hoe 1.0 40 mS Current Gain-Bandwidth Product fT 300 ¾ MHz Noise Figure NF ¾ 5.0 dB Delay Time td ¾ 35 ns Rise Time tr ¾ 35 ns VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA Storage Time ts ¾ 200 ns VCC = 3.0V, IC = 10mA Fall Time tf ¾ 50 ns IB1 = IB2 = 1.0mA OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0Vdc, IC = 100mAdc, RS = 1.0KW, f = 1.0MHz SWITCHING CHARACTERISTICS Ordering Information (Note 4) Notes: Device Packaging Shipping MMBT3904T-7-F SOT-523 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 1N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 1NYM Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code N P R S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30270 Rev. 7 - 2 2 of 4 www.diodes.com MMBT3904T 250 15 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) (see Note 1) 200 150 100 50 10 5 Cibo Cobo 0 0.1 0 0 100 200 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 1000 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1 TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1000 0.1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE IC IB = 10 1 TA = -25°C TA = 125°C TA = 25°C 0.1 0.1 1 TA = 75°C 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30270 Rev. 7 - 2 3 of 4 www.diodes.com MMBT3904T IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30270 Rev. 7 - 2 4 of 4 www.diodes.com MMBT3904T